Description
Float Zone Si Wafers (2 to 6 inch Si wafers)
Note: Items sold in quantities of 25, unless noted. Please email us to check the availability , price and lead time etc.
Item | Material | Orient. | Diam | Thck | Surf. | Resistivity | Comment |
(mm) | (μm) | Ωcm | |||||
1 | n–type Si:P | [100] | 6″ | 400 ±10 | P/P | FZ >2,000 | SEMI Prime, 1 JEIDA Flat, Empak cst |
2 | n–type Si:P | [100] | 6″ | 375 ±10 | P/E | FZ 2,000–10,000 | SEMI Prime, Empak cst |
3 | n–type Si:P | [111] ±0.5° | 6″ | 675 | P/P | FZ >6,900 | SEMI Prime, 1 JEIDA Flat (47.5mm), in Empak, cassettes of 6, 8 & 10 wafers |
4 | n–type Si:P | [112–5° towards[11–1]] ±0.5° | 6″ | 1,000 ±10 | C/C | FZ >3,000 | SEMI, 1 JEIDA Flat (47.5mm), Empak cst, TTV<4µm |
5 | |||||||
6 | p–type Si:B | [100] | 5″ | 525 ±15 | P/E | FZ 14–22 | SEMI Prime, hard cst |
7 | n–type Si:P | [100] | 5″ | 625 | P/P | FZ 5,500–14,000 | SEMI Prime, 1Flat, Empak cst, in cassettes of 7, 8, 8. |
8 | n–type Si:P | [100] | 5″ | 625 | P/P | FZ 5,500–14,000 | SEMI Prime, 1Flat, in Empak, cassettes of 5 & 12 wafers |
9 | n–type Si:P | [111] | 5″ | 300 ±15 | P/E | FZ 1,000–3,000 | Prime, hard cst |
10 | |||||||
11 | |||||||
12 | p–type Si:B | [100] | 4″ | 200 ±10 | BROKEN | FZ 3,000–5,000 | Empak cst, 6 shattered wafers |
13 | p–type Si:B | [111] ±0.5° | 4″ | 525 | P/E | FZ 5,000–9,000 | SEMI Prime, 1Flat, Empak cst |
14 | p–type Si:B | [111] ±0.5° | 4″ | 1,000 | P/E | FZ >5,000 | SEMI, 1Flat, Empak cst |
15 | p–type Si:B | [111] ±0.5° | 4″ | 525 | P/P | FZ 3,000–5,000 | SEMI Prime, 1Flat, Empak cst |
16 | n–type Si:P | [100] | 4″ | 11,700 | P/E | FZ 6,000–10,000 | SEMI Prime, 1Flat, Individual cst |
17 | n–type Si:P | [100] | 4″ | 380 | P/E | FZ 5,000–10,000 | SEMI Prime, 1Flat, Empak cst |
18 | n–type Si:P | [100] | 4″ | 1,000 | P/E | FZ 5,000–12,000 | SEMI Prime, 1Flat, Empak cst |
19 | n–type Si:P | [100] | 4″ | 380 | P/E | FZ 5,000–10,000 | SEMI Prime, 1Flat, Empak cst |
20 | n–type Si:P | [100] | 4″ | 380 | P/E | FZ 5,000–10,000 | SEMI Prime, 1Flat, Empak cst |
21 | n–type Si:P | [100] | 4″ | 380 | P/P | FZ 5,000–10,000 | SEMI Prime, 1Flat, Empak cst, 3 csts (3,3,3) |
22 | n–type Si:P | [100] | 4″ | 525 | P/E | FZ 4,000–7,000 | SEMI, 1Flat |
23 | n–type Si:P | [100] | 4″ | 200 | P/P | FZ >3,000 | SEMI Prime, 1Flat, Empak cst |
24 | n–type Si:P | [100] | 4″ | 300 | P/E | FZ 3,000–4,000 | SEMI Prime, 2Flats, Empak cst |
25 | n–type Si:P | [100] | 4″ | 300 | P/E | FZ 3,000–4,000 | SEMI Prime, 2Flats, Empak cst |
26 | n–type Si:P | [100] | 4″ | 525 | P/E | FZ 3,000–4,000 | SEMI, 1Flat |
27 | n–type Si:P | [100] | 4″ | 300 | P/E | FZ 2,000–3,000 | SEMI Prime, 2Flats, Empak cst |
28 | n–type Si:P | [100] | 4″ | 525 | P/E | FZ >1,000 {1,720–2,120} | SEMI, 2Flats Lifetime>6ms, cassettes of 8 and 9 wafers (3 of 9 wafers with minor scratches) |
29 | n–type Si:P | [111] ±0.5° | 4″ | 525 | P/P | FZ 8,000–10,000 | SEMI Prime, 1Flat, Empak cst |
30 | n–type Si:P | [111] | 4″ | 2,000 | P/P | FZ 7,500–14,000 | SEMI Prime, 1Flat, in single wafer csts, sealed in groups of 5 |
31 | n–type Si:P | [111] ±0.5° | 4″ | 675 | P/E | FZ 7,500–14,000 | SEMI Prime, 1Flat, Empak cst |
32 | n–type Si:P | [111] ±0.5° | 4″ | 675 | P/E | FZ 7,500–14,000 | SEMI Prime, 1Flat, Empak cst |
33 | n–type Si:P | [111] ±0.5° | 4″ | 675 | P/E | FZ >7,000 | SEMI, 1Flat, Empak cst |
34 | n–type Si:P | [111] ±0.5° | 4″ | 675 | P/E | FZ >7,000 | SEMI, 1Flat, Empak cst |
35 | n–type Si:P | [111] ±0.5° | 4″ | 675 | P/E | FZ >7,000 | SEMI Test, 1Flat Wafer is unselaed and scratched |
36 | n–type Si:P | [111] ±0.5° | 4″ | 200 ±10 | P/P | FZ 5,000–10,000 | SEMI Prime, 1Flat, in Empak, cassettes of 6, 6 & 7 wafers |
37 | n–type Si:P | [111] ±0.5° | 4″ | 525 | P/P | FZ 5,000–8,000 | SEMI Prime, 1Flat, Empak cst |
38 | n–type Si:P | [111] ±0.5° | 4″ | 525 | P/P | FZ 5,000–8,000 | SEMI Prime, 1Flat, Empak cst |
39 | n–type Si:P | [111] ±0.5° | 4″ | 525 | P/P | FZ 3,000–10,000 | SEMI Prime, 1Flat, Empak cst |
40 | n–type Si:P | [111] ±1° | 4″ | 380 | P/E | FZ 2,000–3,000 {2,085–2,624} | SEMI Prime, 1Flat, Epak cst, TTV<5µm, T>1,000µs, cassettes of 5, 5 & 10 wafers |
41 | n–type Si:P | [111] ±1° | 4″ | 380 | P/E | FZ 2,000–3,000 | SEMI Prime, 1Flat, Epak cst, TTV<5µm; T>1,000µs, cassettes of 6, 6 & 10 wafers |
42 | n–type Si:P | [111] | 4″ | 355 ±15 | P/P | FZ 1,000–2,000 | SEMI Prime, 1Flat, Empak cst |
43 | n–type Si:P | [111] ±0.5° | 4″ | 1,000 | P/E | FZ >1,000 | SEMI Prime, 1Flat, Empak cst |
44 | n–type Si:P | [111] ±1° | 4″ | 380 | P/E | FZ 1,000–2,000 {1,756–1,962} | SEMI Prime, 1Flat, Epak cst; T>1,000µs |
45 | n–type Si:P | [111] ±1° | 4″ | 380 | P/E | FZ 1,000–2,000 | SEMI Prime, 1Flat, Epak cst; T>1,000µs, cassettes of 5 & 5 wafers |
46 | n–type Si:P | [111] | 4″ | 370 ±5 | L/L | FZ 50–60 | SEMI Prime, hard cst, cassettes of 5, 5, 5, 14 & 25 wafers |
47 | n–type Si:P | [111] | 4″ | 240 ±10 | E/E | FZ 2.81–3.06 | hard cst |
48 | n–type Si:P | [112–5° towards[11–1]] ±0.5° | 4″ | 795 | E/E | FZ >100 | SEMI, 1Flat, Empak cst, TTV<4µm |
49 | n–type Si:P | [755] | 4″ | 500 | P/P | FZ 5,000–8,000 | SEMI Prime, 1Flat, Empak cst |
50 | Intrinsic Si:– | [111] ±0.5° | 4″ | 525 | P/E | FZ 15,000–20,000 | SEMI Prime, 2Flats |
51 | Intrinsic Si:– | [111] ±0.5° | 4″ | 500 | P/P | FZ 15,000–20,000 | SEMI Prime, 2Flats |
52 | Intrinsic Si:– | [111] ±0.5° | 4″ | 380 | P/P | FZ 15,000–20,000 | SEMI Prime, 2Flats |
53 | Intrinsic Si:– | [111] ±0.5° | 4″ | 525 | P/P | FZ 10,000–20,000 | SEMI Prime, 1Flat, Empak cst, in individual cassette. |
54 | Intrinsic Si:– | [111] ±0.5° | 4″ | 1,000 | P/E | FZ >5,000 | SEMI Prime, 1Flat, in Empak, cassettes of 7 & 8 wafers |
55 | |||||||
56 | p–type Si:B | [100] | 3″ | 380 | P/E | FZ 3,000–5,000 | SEMI, 1Flat |
57 | p–type Si:B | [211] ±1° | 3″ | 425 | P/E | FZ >5,000 | SEMI Prime, 1Flat, Empak cst |
58 | p–type Si:B | [211] ±1° | 3″ | 425 | P/E | FZ >5,000 | SEMI Prime, 1Flat, Empak cst |
59 | p–type Si:B | [111] ±0.5° | 3″ | 625 | P/P | FZ >5,000 | SEMI Prime, 1Flat, Empak cst, TTV<4µm |
60 | n–type Si:P | [100] | 3″ | 380 | P/E | FZ 4,000–5,000 | SEMI Prime, 2Flats, hard cst |
61 | n–type Si:P | [100] | 3″ | 280 | P/P | FZ >3,000 | SEMI Prime, 2Flats, hard cst |
62 | n–type Si:P | [211] | 3″ | 380 | P/P | FZ 2,000–6,000 | SEMI, 1Flat |
63 | n–type Si:P | [211] | 3″ | 475 | P/P | FZ NTD 50–60 {53–58} | SEMI Prime, 2Flats, Empak cst |
64 | n–type Si:P | [211] | 3″ | 475 | P/P | FZ NTD 50–60 | SEMI Prime, 2Flats, in Empak, cassettes of 5, 5 & 10 wafers |
65 | n–type Si:P | [111–3.5°] ±0.5° | 3″ | 508 ±15 | P/E | FZ >5,000 | SEMI Prime, 2Flats, Empak cst, cassettes of 5, 7 & 10 wafers |
66 | n–type Si:P | [111–3.5°] ±0.5° | 3″ | 508 ±15 | P/E | FZ >5,000 | SEMI, 2Flats, Empak cst |
67 | n–type Si:P | [111] | 3″ | 380 | P/E | FZ 2,500–3,000 | SEMI Prime, 1Flat, Empak cst |
68 | n–type Si:P | [111] | 3″ | 380 | P/P | FZ 1,800–2,500 | SEMI Prime, 2Flats, Empak cst |
69 | n–type Si:P | [111] ±0.5° | 3″ | 380 | P/E | FZ 1,800–3,000 | SEMI Prime, 2Flats, Empak cst |
70 | n–type Si:P | [111] | 3″ | 380 | P/P | FZ 1,800–2,500 | SEMI Prime, 2Flats, Empak cst |
71 | Intrinsic Si:– | [100] | 3″ | 225 | P/P | FZ >10,000 | SEMI, 1Flat |
72 | Intrinsic Si:– | [100] | 3″ | 380 | P/E | FZ 10,000–20,000 | SEMI Prime, 1Flat |
73 | Intrinsic Si:– | [111] ±0.5° | 3″ | 1,000 | P/P | FZ 20,000–70,000 | Prime, NO Flats in cassettes of 3, 3 & 4. |
74 | Intrinsic Si:– | [111] ±0.5° | 3″ | 500 | P/P | FZ 20,000–60,000 | Prime, NO Flats, in cassettes of 5. |
75 | Intrinsic Si:– | [111] ±0.5° | 3″ | 500 | P/P | FZ 20,000–60,000 | Prime, NO Flats, Empak cst |
76 | Intrinsic Si:– | [111] ±0.5° | 3″ | 500 | P/E | FZ >20,000 | SEMI, 1Flat |
77 | Intrinsic Si:– | [112] | 3″ | 380 | P/P | FZ >5,000 | SEMI Prime, 1Flat, Empak cst |
78 | |||||||
79 | p–type Si:B | [100] | 2″ | 250 | BROKEN | FZ >500 | SEMI, 2Flats, hard cst |
80 | p–type Si:B | [100] | 2″ | 150 | P/P | FZ ~50 {28–38} | SEMI, 2Flats, hard cst |
81 | p–type Si:B | [100] | 2″ | 300 | P/P | FZ 1–10 {6.4–7.0} | SEMI, 2Flats, hard cst |
82 | p–type Si:B | [100] | 2″ | 300 | P/P | FZ 1–10 | SEMI, 2Flats, hard cst |
83 | p–type Si:B | [111] ±0.5° | 2″ | 3,000 | P/E | FZ >10,000 | NO Flats |
84 | p–type Si:B | [111] ±0.5° | 2″ | 2,000 | P/E | FZ 8,000–10,000 | SEMI, 1Flat, Lifetime>2,000µs, in single wafer cassettes, sealed in groups of 5 |
85 | p–type Si:B | [111] ±0.5° | 2″ | 625 | P/P | FZ 5,400–20,000 | SEMI, 1Flat, hard cst |
86 | p–type Si:B | [111] ±0.5° | 2″ | 280 | P/P | FZ 5,400–20,000 | SEMI, 1Flat, hard cst |
87 | p–type Si:B | [111] ±0.5° | 2″ | 280 | P/P | FZ 5,400–20,000 | SEMI, 1Flat, hard cst, cassettes of 6, 8 & 10 wafers |
88 | p–type Si:B | [111] ±0.5° | 2″ | 300 | P/E | FZ >5,000 | NO Flats, hard cst |
89 | p–type Si:B | [111] ±0.5° | 2″ | 500 | P/P | FZ >5,000 | SEMI, 1Flat |
90 | n–type Si:P | [110] ±1° | 2″ | 525 | P/E | FZ 5,000–10,000 | SEMI, hard cst, Primary Flat @ [111]±0.5°, Secondary Flat @ [111] 70.5º CW from Primary |
91 | n–type Si:P | [110] ±1° | 2″ | 525 | P/E | FZ 5,000–10,000 | SEMI, hard cst, Primary Flat @ [111]±0.5°, Secondary @ [111] 70.5º CW from Primary, 3, 5 & 7 wafers |
92 | n–type Si:P | [100] | 2″ | 500 | P/P | FZ 3,000–4,000 | SEMI Prime, 2Flats, Empak cst |
93 | n–type Si:P | [100] | 2″ | 300 | P/E | FZ >2,000 | SEMI, 1Flat, hard cst |
94 | n–type Si:P | [100] | 2″ | 200 | P/P | FZ >1,000 | SEMI, 2Flats, hard cst |
95 | n–type Si:P | [100] | 2″ | 70 ±15 | P/P | FZ >1,000 {1,500–1,930} | SEMI, 2Flats, Individual cst |
96 | n–type Si:P | [100] | 2″ | 200 | P/P | FZ 500–1,000 | SEMI, 2Flats, hard cst |
97 | n–type Si:P | [100] | 2″ | 300 | P/E | FZ 13–40 {20–30} | SEMI, 1Flat, hard cst |
98 | n–type Si:P | [111] ±0.5° | 2″ | 430 | P/E | FZ 8,200–13,000 {8,000–13,000} | SEMI, 1Flat, hard cst |
99 | n–type Si:P | [111] | 2″ | 381 | P/E | FZ 2,000–5,000 | SEMI, hard cst |
100 | n–type Si:P | [111] ±0.5° | 2″ | 280 | P/P | FZ >2,000 {2,000–5,000} | SEMI, 1Flat, hard cst |
101 | n–type Si:P | [111] ±0.5° | 2″ | 400 | E/E | FZ NTD 93–113 | SEMI, NO Flats, in coin–roll |
102 | n–type Si:P | [111] ±0.5° | 2″ | 400 | E/E | FZ NTD 93–113 | SEMI,NO Flats, in coin–roll |
103 | n–type Si:P | [111] ±0.5° | 2″ | 400 | E/E | FZ NTD 93–113 | SEMI, NO Flats, coin roll |
104 | n–type Si:P | [111] ±0.5° | 2″ | 300 | P/E | FZ 70–90 {70–80} | SEMI, 2Flats, hard cst |
105 | n–type Si:P | [111–0.03°] ±0.01° | 2″ | 550 | P/E | FZ 40–70 {46–69} | SEMI, 1Flat, hard cst, cassettes of 2, 4 & 5 wafers |
106 | Intrinsic Si:– | [100] | 2″ | 330 | P/P | FZ >20,000 | SEMI, 1Flat, hard cst |
107 | Intrinsic Si:– | [100] | 2″ | 330 | P/P | FZ >8,400 | SEMI, 1Flat, cassettes of 1, 3 wafers |
108 | Intrinsic Si:– | [100] | 2″ | 300 | P/P | FZ >5,000 {5,100–6,500} | SEMI, 2Flats, hard cst |
109 | Intrinsic Si:– | [111] ±0.5° | 2″ | 330 | P/P | FZ >20,000 | SEMI, 1Flat |
110 | Intrinsic Si:– | [111] ±0.5° | 2″ | 380 | P/P | FZ >20,000 | SEMI, 1Flat, hard cst, in cassettes of (6,7,7) |
111 | Intrinsic Si:– | [111] ±0.5° | 2″ | 330 | P/P | FZ >20,000 | SEMI, 1Flat, hard cst |
112 | Intrinsic Si:– | [111] ±0.5° | 2″ | 330 | P/P | FZ >20,000 | SEMI, 1Flat, hard cst Light Scratches |
113 | Intrinsic Si:– | [111] ±0.5° | 2″ | 275 | P/E | FZ >20,000 | SEMI, 2Flats, hard cst |
114 | Intrinsic Si:– | [111] ±0.5° | 2″ | 200 | P/P | FZ >20,000 | SEMI, 1Flat, Individual cst |
115 | Intrinsic Si:– | [111] ±0.5° | 2″ | 275 | P/E | FZ 10,000–20,000 | SEMI, 2Flats, hard cst |
116 | Intrinsic Si:– | [111] ±0.5° | 2″ | 275 | P/E | FZ 10,000–20,000 | SEMI, 2Flats, hard cst |
117 | Intrinsic Si:– | [111] ±0.5° | 2″ | 275 | P/E | FZ 5,000–10,000 | SEMI, 2Flats, hard cst |