NPE-4000 PECVD Systems

NANO-MASTER’s PECVD systems are capable of depositing high quality SiO₂, Si₃N₄, CNT, DLC or SiC films. Depending on application, RF showerhead, Hollow Cathode, ICP or Microwave plasma sources can be used. The platen can accomodate up to 8″ wafers and can be biased with RF, Pulsed DC or DC while being heated up to 800°C resistively or with IR lamps. The chamber is evacuated to 5×10^-7 Torr pressure range using 250 l/sec turbo molecular pump backed with 5 cfm mechanical pump. The system utilizes LabVIEW PC control for full automation.

NPE-4000 for Si3N4 and SiO2 Deposition	NPE-4000 for CNT	NPE-4000 for DLC

• 13″ Al chamber or 14″ SS cube chamber
• 5×10^-7 Torr base pressure attained with turbo pumping package
• Plasma sources: RF showerhead, ICP, hollow cathode and microwave
• Gas ring for precursors and gases
• Platen: 200°C to 800°C, rotating, biasable with RF, low frequency RF, DC, and pulsed DC
• MFC’s with electropolished gas lines and pneumatic shut-off valves
• Fully automated PC based, recipe driven
• LabVIEW user interface
• EMO protection and safety interlocks

Options

-500 V Bias, 700 °C, ICP Off	300 W RF Bias	-1000 V DC Bias, 500 °C, ICP On
700 °C, ICP On	Heated Plate with RF Bias	Hollow Cathode Plasma Source

• NM-ICP downstream high density plasma source
• Hollow cathode plasma source
• Microwave plasma source
• Substrate Pulsed DC bias
• Substrate LF bias for film stress control
• Rotating platen for coating 3D parts
• Auto Load/Unload
• Dry Pump
• Bubblers for Organo-metallics with heated gas lines
• Gas box for toxics gases with toxic gas monitors
• End point detection
• Various dopants (PH₃, B₂H₆)
• Dural chamber systems-NRP-4000 PECVD and RIE:

Applications:

• Encapsulation, isolation
• Photonic structures
• DLC’s coating
• CNT’s – Memory devices
• Surface passivation layer – Solar cells
• Graphene – Nano scale electronics

GENERAL SPECIFICATIONS

1. Platen Size: Up to 8”
2. Plasma Source Diameter: 8” RF plate with shower head gas distribution
3. Number of MFC’s: 5 or up to 10 (with separate gas box)
4. Source to Platen Distance: 2” to 4”
5. Vacuum: 5 10-7 Torr range with 260 l/sec corrosive turbo pump with 9cfm mech.
6. Maximum Platen Temperature: 400°C for 8” platen, 700°C for 6” platen, 800°C for 4” platen,
7. RF power Supply: 13.56MHz, 600W RF for plasma source or 1KW RF supply for ICP source
8. LF Power for biasing the platen: 300W, 350-450KHz

FACILITY REQUIREMENTS

1. Power Input: 208V/380V/415V, 20A/Phase, 50/60Hz
2. Chilled Water: 2gpm @ 50 psi, 18°C
3. Compressed Air: 1/4” Swagelok, 80-90 PSI
4. Processed Gas: 1/4” Swagelok, 20 PSIG
5. Nitrogen: 1/4“ Swagelok, 10 PSIG
6. Exhaust (System): NW25

DIMENSIONS Width Depth Height

1. NPE-3500 22” 26” 60”
2. NPE-4000 43” 26” 60”