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Silicon carbide’s strength, thermal conductivity, and stability in extreme environments make it a useful material for electronics and MEMS.
- Typical Film Thickness: 0.3 µm
- Batch Size: 25
- Deposition Rate: 6 – 9 nm/min. (60 – 90 Å/min.)
- Deposition Gases: Methylsilane, Dichlorosilane, Hydrogen, Acetylene, Ammonia
- Deposition Temperature: 700 – 900 °C
- Residual Stress: 200 – 1400 MPa
Some common precursors include:
- SiH4 + C2H4
- SiH2Cl2 + C2H2
- 1,3-Disilabutane
- Methylsilane
NH3 is commonly used for n-type doping while (CH3)3Al is used for p-type. The recipes using organosilicon precursors can be done at lower temperatures. 1,3-disilabutane, however, has several disadvantages: it is expensive, liquid, and relatively low-purity. Its purity also degrades over time, leading to excessive run to run variation. The methylsilane process is thus recommended. Some process relationships are:
- Increasing pressure in the range 0.17 – 1.7 Torr increases film stress and decreases growth rate.
- Around 800 °C, film stress reaches a minimum and the growth rate reaches a maximum.
- Stress reaches a minimum with the replacement of 9% of the methylsilane with dichlorosilane.
Applications: high-temperature and chemically-resistant MEMS, high-power and high-voltage devices, resonators, passivation.
