Description
Please contact us for the availability of the following used Hydride Vapor Phase Epitaxy System (HVPE SYSTEM) semiconductor equipment
Info from OEM for your reference only.
HVPE is a high rate deposition process for growing high quality crystals. A common application is the production of gallium nitride (GaN) templates and bulk crystals. Gallium chloride is generated in-situ via a chlorination reaction. The chloride is then mixed with ammonia in the presence of the substrate at high temperature to form the GaN crystal. Doping is readily achieved with fine control.
Other III/V semiconductor crystals can be produced via HVPE, including indium phosphide (InP) and gallium arsenide (GaAs). Growth rates of up to ~ 300 µm/hr are readily achievable with HVPE.
The HVPE systems can be configured for the particular requirements of the end user.
The item is only for end user. The item is subject to prior sale without notice.
SS5965