Description
STE RTP150 Rapid Thermal Processing System SemiTEq JSC
Condition: Used. We sell it at AS IS,WHERE IS.
Description for your reference only.
System for high-temperature treatment of semiconductor wafers in controlled gas, vacuum, oxidizingor deoxidizing atmosphere
Special design of aluminum chamber allows carrying out thermal annealing at extremely high temperatures (up to 1300°С) in combination with long annealing time (up to 60 min). This system can be used both for R&D activities and for pilot production. Maximum diameter of wafers is 150 mm.
One of STE RTP150 specific features is separation of heater and with reactor heating wafer. Heater consists of halogen lamps located outside the reactor and heats graphite table through the quartz window in the process chamber. Such heater allows carrying out processes with maximum temperature up to 1300°С and heating rate up to 150°С/sec. Water-cooled aluminum chamber allows carrying out long-term annealing. Reactor can be preliminary pumped following by process gas venting.
• thermal annealing in vacuum
• thermal annealing in controlled gas atmosphere with continuous purging of the chamber by inert gas
• thermal annealing in controlled gas atmosphere with automatic pressure keeping
• aluminum process chamber with water cooling
• halogen lamp heating unit with air cooling
• preliminary pumping of the process chamber by membrane or optional scroll pump
• automation of pumping and gas purging, allowing carrying out process by «one button push»
• multi-stage process by built-in PID controller
• optical pyrometer for additional temperature control (optional), optical access to the center and the edge of 150 mm wafer
• working table temperature control by two thermocouples
• easy operation and maintenance
| Ultimate pressure, Torr | <10(B); <0,1(О) |
| Pumping speed, m3/hour | 5 |
| Water cooling of reactor walls | (B) |
| Max. diameter of wafer, mm | 150 |
| Max. heating rate, °С/sec | 150 |
| Max. heating temperature, °С | 1300 |
| Heating uniformity for 100 mm wafer, % | ±1 (up to 500°С) ±2 (up to 1300°С) |
| Annealing in vacuum | (B) |
| Annealing in oxygen | (О) – gas supply line
with MFC |
| Quantity of thermocouples, pcs. | 2 |
| Optical pyrometer | (О) |
| Full automation of annealing process | (B) |
This Item is subject to prior sale without notice.Photos are only for reference.
