Description
Refurbished STS / SPTS Multiplex ASE-SR ICP DRIE Deep Silicon Etcher – 100mm
SemiStar Corp. offers a refurbished STS / SPTS Multiplex ASE-SR ICP DRIE Etcher for 100 mm silicon wafer processing. The STS Multiplex platform is widely used for MEMS fabrication, silicon micromachining, deep silicon etching, high-aspect-ratio structures, SOI processing, and semiconductor research and development.
This system is equipped with an ASE-SR (Advanced Silicon Etch – Standard Rate) ICP process module, 100 mm wafer configuration, single-wafer vacuum loadlock, mechanical wafer clamping, helium backside cooling, 1 kW ICP RF source, independently powered lower electrode, temperature-controlled platen, and multiple process gas lines.
The STS ASE-SR process module supports deep reactive ion etching (DRIE) of silicon using alternating silicon etch and fluorocarbon deposition/passivation steps. STS OEM process documentation includes deep, medium-depth, and shallow silicon DRIE starting recipes for the ASE-SR chamber.
SemiStar will supply this system in refurbished working condition to OEM specifications with its current equipment configuration. The system will be inspected, cleaned, refurbished, repaired as necessary, and functionally tested before shipment. Installation, startup assistance, training, and warranty can be provided according to the final quotation and project scope.
Photos show the actual available STS Multiplex system. System configuration is based on the available OEM configuration documentation. Final refurbishment scope, acceptance criteria, delivery schedule, installation, and warranty are based on SemiStar’s official quotation.
STS Multiplex ASE-SR ICP DRIE Configuration
| Item | Configuration |
|---|---|
| Manufacturer | STS – Surface Technology Systems |
| Platform | STS Multiplex |
| Process Module | ASE-SR |
| System Type | ICP DRIE / Deep Silicon Etcher |
| Process Chamber | ICP SC160M Process Chamber (MESC) |
| ICP Source | ICP 240BF Source / Balun Coil ICP Design |
| Wafer Size | 100 mm / 4 inch |
| Wafer Material | Silicon |
| Wafer Handling | Direct, Single-Wafer Handling |
| Loadlock | Vacuum Single-Wafer Loadlock |
| Wafer Clamping | Moving Mechanical Wafer Clamping Electrode with Pin Lift |
| Backside Cooling | Helium Backside Cooling |
| ICP RF Power | 1 kW, 13.56 MHz RF Supply and Matching Unit |
| Lower Electrode RF | 300 / 30 W, 13.56 MHz RF Supply and Matching Unit |
| Electrode Temperature Control | +5°C to +40°C |
| Lower Electrode Chiller | Affinity RWA-012 |
| Gas Box | On-Board Gas Box |
| Turbo Pump | Leybold MAG900 |
| Chamber Backing Pump | Edwards iH80 (M)-Not included |
| Loadlock Pump | Varian TS600-No included |
| Endpoint Detection | No |
| Electrical Supply | 208 V, 60 Hz |
Actual Gas / MFC Configuration
The available STS Multiplex ASE-SR system is equipped with the following OEM-specified process gas configuration. The combination provides the gas hardware required for silicon DRIE as well as additional compatible ICP etch processes.
| Gas | MFC Range | OEM Gas Type |
|---|---|---|
| C4F8 | 200 sccm | Clean |
| SF6 | 300 sccm | Clean |
| O2 | 100 sccm | Clean |
| Ar | 50 sccm | Clean / Process |
| CHF3 | 100 sccm | Clean / Process |
| CF4 | 100 sccm | Clean / Process |
| CO2 | 100 sccm | Clean / Process |
STS ASE-SR Deep Silicon DRIE Process
The STS ASE-SR chamber is designed for deep reactive ion etching of silicon. The process uses alternating etch and deposition/passivation steps to produce anisotropic silicon structures.
STS OEM ASE-SR process documentation uses SF6 and O2 during the silicon etch step and C4F8 during the deposition/passivation step. By repeatedly alternating these steps, the system can produce deep silicon structures with controlled sidewalls and high aspect ratios.
The independent ICP source and lower-electrode RF power allow plasma density and wafer bias to be controlled separately. Mechanical wafer clamping, helium backside cooling, and temperature-controlled lower electrode provide thermal management during deep silicon etching.
OEM DRIE Process Starting Points
STS OEM process documentation provides ASE-SR starting recipes for deep, medium-depth, and shallow silicon DRIE applications. These OEM recipes are process-development starting points and are not guaranteed specifications for every wafer, mask, or device structure.
| OEM Starting Process | Typical Application | OEM Expected Performance |
|---|---|---|
| Deep Etch | Approximately 50 µm trench to >100 µm depth | >3 µm/min; 90–91° profile; approximately 50:1 resist selectivity |
| Mid Recipe | Approximately 20–100 µm trench to <100 µm depth | >3 µm/min; 90–91° profile; approximately 50:1 resist selectivity |
| Shallow / Smooth Sidewall | <10 µm trench to <20 µm depth | >2 µm/min; 90–91° profile; approximately 40:1 resist selectivity |
Process Note: The values above are taken from STS OEM ASE-SR DRIE starting-point documentation and are provided for reference only. Actual results depend on wafer structure, feature geometry, mask, chamber condition, recipe optimization, and process requirements.
Typical Applications
- Deep Reactive Ion Etching (DRIE) of silicon
- Deep silicon etching
- MEMS fabrication
- Silicon micromachining
- Deep silicon trenches
- High-aspect-ratio silicon structures
- SOI wafer processing
- Through-wafer silicon etching
- MEMS trenches and cavities
- Microfluidic structures
- Silicon sensors
- Shallow silicon etch with smoother sidewall requirements
- University, research institute, and semiconductor R&D applications
Key System Features
- STS Multiplex platform
- ASE-SR ICP process module
- 100 mm / 4-inch silicon wafer configuration
- Single-wafer vacuum loadlock
- ICP SC160M process chamber
- ICP 240BF source
- Balun coil ICP design
- 1 kW, 13.56 MHz ICP RF power
- 300 / 30 W, 13.56 MHz lower-electrode RF power
- Mechanical wafer clamping with pin lift
- Helium backside cooling
- Lower-electrode temperature control from +5°C to +40°C
- On-board multi-gas configuration
- Leybold MAG900 turbomolecular pump
Refurbished to OEM Specifications
SemiStar supplies this STS Multiplex ASE-SR ICP DRIE system in refurbished working condition to OEM specifications with the current system configuration. The objective of the refurbishment is to restore the equipment to proper operating condition while maintaining its original STS system architecture and documented configuration.
The refurbishment includes inspection and cleaning of the system, process chamber and loadlock; troubleshooting of electrical, mechanical, vacuum, RF, gas delivery, cooling, control, and wafer-handling systems; repair or replacement of necessary components; vacuum system verification; RF generator and matching network testing; gas delivery and MFC testing; wafer clamping and helium backside cooling verification; chiller and electrode temperature-control testing; loadlock operation testing; control system testing; and final functional testing.
Components are repaired, refurbished, or replaced as necessary according to system condition and final refurbishment scope. The completed system will be functionally tested prior to shipment. Any customer-specific process testing or acceptance requirements must be defined in SemiStar’s official quotation.
Process and Application Review
The STS ASE-SR system provides a proven hardware platform for silicon DRIE, but actual process performance depends on the customer’s device structure and process requirements. Customers should provide wafer size, substrate material, mask material, target etch depth, minimum feature size, required aspect ratio, desired sidewall profile, target etch rate, and other critical process requirements before ordering.
SemiStar can review the application against the actual system configuration before finalizing the equipment quotation.
Related STS / SPTS Equipment
SemiStar may also have other STS / SPTS refurbished equipment available, including Multiplex ASE, ASE-SR, HRM, ICP, RIE, M/PLEX, Bosch Process DRIE, and other plasma etch configurations.
For additional RIE, ICP and DRIE equipment, please visit our RIE / ICP / DRIE / Bosch Process equipment category.
Important Notes
- This equipment will be supplied in refurbished working condition to OEM specifications with its current configuration.
- Refurbished equipment availability is subject to prior sale.
- Photos show the actual available equipment unless otherwise noted.
- System configuration is based on available STS OEM configuration documentation.
- OEM process information and starting recipes are provided for reference and process-development purposes only.
- Actual process performance depends on wafer structure, mask material, feature geometry, recipe, chamber condition, facilities, and process requirements.
- Specific process performance is not guaranteed unless explicitly included as an acceptance requirement in SemiStar’s official quotation.
- Final refurbishment scope, acceptance criteria, installation scope, warranty, delivery schedule, and commercial terms are based on SemiStar’s official quotation.
- SemiStar does not provide spare parts or service support for STS / SPTS systems not sold by SemiStar.
- All OEM names, trademarks, and model names belong to their respective owners.
- All website information is for reference only and is not a purchase specification. Final configuration, specifications, scope, price, and terms are based on SemiStar’s official quotation.
Request a Quote for STS Multiplex ASE-SR ICP DRIE
Please contact SemiStar with your target application and required configuration. Helpful information includes wafer size, substrate material, material to be etched, mask material, target etch depth, minimum feature size, required aspect ratio, sidewall requirements, target etch rate, facility limitations, budget, and expected purchase timeline.
Contact SemiStar
SS380-MSP-325-OEM-31