Description
2″ Si Wafers (2 inch Si wafers)
Note: Surface – P = Polished, E = Etched, C = AsCut, Ox = Oxide (on that layer); Material – CZ unless noted
Note: Items sold in quantities of 25, unless noted. Please email us to check the availability , price and lead time etc.
Item | Material | Orient. | Diam | Thck | Surf. | Resistivity | Comment |
(mm) | (μm) | Ωcm | |||||
1 | P/B | [100] | 2″ | 280um | P/E | 0-100 ohm-cm | Test Grade with flat |
2 | N/Ph | [100] | 2″ | 280um | P/E | 0-100 ohm-cm | Test Grade with flat |
3 | P/B | [100] | 2″ | 280um | P/E | 1-10 ohm-cm | Prime Grade with Flat |
4 | N/Ph | [100] | 2″ | 280um | P/E | 1-10 ohm-cm | Prime Grade with Flat |
5 | P/B | [100] | 2″ | 280um | P/E | 0.001-0.005 ohm-cm | Prime Grade with Flat |
6 | P/B | [111] | 2″ | 280um | P/E | 1-10 ohm-cm | Prime Grade with Flat |
7 | P/B | [111] | 2″ | 280um | P/E | 0.001-0.005 ohm-cm | Prime Grade with Flat |
8 | N/As | [100] | 2″ | 280um | P/E | 0.001-0.005 ohm-cm | Test Grade with flat |
9 | P/B | [100] | 2″ | 280um | P/E | 1-20 ohm-cm | Test Grade with flat |
10 | Undoped | [100] | 2″ | 280um | P/P | >10,000 ohm-cm | Prime Grade |
11 | p-type Si:B | [100] | 2″ | 500 | P/P | FZ 6,000–10,000 | SEMI Prime, 2Flats, hard cst |
12 | p-type Si:B | [100] | 2″ | 300 ±15 | P/P | FZ 3,000–4,000 | SEMI Test (Bad back–side, with scratches & edge chips, 1Flat, hard cst, TTV<7μm |
13 | p-type Si:B | [100] | 2″ | 400 | P/P | FZ 3,000–4,000 | 2Flats (180 ° from the Primary), hard cst |
14 | p-type Si:B | [100] | 2″ | 1,600 | P/E | FZ >3,000 | SEMI Prime, 2Flats, Empak cst |
15 | p-type Si:B | [100] | 2″ | 300 ±10 | P/E | FZ 2,800–3,300 | SEMI Prime, 1Flat, hard cst, TTV<7μm |
16 | p-type Si:B | [100] | 2″ | 300 | P/E | FZ 2,800–3,300 | SEMI Prime, 1Flat, hard cst, TTV<7μm |
17 | p-type Si:B | [100] | 2″ | 300 ±10 | P/E | FZ 2,800–3,300 | SEMI Prime, 1Flat, hard cst, TTV<7μm |
18 | p-type Si:B | [100] | 2″ | 280 | P/E | FZ >1,000 | SEMI Prime, 2Flats, hard cst |
19 | p-type Si:B | [100] | 2″ | 280 | P/P | FZ >100 | SEMI, 2Flats, in hard cassettes of 3 and 12 wafers |
20 | p-type Si:B | [100] | 2″ | 275 | P/P | FZ 1–10 | SEMI Prime, 1Flat, hard cst |
21 | p-type Si:B | [111] ±0.5° | 2″ | 500 | P/P | FZ 5,000–6,500 | SEMI Test (in unsealed cassette), 1Flat |
22 | p-type Si:B | [111] ±0.5° | 2″ | 275 | P/E | FZ 3,000–5,000 {3,500–5,600} | SEMI Prime, 1Flat, Lifetime>2,000μs, in hard cassettes of 5 wafers |
23 | p-type Si:B | [111] ±0.5° | 2″ | 275 | P/E | FZ 3,000–5,000 | SEMI Prime, 1Flat, Lifetime>2,000μs, in hard cassettes of 5 wafers |
24 | p-type Si:B | [111–7° towards[110]] ±0.5° | 2″ | 279 | P/P | FZ >2,000 | SEMI Prime, 1Flat, hard cst |
25 | p-type Si:B | [111] ±0.5° | 2″ | 331 | P/E | FZ 2,000–5,000 | SEMI, Soft cst |
26 | p-type Si:B | [111] ±0.5° | 2″ | 331 | P/E | FZ 2,000–5,000 | SEMI TEST (Scratched), Soft cst |
27 | p-type Si:B | [111] ±0.5° | 2″ | 331 | P/E | FZ 2,000–5,000 | SEMI Prime, in Soft cassettes of 4 wafers |
28 | p-type Si:B | [111] | 2″ | 381 | P/E | FZ 2,000–5,000 | SEMI TEST (Wafers scratched and cannot be recleaned), hard cst |
29 | p-type Si:B | [111] ±0.5° | 2″ | 280 ±15 | P/E | FZ >1,000 | SEMI, 2Flats, hard cst |
30 | p-type Si:B | [111] ±0.5° | 2″ | 275 | P/P | FZ 1–10 | SEMI Prime, 1Flat, hard cst |
31 | n-type Si:P | [110] ±1° | 2″ | 525 | P/E | FZ 5,000–10,000 | SEMI Prime, Lifetime>1,000μs, Primary Flat @ [111]±0.5°, Secondary Flat @ [111] 70.5° CW from Primary, in hard cassettes of 7, 8 & 8 wafers |
32 | n-type Si:P | [110] ±1° | 2″ | 525 | P/E | FZ 5,000–10,000 | SEMI Prime, Lifetime>1,000μs, Primary Flat @ [111]±0.5°, Secondary @ [111] 70.5° CW from Primary |
33 | n-type Si:P | [110] ±0.5° | 2″ | 400 | P/E | FZ 4,000–20,000 | SEMI, 1Flat, hard cst, Lifetime>1,000μs |
34 | n-type Si:P | [110] | 2″ | 900 | P/E | FZ 130–350 | SEMI Prime, 1Flat, hard cst |
35 | n-type Si:P | [110] ±0.5° | 2″ | 900 | P/E | FZ 50–100 | SEMI Prime, hard cst, Primary Flat only at [111]±0.5° |
36 | n-type Si:P | [100] | 2″ | 300 | P/E | FZ 5,000–8,000 | SEMI Prime, 2Flats, hard cst |
37 | n-type Si:P | [100] | 2″ | 430 | P/E | FZ >5,000 | Prime, hard cst, TTV<5μm |
38 | n-type Si:P | [100] | 2″ | 325 | P/P | FZ >3,000 | SEMI Prime, 2Flats, hard cst |
39 | n-type Si:P | [100] | 2″ | 325 | P/P | FZ >3,000 | SEMI Prime, 2Flats, hard cst |
40 | n-type Si:P | [100] | 2″ | 325 | P/E | FZ >3,000 | SEMI Prime, 2Flats |
41 | n-type Si:P | [100] | 2″ | 300 | P/E | FZ >600 | SEMI Prime, 2Flats, hard cst |
42 | n-type Si:P | [100] | 2″ | 300 | P/E | FZ >600 {1,400–2,000} | SEMI Prime, 2Flats, hard cst |
43 | n-type Si:P | [100] | 2″ | 200 | P/P | FZ 500–1,000 | SEMI, 2Flats, in hard ccassettes of 4, 5 & 5 wafers |
44 | n-type Si:P | [100] | 2″ | 500 | P/P | FZ >200 | SEMI Prime, 2Flats, hard cst |
45 | n-type Si:P | [100] | 2″ | 225 | P/P | FZ >100 | SEMI, 2Flats, Individual cst, 1 very deep scratch |
46 | n-type Si:P | [100] | 2″ | 280 | P/E | FZ 60–90 | SEMI Prime, 1Flat, hard cst |
47 | n-type Si:P | [100] | 2″ | 300 | P/P | FZ 0.9–10.0 | SEMI, 2Flats, hard cst |
48 | n-type Si:P | [111–3.5° towards[110]] ±0.5° | 2″ | 279 ±15 | P/E | FZ >2,000 | SEMI Prime, 1Flat, hard cst |
49 | n-type Si:P | [111] ±0.5° | 2″ | 280 | P/P | FZ 2,000–4,000 | SEMI Prime, 1Flat, hard cst, TTV<5μm, Both–sides Epi–Ready |
50 | n-type Si:P | [111] ±0.5° | 2″ | 280 | P/P | FZ 2,000–4,000 | SEMI Prime, 1Flat, hard cst, TTV<5μm |
51 | n-type Si:P | [111] ±0.5° | 2″ | 280 | P/P | FZ 2,000–4,000 | SEMI Prime, 1Flat, hard cst |
52 | n-type Si:P | [111] ±0.5° | 2″ | 300 | P/P | FZ 2,000–4,000 | SEMI Prime, 2Flats, hard cst |
53 | n-type Si:P | [111] ±0.5° | 2″ | 500 | P/P | FZ 650–1,000 {660–900} | SEMI, 2Flats, in hard cassettes of 8 wafers |
54 | n-type Si:P | [111] ±0.5° | 2″ | 500 | P/P | FZ 300–1,000 | SEMI Prime, 2Flats, hard cst |
55 | n-type Si:P | [111] ±0.5° | 2″ | 500 | P/P | FZ 10–55 | SEMI Prime, 2Flats, hard cst |
56 | Intrinsic Si:- | [110] ±0.5° | 2″ | 275 | P/E | FZ >20,000 | SEMI Prime, 1Flat, hard cst |
57 | Intrinsic Si:- | [110] ±0.5° | 2″ | 275 | P/E | FZ >20,000 | SEMI Prime, 1Flat, hard cst |
58 | Intrinsic Si:- | [100] | 2″ | 280 | P/P | FZ >20,000 | SEMI Prime, 1Flat, hard cst |
59 | Intrinsic Si:- | [100] | 2″ | 280 | P/E | FZ >20,000 | SEMI Prime, 1Flat, hard cst |
60 | Intrinsic Si:- | [100] | 2″ | 280 | P/E | FZ >20,000 | SEMI Prime, 1Flat, hard cst, 5 Prime wafers, 8 wafers with up to 2 scratches each |
61 | Intrinsic Si:- | [100] | 2″ | 200 | P/P | FZ >10,000 | SEMI Prime, 1Flat, hard cst |
62 | Intrinsic Si:- | [100] | 2″ | 280 ±10 | P/P | FZ >10,000 | SEMI Prime, 2Flats, hard cst, TTV<2μm, Bow<15μm, Warp<20μm |
63 | Intrinsic Si:- | [100] | 2″ | 280 ±10 | P/P | FZ >10,000 | SEMI Prime, 2Flats, hard cst, TTV<3μm, Bow<10μm, Warp<10μm |
64 | Intrinsic Si:- | [100] | 2″ | 500 | P/P | FZ >10,000 | SEMI Prime, 1Flat, hard cst |
65 | Intrinsic Si:- | [100] | 2″ | 500 | P/E | FZ >10,000 | SEMI Prime, 2Flats, in hard cassettes of 7, 8 & 8 wafers |
66 | Intrinsic Si:- | [100] | 2″ | 280 ±10 | P/E | FZ >8,500 | SEMI Prime, 1Flat, TTV<5μm, hard cst |
67 | Intrinsic Si:- | [100] | 2″ | 300 | P/E | FZ 5,000–10,000 | SEMI Prime, 1Flat, hard cst |
68 | Intrinsic Si:- | [100] | 2″ | 300 | P/E | FZ 5,000–10,000 | SEMI Prime, 1Flat, in hard cassettes of 2 & 5 wafers |
69 | Intrinsic Si:- | [100] | 2″ | 300 | P/E | FZ 5,000–8,000 | SEMI Prime, 2Flats, hard cst |
70 | Intrinsic Si:- | [111] ±0.5° | 2″ | 300 | P/E | FZ 15,000–20,000 | SEMI Prime, 2Flats, TTV<5μm, Bow/Warp<25μm, hard cst |
71 | Intrinsic Si:- | [113] ±0.5° | 2″ | 300 | P/P | FZ >10,000 | SEMI Prime, 1Flat, hard cst |
72 | p-type Si:B | [110] ±0.5° | 2″ | 300 | P/E | 5–10 | SEMI Prime, 1Flat 16mm @ <1,–1,0>±1°, hard cst. |
73 | p-type Si:B | [110] ±0.5° | 2″ | 300 | P/E | 5–10 | SEMI Prime, 1Flat 16mm @ <1,–1,0>±1°, hard cst |
74 | p-type Si:B | [110–1° towards[111A]] ±0.5° | 2″ | 254 | P/E | 0.05–0.07 | SEMI Prime, 2Flats, hard cst, TTV<5μm |
75 | p-type Si:B | [100] | 2″ | 300 | P/P | 10–20 | SEMI Prime, 2Flats, hard cst |
76 | p-type Si:B | [100] | 2″ | 300 | P/E | 5–10 | SEMI, 1Flat, in hard cassettes of 1, 2, 3 & 3 wafers |
77 | p-type Si:B | [100] | 2″ | 300 | P/E | 5–10 | SEMI Prime, 1Flat, hard cst |
78 | p-type Si:B | [100] | 2″ | 500 | P/E | 5–10 | SEMI Prime, 2Flats, hard cst |
79 | p-type Si:B | [100] | 2″ | 250 | P/P | 1–5 | SEMI Prime, 1Flat, hard cst |
80 | p-type Si:B | [100] | 40mm | 250 | P/E | 1–100 | SEMI Prime, 1Flat, Soft cst |
81 | p-type Si:B | [100] | 2″ | 275 | P/E | 1–10 | SEMI, 1Flat, hard cst |
82 | p-type Si:B | [100] | 2″ | 280 | P/P | 1–5 | SEMI Prime, 2Flats, hard cst |
83 | p-type Si:B | [100–6°] | 2″ | 300 | P/E | 1–5 | SEMI Prime, 2Flats, hard cst |
84 | p-type Si:Ga | [100] | 2″ | 350 | P/P | 1–5 | SEMI Prime, 2Flats, hard cst |
85 | p-type Si:Ga | [100] | 2″ | 350 | P/P | 1–5 | SEMI Prime, 2Flats, hard cst |
86 | p-type Si:B | [100] | 2″ | 380 | P/E | 1–100 | SEMI Prime, 2Flats, hard cst |
87 | p-type Si:B | [100] | 2″ | 775 | P/P | 1–30 {9.0–11.9} | SEMI Prime, 2Flats, hard cst |
88 | p-type Si:B | [100] | 2″ | 275 | P/E | 0.5–1.0 | SEMI, 1Flat, hard cst |
89 | p-type Si:B | [100] | 2″ | 3,150 | C/C | >0.5 | 1Flat |
90 | p-type Si:B | [100] | 2″ | 280 | P/P | 0.4–0.6 | SEMI Prime, 2Flats, hard cst |
91 | p-type Si:B | [100] | 2″ | 275 | P/E | 0.2–0.4 | SEMI Prime, 2Flats, hard cst |
92 | p-type Si:B | [100] | 2″ | 279 | P/P | 0.08–0.12 | SEMI Prime, 1Flat, hard cst |
93 | p-type Si:B | [100] | 2″ | 250 | P/P | 0.01–0.02 | SEMI Prime, 2Flats, hard cst, TTV<5μm |
94 | p-type Si:B | [100] | 2″ | 300 | P/E | 0.01–0.02 | SEMI, 2Flats, hard cst |
95 | p-type Si:B | [100] | 2″ | 600 | P/E | 0.01–0.05 | SEMI Prime, 2Flats, hard cst |
96 | p-type Si:B | [100] ±1° | 2″ | 1,000 | P/E | 0.01–100.00 | SEMI Prime, 2Flats, hard cst |
97 | p-type Si:B | [100] | 2″ | 300 | P/E | 0.001–0.005 | SEMI Prime, 2Flats, hard cst |
98 | p-type Si:B | [100] | 2″ | 300 | P/E | 0.001–0.005 | SEMI Prime, 2Flats, hard cst |
99 | p-type Si:B | [100] | 2″ | 300 | P/E | 0.001–0.005 | SEMI Test, 2Flats, hard cst contaminated by broken wafer, needs cleaning |
100 | p-type Si:B | [100] | 2″ | P/E | SEMI Prime, hard cst | ||
101 | p-type Si:B | [100] | 2″ | 420 | P/P | <0.005 | SEMI, 1 Flat, hard cst, Striation rings visible |
102 | p-type Si:B | [100] | 2″ | 525 | P/P | <0.01 {0.0076–0.0078} | SEMI Prime, 2Flats, in hard cassettes of 5 wafers. |
103 | p-type Si:B | [111] ±0.5° | 2″ | 330 | P/E | 1–20 | SEMI Prime, 1Flat, hard cst |
104 | p-type Si:B | [111] ±0.5° | 2″ | 330 | P/E | 1–20 | SEMI Prime, 1Flat, hard cst |
105 | p-type Si:B | [111] ±0.5° | 2″ | 330 | P/E | 1–20 | SEMI Prime, 1Flat, hard cst |
106 | p-type Si:B | [111] ±0.5° | 2″ | 425 | P/P | 1–4 {2.8–3.1} | SEMI Test, 1Flat, hard cst, Dirty, can be recleaned and polished for additional fee |
107 | p-type Si:B | [111] ±0.5° | 2″ | 430 | P/E | 1–10 | SEMI Prime, 1Flat, hard cst |
108 | p-type Si:B | [111] ±0.5° | 2″ | 500 | P/E | 1–4 | SEMI, 1Flat |
109 | p-type Si:B | [111–10° towards[112]] | 2″ | 280 | P/E | 0.5–0.6 | SEMI Prime, 1Flat, hard cst |
110 | p-type Si:B | [111] ±0.5° | 2″ | 275 | P/P | 0.1–0.3 | SEMI Prime, 1Flat, hard cst |
111 | p-type Si:B | [111] ±0.5° | 2″ | 280 | P/E | 0.1–1.0 | SEMI Prime, 1Flat, hard cst |
112 | p-type Si:B | [111] ±0.5° | 2″ | 500 | P/P | 0.1–0.3 | SEMI Prime, 1Flat, hard cst |
113 | p-type Si:B | [111] ±0.5° | 2″ | 280 | P/E | 0.003–0.005 | SEMI, 1Flat, hard cst |
114 | p-type Si:B | [111] | 2″ | 500 | P/P | 0.003–0.005 | Prime, 2 Flats (2nd @ 45°), hard cst |
115 | p-type Si:B | [111] | 2″ | 280 | P/E | 0.001–0.005 | SEMI Prime, 1Flat, hard cst |
116 | p-type Si:B | [111] | 2″ | 1,000 | P/E | 0.001–0.005 | SEMI Prime, 1Flat, hard cst |
117 | p-type Si:B | [111] ±0.5° | 2″ | 500 | P/P | <0.01 | SEMI Prime, hard cst |
118 | p-type Si:Ga | Poly. | 2″ | C/C | 0.024–0.036 | Gallium doped Concentrate (each with measured Gallium content) | |
119 | n-type Si:P | [110] ±0.5° | 2″ | 254 | P/E | 1.2–1.6 | SEMI Prime, 2Flats, hard cst, TTV<5μm |
120 | n-type Si:P | [110] ±0.5° | 2″ | 300 | BROKEN | 1–10 | Broken P/E wafers, Primary Flat @ [111]±1.0°, Secondary @ [111] 70.5° CW from Primary |
121 | n-type Si:P | [100] | 50mm | 280 | P/E | 130–280 | SEMI Prime, 2Flats, hard cst |
122 | n-type Si:P | [100] | 50mm | 280 | P/E | 130–280 | SEMI TEST (2 scratched, 2 with pits, 2Flats, hard cst |
123 | n-type Si:P | [100] | 2″ | 275 | P/P | 40–100 | SEMI Prime, 2Flats, hard cst |
124 | n-type Si:P | [100] | 2″ | 300 | P/P | 33–48 | SEMI TEST — Some wafers have scratches, 2Flats, hard cst |
125 | n-type Si:P | [100] | 2″ | 150 | P/P | 20–40 | SEMI Prime, 2Flats, hard cst |
126 | n-type Si:P | [100] | 2″ | 300 | P/P | 10–30 | SEMI Prime, 1Flat, hard cst |
127 | n-type Si:P | [100] | 2″ | 300 | P/P | 10–30 | SEMI, 1Flat, hard cst |
128 | n-type Si:P | [100] | 2″ | 300 | P/P | 10–30 | SEMI, 1Flat, hard cst |
129 | n-type Si:P | [100] | 2″ | 500 | P/P | 5–10 | SEMI Prime, 2Flats, hard cst |
130 | n-type Si:P | [100] | 2″ | 500 | P/P | 5–10 {6.0–6.5} | SEMI Prime, 2Flats, hard cst |
131 | n-type Si:P | [100] | 2″ | 280 | P/E | 3–9 | SEMI Test, 1Flat, hard cst, Broken wafer removed from cassette |
132 | n-type Si:P | [100] | 2″ | 280 | P/P | 1–5 | SEMI Prime, 2Flats, hard cst |
133 | n-type Si:P | [100] | 2″ | 280 | P/E | 1–10 | SEMI Prime, 1Flat, hard cst |
134 | n-type Si:P | [100] | 2″ | 350 | P/P | 1–50 | Test, Polished but dirty and scratched. Can be re–polished for additional fee, NO Flats, hard cst |
135 | n-type Si:P | [100] ±1° | 2″ | 400 ±15 | P/P | 1–10 | SEMI Prime, 1Flat, TTV<3μm, Empak cst |
136 | n-type Si:P | [100] | 2″ | 3,000 | P/E | 1–50 | SEMI, 1Flat, Individual cst |
137 | n-type Si:P | [100] | 2″ | 5,000 | P/E | 1–100 | SEMI Prime, 2Flats, Individual cst, In groups of 8 wafers |
138 | n-type Si:P | [100] ±1.0° | 2″ | 6,000 | P/E | 1–10 | SEMI Prime, 2Flats, Individual cst |
139 | n-type Si:P | [100] | 2″ | 300 | P/P | 0.8–1.0 | SEMI Prime, 2Flats, hard cst |
140 | n-type Si:Sb | [100] | 2″ | 300 | P/E | 0.01–0.02 | SEMI Prime, 2Flats, hard cst |
141 | n-type Si:Sb | [100] | 2″ | 500 | P/P | 0.01–0.02 | SEMI Prime, 2Flats, in hard cassettes of 5 wafers |
142 | n-type Si:As | [100] | 2″ | 7,050 | P/E | 0.0031–0.0038 | SEMI Prime, 2Flats, Individual cst Group of 2 wafers |
143 | n-type Si:As | [100] | 2″ | 300 | P/E | 0.003–0.004 | SEMI Prime, 2Flats, hard cst |
144 | n-type Si:As | [100] | 2″ | 200 ±10 | P/P | 0.001–0.005 | SEMI Prime, 2Flats, hard cst |
145 | n-type Si:As | [100] | 2″ | 300 | P/P | 0.001–0.005 | SEMI Prime, 2Flats, hard cst |
146 | n-type Si:As | [100] | 2″ | 300 | P/P | 0.001–0.005 | SEMI Prime, 2Flats, hard cst |
147 | n-type Si:As | [100] | 2″ | 300 | P/E | 0.001–0.005 {0.0033–0.0037} | SEMI, 2Flats, in hard cassettes of 7 wafers |
148 | n-type Si:As | [100] | 2″ | 300 | P/E | 0.001–0.005 | SEMI Prime, 2Flats, hard cst |
149 | n-type Si:As | [100] | 2″ | 300 | P/E | 0.001–0.005 | SEMI Prime, 2Flats, hard cst |
150 | n-type Si:As | [100] | 2″ | 420 ±15 | P/P | 0.001–0.005 {0.0030–0.0034} | SEMI Prime, 2Flats, in Empak Cassettes of 3 & 5 wafers |
151 | n-type Si:P | [111] | 2″ | 400 | L/L | 120–170 | Lapped & edged |
152 | n-type Si:P | [111] ±0.5° | 2″ | 10,000 | P/E | 40–49 | Prime, NO Flats, Individual cst |
153 | n-type Si:P | [111] ±0.5° | 2″ | 5,000 | P/E | >20 | Prime, NO Flats, Individual cst |
154 | n-type Si:P | [111] | 2″ | 5,000 | P/E | 15–20 | SEMI Prime, 1Flat, Individual cst |
155 | n-type Si:P | [111] | 2″ | 300 | P/E | 10–25 | SEMI Prime, 2Flats, hard cst |
156 | n-type Si:P | [111] ±0.5° | 2″ | 500 | P/E | 10–12 | SEMI Prime, 2Flats, hard cst |
157 | n-type Si:P | [111–3°] ±0.5° | 2″ | 600 | P/E | ~10 | SEMI Prime, 1Flat, TTV<3μm, hard cst |
158 | n-type Si:P | [111] ±0.5° | 2″ | 275 | P/E | 4–7 | SEMI Prime, 2Flats, hard cst |
159 | n-type Si:P | [111] ±0.5° | 2″ | 500 | P/P | 2.8–10.0 | SEMI Prime, hard cst |
160 | n-type Si:P | [111] | 2″ | 500 | P/E | 2.2–3.8 | SEMI Prime, 2Flats, hard cst |
161 | n-type Si:P | [111] ±0.5° | 2″ | 300 | P/E | 1–10 | SEMI Prime, 2Flats, hard cst |
162 | n-type Si:P | [111] ±0.5° | 2″ | 300 | P/E | 1–3 | SEMI Prime, 2Flats, hard cst |
163 | n-type Si:P | [111] ±0.5° | 2″ | 6,000 | P/E | 1–10 | SEMI Prime, 1Flat, Individual cst |
164 | n-type Si:Sb | [111] ±0.5° | 2″ | 300 | P/E | 0.05–0.09 | SEMI Prime, 2Flats, hard cst |
165 | n-type Si:Sb | [111–3.5°] ±0.5° | 2″ | 300 | P/E | 0.05–0.09 | SEMI Prime, 2Flats, in hard cassettes of 5 & 8 wafers |
166 | n-type Si:Sb | [111] | 2″ | 2,900 | P/P | 0.013–0.015 | Prime, NO Flats, Individual cst |
167 | n-type Si:Sb | [111–2.5°] ±0.5° | 2″ | 280 | P/E | 0.012–0.017 | SEMI, 2Flats, hard cst |
168 | n-type Si:Sb | [111] ±0.5° | 2″ | 280 | P/P | 0.011–0.020 | SEMI, 2Flats, hard cst |
169 | n-type Si:As | [111] ±0.5° | 2″ | 300 | P/E | 0.002–0.005 | SEMI Prime, 2Flats, hard cst |
170 | p-type Si:B | [100] | 2″ | 300 | OxP/EOx | 0.001–0.005 | SEMI TEST, 2Flats, NOTE: Thermal Oxide 150nm thick on both sides, uniformity poorer than ±5%, hard cst |
171 | n-type Si:P | [111] | 2″ | 300 | P/E | NTDFZ 7–8 | SEMI Prime, 2Flats, hard cst |
172 | p-type Si:B | [110] | 2″ | 300 | P/E | FZ 800–2,000 | 1 F @ <1,–1,0> |
173 | p-type Si:B | [110] | 2″ | 350 | P/P | FZ 200–300 | 1 F @ <1,–1,0> |
174 | p-type Si:B | [110] | 2″ | 380 | P/P | FZ 130–160 | 1 F @ <111> only |
175 | p-type Si:B | [110] | 2″ | 280 | P/E | FZ 120–300 | 1 F @ <111> only |
176 | p-type Si:B | [100] | 2″ | 300 | P/P | FZ 400–1,000 | Prime, NO Flats, hard cst |
177 | p-type Si:B | [100] | 2″ | 300 | P/E | FZ >50 | SEMI Prime, 2Flats, hard cst |
178 | p-type Si:B | [111] | 2″ | 300 | P/E | FZ 730–1,050 | SEMI Prime, 1Flat, hard cst |
179 | p-type Si:B | [111] | 50mm | 300 | P/E | FZ 500–900 | SEMI Prime, 1Flat, hard cst |
180 | p-type Si:B | [111] | 2″ | 300 | P/P | FZ >60 | SEMI Prime, 2Flats, hard cst |
181 | p-type Si:B | [111] | 2″ | 300 | P/E | FZ 36–100 | SEMI Prime, 1Flat, hard cst |
182 | n-type Si:P | [110] | 2″ | 250 | P/E | FZ ~50 | PF<111> SF 134° |
183 | n-type Si:P | [110] | 2″ | 900 | P/E | FZ 50–100 | 1 F @ <111> only |
184 | n-type Si:P | [110] | 2″ | 280 | P/E | FZ 19–33 | 1 F @ <1,–1,0> |
185 | n-type Si:P | [110] | 2″ | 280 | P/P | FZ 16–30 | 1 F @ <111> only |
186 | n-type Si:P | [110] | 2″ | 1,000 | P/P | FZ 15–18 | 1 F @ <1,–1,0> |
187 | n-type Si:P | [100] | 2″ | 300 | P/P | FZ 600–1,200 | SEMI Prime, 2Flats, hard cst |
188 | n-type Si:P | [100] | 2″ | 2,000 | P/E | FZ >600 | SEMI Prime, 2Flats, Individual cst |
189 | n-type Si:P | [100] | 2″ | 200 | P/P | FZ 500–1,500 | SEMI Prime, 2Flats, hard cst |
190 | n-type Si:P | [100] | 2″ | 300 | P/E | FZ >300 | SEMI Prime, 2Flats, hard cst |
191 | n-type Si:P | [100] | 2″ | 500 | P/P | FZ >200 | SEMI Prime, 2Flats, hard cst |
192 | n-type Si:P | [100] | 2″ | 150 | P/P | FZ 50–110 | SEMI Prime, 2Flats, hard cst |
193 | n-type Si:P | [100] | 2″ | 300 | P/P | FZ 50–110 | SEMI Prime, 2Flats, hard cst |
194 | n-type Si:P | [100] | 2″ | 280 | P/P | FZ 20–70 | SEMI Prime, 2Flats, hard cst |
195 | n-type Si:P | [100] | 2″ | 300 | P/E | FZ 10–40 | SEMI Prime, 1Flat, hard cst |
196 | n-type Si:P | [100] | 2″ | 300 | P/P | FZ 0.5–1.0 | SEMI, 1Flat, hard cst; TWO flats at 90° |
197 | n-type Si:As | [100] | 2″ | 7,000 | P/E | FZ 0.001–0.005 | SEMI Prime, 2Flats, Individual cst |
198 | n-type Si:P | [111] | 2″ | 275 | P/E | FZ 1,500–5,000 | SEMI Prime, 2Flats, hard cst |
199 | n-type Si:P | [111] | 2″ | 500 | P/P | FZ 650–1,000 | SEMI Prime, 2Flats, hard cst |
200 | n-type Si:P | [111] | 50mm | 1,000 | P/E | FZ >600 | SEMI Prime, 1Flat, hard cst |
201 | n-type Si:P | [111] | 2″ | 500 | P/P | FZ 500–3,000 | SEMI Prime, 2Flats, hard cst |
202 | n-type Si:P | [111] | 2″ | 280 | P/P | FZ 300–400 | SEMI Prime, 1Flat, hard cst |
203 | n-type Si:P | [111] | 2″ | 2,000 | P/P | FZ 168–250 | Prime, NO Flats, Individual cst |
204 | n-type Si:P | [111] | 2″ | 300 | P/P | FZ >150 | SEMI Prime, 2Flats, hard cst |
205 | n-type Si:P | [111] | 2″ | 500 | P/P | FZ 130–150 | SEMI Prime, 2Flats, hard cst |
206 | n-type Si:P | [111] | 2″ | 300 | P/P | FZ 125–210 | SEMI Prime, 2Flats, hard cst |
207 | n-type Si:P | [111] | 2″ | 380 | P/E | FZ 100–300 | SEMI Prime, 2Flats, hard cst |
208 | n-type Si:P | [111] | 2″ | 450 | P/P | FZ 100–230 | Prime, NO Flats, hard cst |
209 | n-type Si:P | [111] | 2″ | 300 | P/P | FZ 70–95 | SEMI Prime, 2Flats, hard cst |
210 | n-type Si:P | [111–1°] | 2″ | 300 | P/E | FZ 69–77 | SEMI Prime, 1Flat, hard cst |
211 | n-type Si:P | [111] | 2″ | 300 | P/P | FZ >60 | SEMI Prime, 1Flat, hard cst |
212 | n-type Si:P | [111] | 2″ | 300 | P/E | FZ 60–90 | SEMI Prime, 2Flats, hard cst |
213 | n-type Si:P | [111] | 2″ | 280 | P/E/P | FZ 40–50 | SEMI Prime, 2Flats, hard cst |
214 | n-type Si:P | [111] | 2″ | 300 | P/P | FZ 15–30 | SEMI Prime, 2Flats, hard cst |
215 | n-type Si:P | [111] | 2″ | 500 | P/P | FZ 10–55 | SEMI Prime, 2Flats, hard cst |
216 | n-type Si:P | [111] ±0.5° | 2″ | 300 | P/E | FZ NTD 7–8 | SEMI, 2Flats, hard cst |
217 | p-type Si:B | [110] | 2″ | 2,000 | P/P | 1–10 | 1 F @ <1,–1,0> |
218 | p-type Si:B | [100] | 2″ | 500 | P/P | 1,300–2,600 | SEMI Prime, 2Flats, hard cst |
219 | p-type Si:B | [100] | 2″ | 300 | P/P | ~150 | SEMI Prime, 1Flat, hard cst |
220 | p-type Si:B | [100] | 2″ | 300 | P/P | 90–120 | SEMI Prime, 2Flats, hard cst |
221 | p-type Si:B | [100] | 2″ | 300 | P/P | 70–80 | SEMI Prime, 1Flat, hard cst |
222 | p-type Si:B | [100] | 2″ | 300 | P/P | 6–7 | Prime, NO Flats, hard cst |
223 | p-type Si:B | [100] | 2″ | 1,400 | P/P | 6–8 | Prime, NO Flats, hard cst |
224 | p-type Si:B | [100] | 2″ | 1,500 | P/P | 6–8 | Prime, NO Flats, hard cst |
225 | p-type Si:B | [100] | 2″ | 3,000 | P/E | 6–8 | Prime, NO Flats, Individual cst |
226 | p-type Si:B | [100] | 2″ | 3,000 | P/E | 4.9–5.3 | Prime, NO Flats, Individual cst |
227 | p-type Si:B | [100] | 2″ | 300 | P/E | 1–10 | SEMI Prime, 2Flats, hard cst |
228 | p-type Si:Ga | [100] | 2″ | 350 | P/P | 1–5 | SEMI Prime, 2Flats, hard cst |
229 | p-type Si:B | [100] | 2″ | 500 | P/E | 1–2 | SEMI Prime, 2Flats, hard cst |
230 | p-type Si:B | [100] | 2″ | 1,000 | P/P | 1–10 | SEMI Prime, 1Flat, hard cst |
231 | p-type Si:B | [100] | 2″ | 2,000 | P/P | 1–10 | SEMI Prime, 2Flats, Individual cst |
232 | p-type Si:B | [100] | 2″ | 2,000 | P/E | 1–10 | SEMI Prime, 1Flat, Individual cst |
233 | p-type Si:B | [100] | 2″ | 2,800 | P/E | 1–10 | SEMI Prime, 2Flats, Individual cst |
234 | p-type Si:B | [100] | 2″ | 3,000 | P/E | 1–10 | SEMI Prime, 1Flat, Individual cst |
235 | p-type Si:B | [100] | 2″ | 280 | P/E | 0.5–0.6 | Prime, NO Flats, hard cst |
236 | p-type Si:B | [100] | 2″ | 280 | P/E | 0.08–0.10 | SEMI Prime, 1Flat, hard cst |
237 | p-type Si:B | [100] | 2″ | 1,000 | P/E | 0.073–0.090 | SEMI Prime, 2Flats, hard cst |
238 | p-type Si:B | [100] | 2″ | 250 | P/P | 0.02–0.04 | SEMI Prime, 1Flat, hard cst |
239 | p-type Si:B | [100] | 2″ | 300 | P/E | 0.016–0.017 | Prime, NO Flats, hard cst |
240 | p-type Si:B | [100] | 2″ | 1,000 | P/P | 0.015–0.045 | SEMI Prime, 2Flats, hard cst |
241 | p-type Si:B | [100] | 2″ | 280 | P/P | 0.008–0.095 | SEMI Prime, 1Flat, hard cst |
242 | p-type Si:B | [100–4°] | 2″ | 300 | P/P | 0.003–0.004 | SEMI Prime, 2Flats, hard cst |
243 | p-type Si:B | [100–6° towards[110]] | 2″ | 300 | P/E | 0.0026–0.0029 | SEMI Prime, 1Flat, hard cst |
244 | p-type Si:B | [100] | 2″ | 300 | P/E | 0.0023–0.0029 | SEMI Prime, 1Flat, hard cst |
245 | p-type Si:B | [100] | 2″ | 250 | P/P | 0.001–0.006 | SEMI Prime, 2Flats, hard cst |
246 | p-type Si:B | [100–6° towards[110]] | 2″ | 275 | P/E | 0.001–0.005 | SEMI Prime, 2Flats, hard cst |
247 | p-type Si:B | [100] | 2″ | 280 | P/E | 0.001–0.005 | SEMI Prime, 2Flats, hard cst |
248 | p-type Si:B | [100] | 2″ | 300 | P/E | 0.001–0.005 | Prime, NO Flats, hard cst |
249 | p-type Si:B | [100] | 2″ | 500 | P/P | 0.001–0.005 | SEMI Prime, 2Flats, hard cst |
250 | p-type Si:B | [111–10° towards[112]] | 2″ | 300 | P/E | 20–25 | SEMI Prime, 1Flat, hard cst |
251 | p-type Si:B | [111] | 2″ | 380 | P/P | 10–20 | SEMI Prime, 1Flat, hard cst |
252 | p-type Si:B | [111–2° towards[112]] | 2″ | 1,000 | P/P | 10–30 | SEMI Prime, 1Flat, hard cst |
253 | p-type Si:B | [111] | 2″ | 300 | P/P | 7–10 | SEMI Prime, 1Flat, hard cst |
254 | p-type Si:B | [111] | 2″ | 500 | P/P | 2.4–2.6 | SEMI Prime, 1Flat, hard cst |
255 | p-type Si:B | [111] | 2″ | 300 | P/P | 2–3 | SEMI Prime, 1Flat, hard cst |
256 | p-type Si:B | [111] | 2″ | 500 | P/E | 2–3 | SEMI Prime, 1Flat, hard cst |
257 | p-type Si:B | [111] | 2″ | 280 | P/E/P | 1–20 | SEMI Prime, 1Flat, hard cst |
258 | p-type Si:B | [111–1.5°] | 2″ | 400 | P/E | 1–10 | SEMI Prime, 1Flat, hard cst |
259 | p-type Si:B | [111] | 2″ | 500 | P/E | 1–10 | SEMI Prime, 2Flats, hard cst |
260 | p-type Si:B | [111–10° towards[112]] | 2″ | 280 | P/E | 0.5–0.6 | SEMI Prime, 1Flat, hard cst |
261 | p-type Si:B | [111–3°] | 2″ | 300 | P/P | 0.016–0.018 | SEMI Prime, 1Flat, hard cst |
262 | p-type Si:B | [111–3.5°] | 2″ | 280 | P/P | 0.01–0.02 | SEMI Prime, 1Flat, hard cst |
263 | p-type Si:B | [111] | 2″ | 600 | P/E | 0.01–0.05 | SEMI Prime, 1Flat, hard cst |
264 | p-type Si:B | [111–6° towards[110]] | 2″ | 275 | P/E | 0.001–0.005 | SEMI Prime, 1Flat, hard cst |
265 | p-type Si:B | [111] | 2″ | 280 | P/E | 0.001–0.005 | SEMI Prime, 1Flat, hard cst |
266 | n-type Si:P | [110] | 2″ | 1,000 | P/P | ~4 | NO Flats |
267 | n-type Si:P | [110] | 2″ | 950 | P/P | 2.5–3.5 | 1 F @ <1,–1,0> |
268 | n-type Si:P | [110] | 2″ | 450 | P/P | ~0.6 | 1 F @ <001> |
269 | n-type Si:P | [100] | 2″ | 400 | P/P | 210–880 | SEMI Prime, 2Flats, hard cst |
270 | n-type Si:P | [100] | 2″ | 300 | P/E | >50 | SEMI Prime, 2Flats, hard cst |
271 | n-type Si:P | [100] | 2″ | 5,000 | P/E | 42–53 | SEMI Prime, 2Flats, Individual cst |
272 | n-type Si:P | [100] | 2″ | 2,300 | P/E/P | 30–40 | Prime, NO Flats, Individual cst |
273 | n-type Si:P | [100] | 2″ | 5,000 | P/E | 30–70 | Prime, NO Flats, Individual cst |
274 | n-type Si:P | [100] | 2″ | 300 | P/P | 25–42 | SEMI Prime, 1Flat, hard cst |
275 | n-type Si:P | [100] | 2″ | 425 | P/E/P | 20–40 | Prime, NO Flats, hard cst |
276 | n-type Si:P | [100] | 2″ | 300 | P/P | 12–24 | SEMI Prime, 2Flats, hard cst |
277 | n-type Si:P | [100] | 2″ | 5,000 | P/E | 10–30 | SEMI Prime, 2Flats, Individual cst |
278 | n-type Si:P | [100] | 2″ | 5,000 | P/E | 3.4–3.7 | SEMI Prime, 2Flats, Individual cst |
279 | n-type Si:P | [100] | 2″ | 40 ±10 | P/P | 1–3 | SEMI Prime, 1Flat, TTV<5μm, in single wafer trays between clean–room sheets, MOQ 5 wafers |
280 | Si:P | [100–6°] | 2″ | 300 | P/E | 1–5 | SEMI Prime, 2Flats, hard cst |
281 | n-type Si:P | [100] | 2″ | 1,000 | P/P | 1–10 | SEMI Prime, 1Flat, hard cst |
282 | n-type Si:Sb | [100] | 2″ | 280 | P/E | 0.01–0.02 | SEMI Prime, 2Flats, hard cst |
283 | n-type Si:Sb | [100] | 2″ | 1,000 | P/E | 0.005–0.020 | SEMI Prime, 2Flats, hard cst |
284 | n-type Si:As | [100] | 2″ | 300 | P/P | 0.001–0.005 | SEMI Prime, 2Flats, hard cst |
285 | n-type Si:As | [100] | 2″ | 500 | P/E | 0.001–0.005 | SEMI Prime, 1Flat, hard cst |
286 | n-type Si:P | [111] | 2″ | 5,000 | P/E | 50–80 | Prime, NO Flats, Individual cst |
287 | n-type Si:P | [111] | 2″ | 10,000 | P/E | 46–52 | SEMI Prime, 2Flats, Individual cst |
288 | n-type Si:P | [111] | 2″ | 10,000 | P/E | 46–52 | SEMI Prime, 2Flats, Individual cst |
289 | n-type Si:P | [111] | 2″ | 10,000 | P/E | 40–52 | SEMI Prime, 1Flat, Individual cst |
290 | n-type Si:P | [111] | 2″ | 5,000 | P/E | 35–50 | SEMI Prime, 2Flats, Individual cst |
291 | n-type Si:P | [111] | 2″ | 250 | P/E | 25–35 | Prime, NO Flats, hard cst |
292 | n-type Si:P | [111] | 2″ | 300 | P/P | 23–33 | SEMI Prime, 1Flat, hard cst |
293 | n-type Si:P | [111] | 2″ | 700 | P/E | 22–28 | SEMI Prime, 2Flats, hard cst |
294 | n-type Si:P | [111] | 2″ | 5,000 | P/P | 20–40 | SEMI Prime, 1Flat, Individual cst |
295 | n-type Si:P | [111] | 2″ | 10,000 | P/E | >20 | SEMI Prime, 1Flat, Individual cst |
296 | n-type Si:P | [111] | 2″ | 6,000 | P/E | 11–14 | SEMI Prime, 1Flat, Individual cst |
297 | n-type Si:P | [111] | 2″ | 300 | P/E | 10–25 | SEMI Prime, 2Flats, hard cst |
298 | n-type Si:P | [111–5°] | 2″ | 600 | P/E | ~10 | SEMI Prime, 2Flats, hard cst |
299 | n-type Si:P | [111] | 2″ | 450 | P/P | 6–10 | SEMI Prime, 2Flats, hard cst |
300 | n-type Si:P | [111] | 2″ | 500 | P/E | 5.5–6.9 | Prime, NO Flats, hard cst |
301 | n-type Si:P | [111–4° towards[112]] | 2″ | 500 | P/E | 5–10 | SEMI Prime, 2Flats, hard cst |
302 | n-type Si:P | [111] | 2″ | 330 | P/E | 3–7 | SEMI Prime, 1Flat, hard cst |
303 | n-type Si:P | [111] | 2″ | 275 | P/P | 2.5–3.5 | SEMI Prime, 1Flat, hard cst |
304 | n-type Si:P | [111] | 2″ | 5,000 | P/E | 2.0–3.1 | Prime, NO Flats, Individual cst |
305 | n-type Si:P | [111] | 2″ | 5,000 | P/E | 2–3 | Prime, NO Flats, Individual cst |
306 | n-type Si:P | [111] | 2″ | 275 | P/P | 1.5–1.7 | SEMI Prime, 2Flats, hard cst |
307 | n-type Si:P | [111–8°] | 2″ | 280 | P/E | 1.3–1.8 | SEMI Prime, 2Flats, hard cst |
308 | n-type Si:P | [111–3.5°] | 2″ | 280 | P/E | 1–30 | SEMI Prime, 2Flats, hard cst |
309 | n-type Si:P | [111] | 2″ | 500 | P/E | 1–10 | SEMI Prime, 2Flats, hard cst |
310 | n-type Si:P | [111–2.5°] | 2″ | 500 | C/C | 1–20 | SEMI Prime, 1Flat, hard cst |
311 | n-type Si:P | [111] | 2″ | 7,500 | P/E | 1–10 | SEMI Prime, 2Flats, Individual cst |
312 | n-type Si:Sb | [111–1° towards[112]] | 2″ | 500 | P/E | 0.017–0.026 | SEMI Prime, 2Flats, hard cst |
313 | n-type Si:Sb | [111–2°] | 2″ | 200 | P/E | ~0.01 | SEMI Prime, 2Flats, hard cst |
314 | n-type Si:Sb | [111] | 2″ | 280 | P/E | 0.01–0.02 | SEMI Prime, 2Flats, hard cst |
315 | n-type Si:Sb | [111–2°] | 2″ | 280 | P/E | 0.008–0.020 | SEMI Prime, 2Flats, hard cst |
316 | n-type Si:As | [111] | 2″ | 300 | P/E | 0.0030–0.0034 | SEMI Prime, 2Flats, hard cst |
317 | n-type Si:As | [111] | 2″ | 300 | P/E | 0.001–0.005 | SEMI Prime, 2Flats, hard cst |
318 | n-type Si:As | [111–4°] | 2″ | 350 | P/E | 0.001–0.005 | SEMI Prime, 2Flats, hard cst |