Description
Due to the chamber design and planar ICP source, both ALD and PECVD processes can be ran within the same system without the need of mechanical reconfiguration. The hybrid system al-lows for deposition of both thin ALD films and thick PECVD films within the same chamber and process (“recipe”).
US Patent No.: 11,087,959
The NANO-MASTER NLP-4000 is a stand-alone hybrid PECVD/PEALD system for performing plasma-enhanced atomic layer deposition (PEALD) as well as plasma-enhanced chemical vapor deposition (PECVD). Both processes can be performed in a single chamber without any mechanical reconfiguration. It is also capable of depositing a stack of layers of PEALD/PECVD in the same process. It is CE and SEMI Standards-compliant and capable of processing up to 8” wafers. The system is controlled with LabVIEW software and features three-level password-controlled user authorization using a touch-screen monitor. The system is fully automated, safety-interlocked, recipe-driven, with status indicators and graphic and alphanumeric displays.
- 13″ Ni-plated Al chamber w/ heated chamber wall
- 5×10-7 Torr base pressure attained with turbo pumping package
- ICP plasma source
- High surface ALD filter at the chamber exhaust
- Level precursor distribution
- Platen: Up to 400°C, biasable with RF, handles up to 8″ wafers
- Load Lock: Automatic load and unload
- MFC’s with electropolished gas lines and pneumatic shut-off valves
- Fully automated PC based, recipe driven
- LabVIEW user interface
- EMO protection and safety interlocks
Options
- Provision for 150cc bubblers for Si or Ga for depositing PEVCD films.
- Seperate gas pod for reactive/toxic gasses with gas leak sensors
Applications:
- Metallization and Gate Stack
- GaN G-HEMT Transistor
- Supercapacitor
- Power Electronics
- Gas Permeation Barrier
- Solar Cell Applications
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Nano-Master Main Equipment: Thin Film | Etch | Cleaning | Space Simulation | Hybrid
SS10840
