Tystar Equipment: MINI SERIES | STANDARD SERIES | NANO SEREIS | SOLAR SERIES | Photo-Enhanced CVD | Tystar Instruments: GAS CONTROL| MASS FLOW TESTER | FLOW CALIBRATOR
Low stress nitride is performed at a high ratio of DCS to NH3 flow rates (typically ~ 6). The consequence of such silicon-enriched deposition is a very low tensile stress. The stress depends mainly on the gas mixing ratio and the process temperature. The processing pressure is typically a few Torr or lower. Increasing the pressure and the temperature increases the deposition but sacrifices the uniformity.
Applications: MEMS structures, diffusion barriers, passivation layers, oxidation masks, etch masks, ion implant masks, insulation, encapsulation, mechanical protection, gate dielectrics, optical waveguides, CMP and etch stop layers.
- Typical film thickness: 0.1 – 2 µm
- Refractive index at 550 nm / 2.0 – 2.3
- Batch Size: 50
- Deposition rate: 3 – 4.5 nm/min
- Gases: dichlorosilane, ammonia
- Uniformity: < 5%
- Stress: 50 – 300 MPa
- Deposition Temperature: 800 – 840 °C Flat
