Description
- Substrate heat to 350ºC, 550ºC or 850ºC.
- Substrate cooling via water-cooled or gas injected work holder with auto clamping.
- High power RF bias with excellent power transfer stability during rotation.
- RF etch capability.
- Four sputtering electrodes; 2″, 3″, 4″, 6″, and 8″ diameter planar target electrodes.
- Sequential or co-deposition sputtering modes.
- Target electrodes are arranged in the same plane as standard, but cluster-focused or off-axis geometry’s are available
- Source to substrate distance may be varied during process.
- Work holder may be dedicated to a full load of wafers, or segmented to allow for a variety of process options.
- Work holder may be used in static or rotational operation.
- Ion Beam “soft etch” using Nordiko patented RF excited filamentless ion beam gun.
- Automated load lock .
- Process control automation system.
- AII mechanized set-points are stored in software for easy adjustment from key board
- Installation through clean room wall or free standing.
- All servicing from rear of machine.
- Small foot print.
- 24.5″ diameter stainless steel substrate table.
- Up or down sputtering geometry’s.
Valid time: Subject to prior sale without notice.
Contact us (sales@semistarcorp.com) for the availability and more info pls. Appreciate your time.
ID-SS1184

