SPTS Technologies SPTS RIE-10 Omega LPX Rapier SPTS Rapier DRIE

Description

Please contact us if you are interested in the SPTS Technologies SPTS RIE-10  Omega LPX Rapier SPTS Rapier DRIE . The SPTS Technologies  SPTS RIE-10 Omega LPX Rapier SPTS Rapier DRIE is only for end users and are subject to prior sale without notice. Appreciate your time.

SPTS Rapier DRIE (RIE-10)

SPTS RIE-10, a state-of-the-art deep silicon etching system, is furnished with dual plasma sources and dual gas inlets. The tool is characterized with high etch rate 6-10 µm/min; high aspect ratio 50:1; good selectivity > 50:1 to resist and >100:1 to silicon oxide; and a good uniformity < 5% cross 6” wafers. Its fixed RF matching technology reduces the step-process time to 1 second, which leads to a controllable side wall roughness < 6nm for nanoscale features. Major features include:

· Primary rf power up to 3,000W

· Secondary rf power up to 3,000W

· Substrate power up to 300W

· Chuck temperatures from -15°C to +40°C

· Handling 6″ or smaller samples

· Claritas End Point Detector

Applications

· Si etch only

· High aspect ratio etch: 5 – 50

· Deep etch: 5µm – through Si wafer etch

· Broad feature sizes: from nano- to mm- scales in lateral dimension

· Side wall roughness (scallop depth): 6nm – 700nm

· Only resists and SiO2 or Si3N4 allowed as etching mask

· Handling 6″ or smaller samples

· Absolutely no-metal mask or metal stop layers

Available Processes

· Micro Pillars

· Nano Pillars

· Micro Trenches

· Nano Trenches

· Via etch

· Through wafer via etch

· Wafer thinning

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