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4″ Si Wafers (4 inch Si wafers)

4″ Si Wafers (4 inch Si wafers), Surface – P = Polished, E = Etched, C = AsCut, Ox = Oxide (on that layer); Material – CZ unless noted, Items sold in quantities of 25, unless noted. Please email us to check the availability , price and  lead time etc.

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4″ Si Wafers (4 inch Si wafers)

Note: Surface – P = Polished, E = Etched, C = AsCut, Ox = Oxide (on that layer); Material – CZ unless noted

Note: Items sold in quantities of 25, unless noted. Please email us to check the availability , price and  lead time etc.

Item Material Orient. Diam Thck Surf. Resistivity Comment
(mm) (μm) Ωcm
1 N/Ph [100] 100mm 380um SSP
2 N/Ph [111] 100mm 355um SSP
3 P/B [111] 100mm 255um SSP
4 N/Ph [100] 100mm 470um DSP
5 N/Ph [100] 100mm 525um SSP Mechanical Grade for Spin Coating
6 N/Ph [100] 100mm 500um SSP Prime Grade with flat
7 N/Ph [100] 100mm 400um SSP Test Grade with flat
8 Undoped [100] 100mm 500um DSP Prime Grade
9 Intrinsic Si:- [100] 100mm 500um DSP Prime Grade
10 P/B [100] 100mm 550 SSP 5–20 2 SEMI Flats
11 P/B [100] 100mm 380 SSP 0.03-0.07 2 SEMI Flats
12 P/B [111] 100mm 375 SSP 2–5 1 SEMI Flat
13 P/B [111] 100mm 525 SSP 2–5 1 SEMI Flat
14 P/B [100] 100mm 425 SSP 0.1-50 2 SEMI Flats
15 N/As [111] 100mm 525 SSP 0.0025-0.004 1 SEMI Flat
16 N/Ph [100] 100mm 525 SSP 3–5 2 Flats Non-Semi
17 N/Ph [100] 100mm 525 SSP 1.1-1.35 2 SEMI Flats
18 N/Sb [111] 100mm 525 SSP 0.01-0.02 2 SEMI Flats
19 N/Sb [100] 100mm 625 SSP 0.01-0.02 2 SEMI Flats
20 N/Ph [100] 100mm 775 SSP 13–20 2 SEMI Flats
21 N/Sb [100] 100mm 550 SSP 0.01-0.02 2 SEMI Flats
22 N/Ph [100] 100mm 550 SSP 2–5 2 SEMI Flats
23 N/Ph [100] 100mm 525 SSP 0.5-1.8 1 Flat Non-Semi
24 N/Ph [100] 100mm 525 SSP 1–20 1 SEMI Flat
25 p-type Si:B [100] 4″ 220 ±10 P/E FZ >10,000 SEMI Prime, 1Flat, Empak cst
26 p-type Si:B [100] 4″ 230 ±10 P/E FZ >10,000 SEMI Prime, 1Flat, Empak cst
27 p-type Si:B [100] 4″ 500 P/P FZ >7,000 SEMI Prime, 1Flat, Empak cst, TTV<1μm
28 p-type Si:B [100] 4″ 300 P/P FZ 500–1,000 SEMI Prime, 2Flats, Empak cst
29 p-type Si:B [100] 4″ 300 P/P FZ 500–1,000 SEMI Prime, 2Flats, Empak cst
30 p-type Si:B [100] 4″ 1,000 P/P FZ 100–200 SEMI Prime, 1Flat, Empak cst
31 p-type Si:B [100] 4″ 610 ±10 E/E FZ 8–12 1Flat at [100], Empak cst
32 p-type Si:B [100] 4″ 250 P/P FZ 1–3 {0.97–1.01} SEMI Prime, 2Flats, Empak cst
33 p-type Si:B [100] ±0.3° 4″ 500 ±15 P/E FZ 1–5 SEMI Prime, 2Flats, Lifetime>100μs, Empak cst
34 p-type Si:B [100] 4″ 525 P/E FZ 1–5 {1.83–2.35} SEMI Prime, 2Flats, Lifetime>13.7μs, Empak cst
35 p-type Si:B [100] 4″ 280 P/P FZ 0.05–1.00 SEMI Prime, 1Flat, Empak cst
36 p-type Si:B [111] ±0.5° 4″ 400 ±15 P/E FZ >20,000 SEMI Prime, 1Flat, Empak cst, TTV<5μm, Lifetime>1,000μs
37 p-type Si:B [111] ±0.5° 4″ 397 P/E FZ 10,000–15,000 SEMI Prime, Backside ACID Etched, Empak cst
38 n-type Si:P [110] ±0.5° 4″ 500 P/P FZ 5,000–15,000 SEMI Prime, 2Flats — Primary @ <111>±0.5° — edge unrounded, Secondary @ <111>. 70.5° CCW from Primary, Empak cst, Lifetime>6,000μs
39 n-type Si:P [110] ±0.5° 4″ 500 P/P FZ 5,000–15,000 SEMI Prime, 2Flats — Primary @ <111>±0.5° — edge unrounded, Secondary @ <111>. 70.5° CCW from Primary, in Empak cassette Lifetime>6,000μs
40 n-type Si:P [110] ±0.5° 4″ 500 P/P FZ 5,000–15,000 SEMI Prime, 2Flats — Primary @ <111>±0.5°, Secondary @ <111>. 70.5° CCW from Primary, in Empak cst, 3 wafers with minor edge chips, Lifetime >6,000μs
41 n-type Si:P [100] 4″ 200 ±10 P/P FZ >5,000 SEMI TEST (Scratches & defects on back–side), 1Flat, Ox<1E16/cc, C<1E16/cc, Lifetime>1,050μs, Empak cst
42 n-type Si:P [100] 4″ 200 ±10 P/P FZ >5,000 SEMI Test, 1Flat, Empak cst, Sratches on both sides
43 n-type Si:P [100] 4″ 380 P/E FZ 5,000–10,000 SEMI Prime, 1Flat, Lifetime>1,000μs, in Empak cassettes of 2 wafers
44 n-type Si:P [100–1.5° towards[110]] ±0.5° 4″ 525 P/E FZ >5,000 SEMI Prime, 2Flats, Lifetime>980μs, in Empak
45 n-type Si:P [100] 4″ 500 G/G FZ 4,300–6,300 SEMI, 2Flats, Lifetime>1,000μs, Both sides Ground, Empak cst
46 n-type Si:P [100] 4″ 525 P/E FZ 4,200–8,000 SEMI TEST (Bad Surface & Chips), Lifetime>1,400μs, 1Flat, Empak cst
47 n-type Si:P [100] 4″ 525 P/E FZ 4,200–8,000 SEMI TEST (Bad Surface & Chips), Lifetime>1,400μs, 1Flat, in Empak cassettes of 6, 7 & 7 wafers
48 n-type Si:P [100] 4″ 380 P/E FZ >3,500 SEMI Prime, 1Flat, Empak cst
49 n-type Si:P [100] ±0.2° 4″ 380 ±10 P/E FZ >3,500 SEMI TEST (in opened Empak cst), 1 Flat
50 n-type Si:P [100] 4″ 200 P/P FZ >3,000 SEMI Prime, 1Flat, Empak cst, MCC Lifetime > 1,000μs,
51 n-type Si:P [100] 4″ 200 P/P FZ >3,000 SEMI Prime, 1Flat, Empak cst
52 n-type Si:P [100] 4″ 400 P/E FZ 2,000–6,500 SEMI Prime, 2Flats, Empak cst, Lifetime>1,000μs
53 n-type Si:P [100] 4″ 915 ±10 E/E FZ 2,000–3,000 1Flat at [100], Empak cst
54 n-type Si:P [100] 4″ 300 L/L FZ 1,100–1,600 SEMI, 1Flat, Empak cst
55 n-type Si:P [100] ±1° 4″ 200 ±10 P/P FZ >1,000 SEMI Prime, 1Flat, TTV<1μm, in Empak cst
56 n-type Si:P [100] 4″ 300 ±5 P/P FZ >1,000 SEMI TEST, 1Flat, TTV<2μm, Empak cst
57 n-type Si:P [100] ±0.2° 4″ 300 ±5 P/P FZ >1,000 SEMI Prime, 1Flat, TTV<2μm, Empak cst
58 n-type Si:P [100] 4″ 200 ±10 BROKEN FZ 800–1,500 Broken P/E wafers, in various size pieces, Lifetime >1,000μs
59 n-type Si:P [100] 4″ 300 L/L FZ 800–1,500 SEMI, 1Flat, Empak cst
60 n-type Si:P [100] 4″ 500 P/P FZ 50–70 SEMI Prime, 1Flat, Empak cst
61 n-type Si:P [100] 4″ 500 ±10 P/P FZ 50–70 SEMI Prime, 1Flat, Empak cst
62 n-type Si:P [100] 4″ 300 P/P FZ 1–5 {1.03–1.56} SEMI Prime, 2Flats, Empak cst, Lifetime ~500μs
63 n-type Si:P [100] 4″ 300 P/P FZ 1–5 SEMI TEST (small defects on the back side). 2Flats, Empak cst
64 n-type Si:P [100–4° towards[111]] ±0.5° 4″ 525 P/E FZ 1–10 {3.2–4.0} SEMI Prime, 2Flats, Lifetime: ~500μs, in Empak cassettes of 5 wafers
65 n-type Si:P [111] ±0.5° 4″ 300 P/E FZ 15,000–20,000 SEMI Prime, back–side ACID Etched, Empak cst
66 n-type Si:P [111] ±0.5° 4″ 500 P/E FZ 10,000–15,000 SEMI Prime, 1Flat, Empak cst, TTV<5μm
67 n-type Si:P [111] ±0.25° 4″ 675 P/E FZ 10,000–20,000 SEMI TEST (Light scratches), 1Flat, Lifetime>1,000μs, Empak cst,
68 n-type Si:P [111] ±0.5° 4″ 675 P/E FZ 7,500–14,000 SEMI Prime, 1Flat, Lifetime>800μs, Empak cst
69 n-type Si:P [111] ±0.5° 4″ 630 P/G FZ >7,000 SEMI Prime, 1Flat, in Empak, Lifetime>1,000μs, Back–side Fine Ground
70 n-type Si:P [111] ±0.5° 4″ 675 P/E FZ >7,000 SEMI, 1Flat, Lifetime>1,600μs, in Empak cassettes of 6 and 8 wafers
71 n-type Si:P [111] ±0.5° 4″ 675 P/E FZ >7,000 SEMI, 1Flat, in Empak, Lifetime>1,600μs
72 n-type Si:P [111] ±0.5° 4″ 675 P/E FZ >7,000 SEMI TEST (Scratches, in Unsealed Empak cassette), 1Flat, Lifetime>1,600μs
73 n-type Si:P [111] ±0.25° 4″ 675 P/E FZ 7,000–10,000 SEMI Prime, 1Flat, in Empak, Lifetime>1,000μs, Light scratches
74 n-type Si:P [111] ±0.5° 4″ 150 ±10 P/P FZ >5,000 SEMI Prime, 2Flats, Empak cst, TTV<5μm
75 n-type Si:P [111] ±0.5° 4″ 150 ±15 P/P FZ >5,000 SEMI Prime, 2Flats, Empak cst
76 n-type Si:P [111] ±0.5° 4″ 150 ±10 P/P FZ >5,000 SEMI Prime, 2Flats, Empak cst, TTV<5μm, Bow<20μm, Warp<20μm, Wafers with dimples
77 n-type Si:P [111] ±0.5° 4″ 150 ±10 BROKEN FZ 5,000–10,000 Broken P/E wafers, in Empak
78 n-type Si:P [111] ±0.5° 4″ 525 P/E FZ >5,000 SEMI Prime, 1Flat, Lifetime>1,000μs, Empak cst
79 n-type Si:P [111–1° towards[110]] ±0.5° 4″ 525 P/E FZ >5,000 SEMI TEST (scratches on back–side), 1Flat, Empak cst
80 n-type Si:P [111] ±0.25° 4″ 675 P/E FZ 5,000–7,000 SEMI Prime, 1Flat, in Empak, Lifetime>1,000μs
81 n-type Si:P [111] ±0.25° 4″ 675 P/E FZ 5,000–7,000 SEMI TEST (light scratches), 1Flat, Lifetime>1,000μs, in Empak
82 n-type Si:P [111] ±0.5° 4″ 525 P/P FZ >3,000 SEMI Prime, 2Flats, Lifetime>1,000μs, Empak cst
83 n-type Si:P [111] ±0.5° 4″ 525 P/P FZ >3,000 SEMI Prime, 1Flat (32.5mm)
84 n-type Si:P [111] ±0.5° 4″ 525 P/P FZ >3,000 SEMI Prime, 2Flats, Lifetime>1,000μs, in Empak cassettes of 5, & 10 wafers
85 n-type Si:P [111] ±0.5° 4″ 525 P/E FZ 3,000–5,000 SEMI Prime, 1Flat, in Empak, Lifetime>1,000μs
86 n-type Si:P [111] ±0.25° 4″ 525 P/E FZ 3,000–5,000 SEMI Prime, 1Flat, in Empak cassettes of 3, 3 & 4 wafers
87 n-type Si:P [111] ±0.25° 4″ 525 P/E FZ 3,000–5,000 SEMI TEST (light scratches), 1Flat, Empak cst
88 n-type Si:P [111] ±0.5° 4″ 285 ±10 P/P FZ 2,500–2,700 SEMI Prime, 2Flats, Empak cst
89 n-type Si:P [111] ±0.5° 4″ 285 ±10 P/P FZ 2,500–2,700 SEMI Prime, 2Flats, Empak cst
90 n-type Si:P [111] ±0.5° 4″ 290 ±10 P/P FZ 2,500–3,500 SEMI TEST (Surface defects), 2Flats, Empak cst
91 n-type Si:P [111] ±1° 4″ 380 P/E FZ 2,000–3,000 SEMI Prime, 1Flat, TTV<5μm, Lifetime>1,000μs, in Epak cassettes of 6 wafers
92 n-type Si:P [111] ±0.5° 4″ 525 P/E FZ 1,500–3,000 SEMI Prime, 1Flat, in Empak, Lifetime>1,100μs
93 n-type Si:P [111] ±0.5° 4″ 525 P/E FZ 900–2,300 SEMI Test, Empak cst
94 n-type Si:P [111] ±0.5° 4″ 200 P/P FZ 430–550 SEMI Prime, 1Flat, Empak cst
95 n-type Si:P [111] ±1° 4″ 475 P/E FZ 400–800 Polished but unsealed and dirty. Can be polished and cleaned for additional charge. SEMI, 1Flat, Empak cst
96 n-type Si:P [111] 4″ 370 ±5 L/L FZ 50–60 SEMI, in hard cassettes of 5, 5, 8, 8, 8 & 14 wafers
97 n-type Si:P [111] ±0.5° 4″ 475 ±13 P/E FZ 6.03–7.37 SEMI Prime, 2Flats, TTV<10μm, Bow<5μm, Warp<10μm, Empak cst
98 n-type Si:P [111] ±0.5° 4″ 475 ±13 P/E FZ 6.03–7.37 SEMI TEST (Scratches), 2Flats, TTV<10μm, Bow<5μm, Warp<10μm, Empak cst
99 n-type Si:P [111] ±0.5° 4″ 500 ±13 E/E FZ 6.03–7.37 SEMI, 2Flats
100 n-type Si:P [112–3° towards[11–1]] ±0.5° 4″ 762 P/P FZ >100 SEMI Prime, 1Flat, Empak cst
101 n-type Si:P [112–5° towards[11–1]] ±0.5° 4″ 762 P/P FZ ~100 SEMI Prime, 1Flat, Empak cst, TTV<3μm
102 n-type Si:P [112–5° towards[11–1]] ±0.5° 4″ 765 P/P FZ ~100 SEMI Prime, 1Flat, Empak cst, TTV<3μm
103 n-type Si:P [112–5° towards[11–1]] ±0.5° 4″ 795 E/E FZ >100 SEMI, 1Flat, in Empak, TTV<4μm, Lifetime>2,000μs
104 n-type Si:P [755] 4″ 500 P/P FZ 5,000–8,000 SEMI Prime, 1Flat, in Empak, Lifetime>2,000μs
105 Intrinsic Si:- [100] 4″ 350 P/P FZ >20,000 SEMI Prime, 1Flat, Empak cst
106 Intrinsic Si:- [100] 4″ 525 P/P FZ >20,000 SEMI Prime, 1Flat, Empak cst
107 Intrinsic Si:- [100] 4″ 525 P/P FZ >20,000 SEMI Prime, 2Flats (SF 180° from PF), TTV<10μm, Empak cst
108 Intrinsic Si:- [100] 4″ 525 P/E FZ >20,000 SEMI Prime, 1Flat, Empak cst, TTV<5μm
109 Intrinsic Si:- [100] 4″ 525 P/E FZ >20,000 SEMI Prime, 1Flat, Empak cst, TTV<5μm
110 Intrinsic Si:- [100] 4″ 675 ±5 P/P FZ >20,000 SEMI, 1Flat, Empak cst
111 Intrinsic Si:- [100] 4″ 300 P/E FZ 16,000–20,000 SEMI Prime, 1Flat, Empak cst, Back–side polish is imperfect
112 Intrinsic Si:- [100] 4″ 500 P/E FZ 13,000–20,000 SEMI Prime, 1Flat, Empak cst, TTV<5μm, Front–side Prime polish, Back–side light polish
113 Intrinsic Si:- [100] 4″ 220 ±10 P/P FZ >10,000 SEMI Prime, 1Flat, Empak cst
114 Intrinsic Si:- [100] 4″ 300 P/P FZ >10,000 SEMI Prime, 1Flat, Empak cst
115 Intrinsic Si:- [100] 4″ 475 P/P FZ >10,000 SEMI Prime, 1Flat, Empak cst, TTV<1.5μm
116 Intrinsic Si:- [100] 4″ 615 ±10 C/C FZ >10,000 SEMI Prime, 1Flat, Empak cst
117 Intrinsic Si:- [100] 4″ 700 P/P FZ >10,000 SEMI Prime, 1Flat, Empak cst, TTV<1μm
118 Intrinsic Si:- [100] 4″ 765 C/C FZ >10,000 SEMI Prime, 1Flat, Empak cst
119 Intrinsic Si:- [100] 4″ 380 P/E FZ 8,000–10,000 SEMI TEST (light scratches & particles), 1Flat, Lifetime>1,200μs, in Empak
120 Intrinsic Si:- [100] 4″ 380 BROKEN FZ 8,000–10,000 Broken wafer, in two halves, SEMI, 1Flat, Lifetime>1,200μs
121 Intrinsic Si:- [100] 4″ 350 P/P FZ 5,000–8,000 SEMI TEST (Chuck marks & Scratches), Lifetime>1,200μs, in Empak cassettes of 8 wafers, Lifetime>1,200μs,
122 Intrinsic Si:- [211] ±0.1° 4″ 300 ±15 P/P FZ >3,000 SEMI Prime, 1Flat, Empak cst, TTV<1μm
123 Intrinsic Si:- [111] ±0.5° 4″ 300 P/E FZ 20,000–40,000 SEMI, 1Flat, TTV<5μm, Empak cst
124 Intrinsic Si:- [111] ±0.5° 4″ 500 P/P FZ >20,000 SEMI Prime, 1Flat, Empak cst
125 Intrinsic Si:- [111] ±0.5° 4″ 500 P/E FZ >20,000 SEMI Prime, 1Flat, Empak cst
126 Intrinsic Si:- [111] ±1.0° 4″ 500 P/P FZ >15,000 SEMI Prime, 1Flat, TTV<5μm, Empak cst
127 Intrinsic Si:- [111] ±0.5° 4″ 500 P/P FZ 10,000–15,000 SEMI Prime, 1Flat, Empak cst, TTV<5μm, in Empak cassettes of 9 & 16 wafers
128 Intrinsic Si:- [111] ±0.5° 4″ 500 P/P FZ >10,000 SEMI Prime, 1Flat, Empak cst
129 Intrinsic Si:- [111] ±0.5° 4″ 500 P/P FZ 10,000–20,000 SEMI Prime, 1Flat, in Empak cassettes of 2 wafers
130 Intrinsic Si:- [111] ±0.5° 4″ 525 P/E FZ 10,000–20,000 SEMI, 1Flat, Empak cst
131 p-type Si:B [110] ±0.5° 4″ 500 E/E 59–67 SEMI, 1Flat, Empak cst
132 p-type Si:B [110] ±0.2° 4″ 500 P/P 5–10 SEMI Prime, Primary Flat @ [111]±0.25°, SFlat @ [111]±5° (109.5° CW from PFlat), Empak cst
133 p-type Si:B [110] ±0.25° 4″ 525 P/E 5–10 SEMI Prime, 2Flats @ [111] — Secondary 109.5° CW from Primary, Empak cst
134 p-type Si:B [100] 4″ 500 P/P 10–20 SEMI Prime, 2Flats, in single wafer cassettes, can be ordered singly
135 p-type Si:B [100] 4″ 500 P/P 10–20 SEMI Prime, Empak cst, TTV<5μm
136 p-type Si:B [100] 4″ 500 P/P 10–20 SEMI Prime, 2Flats, Empak cst
137 p-type Si:B [100] 4″ 1,000 P/P 10–20 SEMI Prime, 2Flats, Empak cst, TTV<5μm, Bow<10μm, Warp<20μm
138 p-type Si:B [100] 4″ 1,000 P/P 10–20 SEMI Prime, 2Flats, Empak cst, TTV<5μm, Bow<10μm, Warp<20μm, (Cassettes of 8, 13, 19 wafers)
139 p-type Si:B [100] 4″ 300 P/P 8–12 SEMI TEST — Front–side badly polished, 2Flats, Empak cst
140 p-type Si:B [100] 4″ 525 P/E 8–12 SEMI Prime, 2Flats, in Empak cassettes of 6, 6 & 7 wafers
141 p-type Si:B [100] 4″ 900 P/P 8–20 SEMI Prime, 2Flats, Empak cst
142 p-type Si:B [100] 4″ 300 P/P 5–10 SEMI Prime, 2Flats, Empak cst
143 p-type Si:B [100] 4″ 380 P/E 5–10 SEMI Prime, 2Flats, Empak cst
144 p-type Si:B [100] 4″ 380 P/E 5–10 SEMI TEST (in Opened cassette), 2Flats, Empak cst
145 p-type Si:B [100] 4″ 380 P/E 5–10 SEMI TEST (with bad surface), 1Flat, Empak cst
146 p-type Si:B [100] 4″ 380 P/E 5–10 SEMI Prime, 1Flat, hard cst, Back–side slightly darker than normal
147 p-type Si:B [100] 4″ 380 BROKEN 5–10 Broken P/E Wafers, 1Flat, in Empak
148 p-type Si:B [100] 4″ 380 BROKEN 5–10 Broken P/E Wafers, 2Flats, in Empak
149 p-type Si:B [100] 4″ 380 BROKEN 5–10 Broken (largest piece is ~30%), 1Flat, in Empak
150 p-type Si:B [100] 4″ 380 BROKEN 5–10 Broken P/E wafers, in Empak
151 p-type Si:B [100] 4″ 525 P/E 5–10 SEMI Prime, 1Flat, Empak cst, TTV<4μm, Bow<15μm, Warp<30μm
152 p-type Si:B [100] 4″ 525 P/E 5–10 SEMI Prime, 1Flat, Empak cst, TTV<4μm, Bow<15μm, Warp<30μm
153 p-type Si:B [100] 4″ 525 P/E 5–10 SEMI Test, Dirty and scratched, 2Flats, Empak cst
154 p-type Si:B [100] 4″ 525 P/E 5–10 Prime, 1Flat, Empak cst
155 p-type Si:B [100] 4″ 1,000 P/E 5–10 SEMI Prime, 1Flat, Empak cst
156 p-type Si:B [100–4° towards[110]] ±0.5° 4″ 300 P/E 1–10 SEMI Prime, 2Flats, Empak cst
157 p-type Si:B [100–4° towards[110]] ±0.5° 4″ 300 P/E 1–10 SEMI Test, 2Flats, Empak cst, Wafers with pits
158 p-type Si:B [100] 4″ 381 ±5 P/P 1–30 SEMI Prime, 2Flats, TTV<5μm, Bow<8μm, Warp<20μm, Empak cst
159 p-type Si:B [100] 4″ 475 P/E 1–10 SEMI Prime, 2Flats, Empak cst, Epi edges for 150μm epi growth
160 p-type Si:B [100] ±1° 4″ 500 P/P 1–20 SEMI Prime, 1Flat, Empak cst
161 p-type Si:B [100] 4″ 500 P/P 1–50 SEMI Prime, 2Flats, Empak cst
162 p-type Si:B [100] 4″ 500 P/P 1–50 SEMI Prime, 2Flats, Empak cst
163 p-type Si:B [100] 4″ 500 P/P 1–50 SEMI Prime, 2Flats, Empak cst
164 p-type Si:B [100] 4″ 500 P/P 1–50 SEMI Prime, 2Flats, Empak cst
165 p-type Si:B [100] 4″ 500 P/P 1–50 SEMI Prime, 2Flats, Empak cst
166 p-type Si:B [100] 4″ 500 P/P 1–50 SEMI Prime, 2Flats, Empak cst
167 p-type Si:B [100] 4″ 525 P/P 1–10 SEMI Prime, 2Flats, Empak cst
168 p-type Si:B [100] 4″ 525 P/P 1–5 SEMI Test, 2Flats, Empak cst, Wafers with particles and scratches
169 p-type Si:B [100] ±1° 4″ 525 P/P 1–15 SEMI Prime, 2Flats, Empak cst
170 p-type Si:B [100] 4″ 525 P/E 1–100 SEMI, 2Flats, Empak cst
171 p-type Si:B [100] 4″ 525 NOxP/POxN 1–10 SEMI Prime, 2Flats, Both sides with 150nm of LPCVD Si3N4 over 200nm of SiO2 over Si , Empak cst
172 p-type Si:B [100] 4″ 525 P/P 1–10 SEMI Prime, 2Flats, Empak cst, Both sides with 150nm of LPCVD Stoichiometric Silicon Nitride
173 p-type Si:B [100–0.5°] 4″ 590 ±10 E/E 1–3 SEMI Prime, 2Flats
174 p-type Si:B [100] 4″ 800 P/P 1–30 SEMI, 2Flats, Empak cst
175 p-type Si:B [100] ±1° 4″ 1,000 P/E >1 SEMI Prime, Empak cst, TTV<5μm
176 p-type Si:B [100] 4″ 1,016 ±13 P/E >1 SEMI Test, Empak cst
177 p-type Si:B [100] 4″ 1,025 P/E 1–50 SEMI Prime, Empak cst
178 p-type Si:B [100] ±1° 4″ 1,200 P/P 1–20 SEMI notch Prime, Empak cst
179 p-type Si:B [100] 4″ 1,335 ±10 E/E 1–3 SEMI Prime, 2Flats, Empak cst
180 p-type Si:B [100] 4″ 2,100 P/E 1–100 SEMI Prime, 1Flat, Individual cst, Groups of 5 wafers
181 p-type Si:B [100] 4″ 2,100 P/E 1–100 SEMI Prime, 1Flat, Individual cst
182 p-type Si:B [100] 4″ 3,000 P/E 1–30 {1.3–16.0} SEMI Prime, 2Flats, Sealed in groups of 10 wafers
183 p-type Si:B [100] 4″ 3,000 P/E 1–30 SEMI Prime, 1Flat, Sealed in groups of 10 wafers
184 p-type Si:B [100] 4″ 3,000 P/E 1–100 SEMI Prime, 1Flat, Individual cst
185 p-type Si:B [100] 4″ 3,175 P/P 1–10 SEMI Prime, 2Flats, Individual cst, TTV<8μm
186 p-type Si:B [100] 4″ 3,175 P/P 1–10 SEMI Prime, 2Flats, Individual cst, TTV<8μm
187 p-type Si:B [100] 4″ 3,200 P/E 1–100 SEMI Prime, 1Flat, Individual cst, Sealed as group of 9 wafers
188 p-type Si:B [100] 4″ 525 P/E 0.8–1.0 SEMI Prime, 2Flats, Empak cst
189 p-type Si:B [100] 4″ 275 P/E 0.5–2.0 {0.875–0.905} SEMI Prime, 1Flat, Empak cst, TTV<10μm, Bow<20μm, Warp<30μm, Lifetime>100μs
190 p-type Si:B [100] 4″ 890 ±15 P/P 0.5–10.0 SEMI TEST (Scratches), 1Flat, TTV<8μm, Empak cst
191 p-type Si:B [100] 4″ 525 P/E 0.1–0.2 SEMI Prime, 2Flats, Empak cst
192 p-type Si:B [100] 4″ 350 P/E 0.095–0.130 SEMI Prime, 2Flats, Empak cst
193 p-type Si:B [100] 4″ 220 P/E 0.04–0.06 SEMI Prime, 2Flats, Empak cst
194 p-type Si:B [100–6° towards[110]] ±0.5° 4″ 525 P/E 0.015–0.020 SEMI Prime, 2Flats, in Empak cassettes of 5, 5, 10 & 10 wafers
195 p-type Si:B [100] ±1° 4″ 381 P/E 0.01–10.00 SEMI Prime, 1Flat, Empak cst
196 p-type Si:B [100] 4″ 525 P/E 0.01–0.02 SEMI Prime, 2Flats, Empak cst
197 p-type Si:B [100] 4″ 525 P/E 0.01–0.02 SEMI, 2Flats, Empak cst
198 p-type Si:B [100] 4″ 525 P/POx 0.008–0.020 SEMI Prime, 2Flats, Empak cst
199 p-type Si:B [100] 4″ 5,000 P/E 0.0028–0.0034 Prime, NO Flats, Individual cst, Sealed in group of 4 and 6 wafers
200 p-type Si:B [100] 4″ 300 P/P 0.001–0.005 SEMI Prime, 2Flats, Empak cst
201 p-type Si:B [100] 4″ 500 P/P 0.001–0.005 SEMI Prime, 2Flats, Empak cst, Wafers with striation marks
202 p-type Si:B [100] 4″ 500 P/P 0.001–0.005 SEMI Test, 2Flats, Empak cst, Wafers with striation marks, Unsealed and previously opened
203 p-type Si:B [100] 4″ 525 ±15 P/P 0.001–0.005 SEMI Prime, 1Flat, Empak cst, TTV<7μm
204 p-type Si:B [100] 4″ 525 P/P 0.001–0.005 SEMI Prime, 1Flat, Empak cst
205 p-type Si:B [100] 4″ 525 P/E 0.001–0.005 SEMI Prime, 2Flats, Empak cst, TTV<3μm, Bow<10μm, Warp<25μm
206 p-type Si:B [100] 4″ 525 P/E 0.001–0.005 SEMI Prime, 2Flats, Empak cst
207 p-type Si:B [100] 4″ 525 BROKEN 0.001–0.005 Broken wafer (shattered into many pieces), 1Flat
208 p-type Si:B [100] 4″ 800 C/C 0.001–0.005 SEMI, 2Flats, Empak cst, With striation marks
209 p-type Si:B [100] 4″ 2,000 P/P 0.001–0.005 SEMI Prime, 2Flats, Individual cst
210 p-type Si:B [100] 4″ 725 C/C 0.0009–0.0013 NO Flats, Empak cst
211 p-type Si:B [100] 4″ ? P/P ? SEMI Test, 2Flats, Empak cst
212 p-type Si:B [100] 4″ 375 P/E <0.0015 {0.00091–0.00099} SEMI Prime, 1Flat, Empak cst, TTV<3μm
213 p-type Si:B [111–0.5°] ±0.5° 4″ 525 P/P 5–10 SEMI Prime, 1Flat, in Empak cassettes of 8 & 8 wafers
214 p-type Si:B [111] ±0.5° 4″ 1,000 P/E 5–10 SEMI Prime, 1Flat, Empak cst
215 p-type Si:B [111] 4″ 350 P/E 2–3 Prime, NO Flats, Empak cst
216 p-type Si:B [111–4°] 4″ 525 P/E 1.5–6.0 SEMI Prime, 1Flat, Empak cst
217 p-type Si:B [111] ±0.5° 4″ 1,000 P/E 1–10 SEMI Prime, 1Flat, in hard cassettes of 7 & 8 wafers
218 p-type Si:B [111] ±0.5° 4″ 525 P/P 0.2–1.0 SEMI Prime, 1Flat, Empak cst
219 p-type Si:B [111] ±0.5° 4″ 525 P/P 0.2–1.0 SEMI Prime, 1Flat, Empak cst
220 p-type Si:B [111] ±0.5° 4″ 525 P/P 0.2–1.0 SEMI Prime, 1Flat, in Empak cassettes of 6, 7 & 7 wafers
221 p-type Si:B [111–4°] ±0.5° 4″ 525 P/E 0.01–0.02 SEMI Prime, 1Flat (57.5mm), Empak cst
222 p-type Si:B [111–4°] ±0.5° 4″ 525 P/E 0.01–0.02 SEMI Prime, 1Flat, in Empak cassettes of 7, 8 & 8 wafers
223 p-type Si:B [111–4°] ±0.5° 4″ 525 ±15 P/EOx 0.005–0.015 {0.0086–0.0135} SEMI Prime, 1Flat, Empak cst, TTV<5μm, 5,000A LTO on back–side
224 p-type Si:B [111–3°] ±0.5° 4″ 525 P/E 0.002–0.016 SEMI Prime, 1Flat, in Empak cassettes of 4, 5 & 5 wafers
225 p-type Si:B [111] ±0.5° 4″ 1,000 P/E <0.01 SEMI Prime, 2Flats, Empak cst
226 p-type Si:B [112] ±0.5° 4″ 500 P/P 1–100 SEMI Prime, 1Flat, Empak cst
227 p-type Si:B [113] ±0.5° 4″ 525 P/E 0.010–0.015 SEMI Prime, 1Flat, in Empak cassettes of 8 wafers
228 n-type Si:P [510] ±1° 4″ 1,000 P/P 1–100 Primary Flat Only <001>+/–1°, in Empak cassettes of 3, 3 & 4 wafers
229 n-type Si:P [110] ±0.5° 4″ 525 P/P 20–80 SEMI Prime, 2Flats @ [111] — Secondary 70.5° CW from Primary, Empak cst
230 n-type Si:P [110] ±0.5° 4″ 500 P/P 3–10 SEMI Prime, TTV<10μm, Bow/ Warp<30μm, Primary Flat @ [111]±0.2°, Secondary @ [111] 70.5° CW from Primary, in Empak cassettes of 7 wafers
231 n-type Si:P [110] ±0.3° 4″ 525 P/P 3–10 SEMI Prime, TTV<10µm, Bow/ Warp<30µm, Primary Flat @ [111]±0.2°, Secondary @ [111] 70.5° CW from Primary
232 n-type Si:P [110] ±0.3° 4″ 525 P/P 3–10 SEMI Prime, TTV<10µm, Bow/ Warp<30µm, Primary Flat @ [111]±0.2°, Secondary @ [111] 70.5° CW from Primary, in Empak cassettes of 6 & 7 wafers
233 n-type Si:P [110] ±0.2° 4″ 525 P/E 3–10 SEMI Prime, 2Flats @ [111] — Secondary 70.7° CW from Primary
234 n-type Si:P [110] ±0.2° 4″ 525 P/E 3–9 SEMI Prime, 2Flats, Empak cst
235 n-type Si:Sb [110] ±0.5° 4″ 525 P/P 0.01–0.02 {0.0176–0.0180} Prime, 2Flats @ [111] — Secondary 70.5° CW from Primary, Empak cst
236 n-type Si:As [110] ±0.5° 4″ 275 P/P 0.001–0.005 SEMI TEST (Haze and scratches, TTV<15μm), Primary Flat at [111]±0.5°,
237 Secondary at 70.5°±5° CW from Primary, Empak cst
238 n-type Si:As [110] ±0.5° 4″ 275 ±10 P/P 0.001–0.005 SEMI Prime, 2Flats @ [111] — Secondary 70.5° CW from Primary, Empak cst, TTV<5μm
239 n-type Si:As [110] ±0.5° 4″ 275 ±10 P/P 0.001–0.005 SEMI Prime, 2Flats at [111] 70.5° apart, TTV<5μm, Empak cst
240 n-type Si:As [110] ±0.5° 4″ 400 E/E 0.001–0.005 SEMI, 2Flats @ [111] — Secondary 70.5° CW from Primary, Empak cst
241 n-type Si:P [100] 4″ 310 ±10 P/P 20–30 SEMI Test, 2Flats, Empak cst, Unsealed, Polished but dirty. Can be made prime for additional fee
242 n-type Si:P [100] 4″ 525 P/E 10–30 SEMI, 2Flats, in Empak cassettes of 7 & 7 wafers
243 n-type Si:P [100] 4″ 1,000 P/P 10–30 {15–21} SEMI Prime, 1 Flat @[110]
244 n-type Si:P [100] 4″ 5,800 P/E 10–100 SEMI Prime, 2Flats, Individual cst
245 n-type Si:P [100–4° towards[111]] 4″ 525 P/E 9–11 SEMI Prime, 2Flats, Empak cst
246 n-type Si:P [100] 4″ 224 P/E 5–10 SEMI, Empak cst, Cassette of 12 + 13 wafers
247 n-type Si:P [100] 4″ 224 BROKEN 5–10 SEMI Test, 2Flats, Empak cst
248 n-type Si:P [100] 4″ 350 ±3 P/P 3–5 SEMI Prime, 2Flats, TTV<5μm, Empak cst
249 n-type Si:P [100] 4″ 350 ±10 P/P 3–5 SEMI Prime, 2Flats, in Empak cassettes of 5 & 8 wafers
250 n-type Si:P [100] 4″ 350 P/P 3–5 SEMI Test, 2Flats, Empak cst, Haze, pits, scratches
251 n-type Si:P [100] 4″ 450 C/C 3–5 SEMI Prime, 2Flats, Empak cst
252 n-type Si:P [100] 4″ 525 P/E 3–9 {3.5–8.1} SEMI Prime, 2Flats, TTV<4μm, Bow<15μm, Warp<30μm, Epak cst
253 n-type Si:P [100] 4″ 525 P/E 3–9 SEMI Prime, 2Flats, Empak cst
254 n-type Si:P [100] 4″ 500 ±10 P/P 2–5 SEMI TEST (wafers have spots resembling water splashes, which do not come off), 2Flats, in hard cassettes of 4, 5 & 5 wafers
255 n-type Si:P [100] 4″ 500 ±10 P/P 2–5 SEMI Prime, 2Flats, in Empak cassettes of 6, 6 & 7 wafers
256 n-type Si:P [100] 4″ 525 ±10 P/P 2–5 SEMI Prime, 2Flats, Empak cst
257 n-type Si:P [100] 4″ 250 ±5 P/P 1–100 SEMI Prime, TTV<3μm, Empak cst
258 n-type Si:P [100] 4″ 280 ±2 P/P 1–10 SEMI Prime, 1Flat, Empak cst, TTV<2μm
259 n-type Si:P [100] 4″ 400 ±5 P/P 1–10 SEMI Prime, 1Flat, Empak cst, TTV<1μm, Bow<20μm, Warp<20μm
260 n-type Si:P [100] ±1° 4″ 400 ±5 P/P 1–10 SEMI Prime, Empak cst, TTV<5μm
261 n-type Si:P [100] ±1° 4″ 400 ±10 P/P 1–10 SEMI Prime, 2Flats, Empak cst, TTV<5μm
262 n-type Si:P [100] ±1° 4″ 465 ±10 E/E 1–3 SEMI, 1Flat, Empak cst
263 n-type Si:P [100] 4″ 525 P/P 1–100 SEMI Prime, 1Flat, Empak cst
264 n-type Si:P [100] 4″ 675 P/P 1–30 SEMI Prime, 2Flats, Empak cst, TTV<5μm
265 n-type Si:P [100] 4″ 900 P/P 1–100 SEMI Prime, 2Flats, Empak cst
266 n-type Si:P [100] 4″ 6,000 P/P 1–20 SEMI Prime, 2Flats, Individual cst (Groups of 5 and 8 wafers)
267 n-type Si:P [100] 4″ 525 P/E 0.3–0.5 SEMI Prime, 2Flats, Empak cst
268 n-type Si:P [100] 4″ 200 P/P 0.05–0.15 {0.083–0.090} SEMI Prime, 2Flats, Empak cst
269 n-type Si:P [100–4° towards[011]] ±0.5° 4″ 8,000 P/E 0.05–0.15 SEMI Prime, 1Flat, In Individual csts, Sealed in group of 10 wafers
270 n-type Si:P [100–6° towards[001]] ±0.5° 4″ 8,000 P/E 0.05–0.15 SEMI Prime, 1Flat, In Individual csts, Sealed in group of 2 & 6 wafers
271 n-type Si:P [100–6° towards[011]] ±0.5° 4″ 8,000 P/E 0.05–0.15 SEMI Prime, 1Flat, In Individual csts, Sealed in group of 2 wafers
272 n-type Si:Sb [100] 4″ 400 P/E ~0.02 SEMI Prime, 2Flats, Empak cst
273 n-type Si:Sb [100–6° towards[110]] ±0.5° 4″ 525 P/E 0.015–0.020 SEMI Prime, 2Flats, Empak cst
274 n-type Si:Sb [100] 4″ 525 P/E 0.01–0.02 SEMI Prime, 2Flats, Empak cst
275 n-type Si:P [100] ±1° 4″ 300 P/E 0.007–0.020 SEMI Prime, 2Flats, in Empak cassettes of 5 wafers
276 n-type Si:Sb [100–4° towards[111]] ±0.5° 4″ 500 P/E 0.005–0.030 SEMI Prime, 2Flats, in Empak cassettes of 5 & 9 wafers
277 n-type Si:As [100] 4″ 545 E/E 0.002–0.004 SEMI, 1Flat, Empak cst
278 n-type Si:As [100] 4″ 525 PlyAP/E 0.001–0.005 With layer of Al2O3, ~0.1μm or ~0.05μm thick, Wafers with a matrix of Polycrystalline Silicon dots, Empak cst,
279 [More Info]
280 n-type Si:As [100] 4″ 525 P/P 0.001–0.005 {0.0031–0.0035} SEMI Prime, 1Flat, Empak cst, TTV<3μm, Bow<10μm, Warp<20μm
281 n-type Si:As [100] 4″ 525 P/E 0.001–0.005 SEMI Prime, 2Flats, Empak cst, TTV<4μm, Bow<10μm, Warp<25μm
282 n-type Si:As [100] 4″ 525 P/E 0.001–0.005 SEMI Test (Chipped edge), 2Flats, Empak cst
283 n-type Si:As [100] 4″ 525 P/E 0.001–0.005 SEMI Prime, 2Flats, Empak cst, TTV<4μm, Bow<10μm, Warp<25μm
284 n-type Si:As [100] 4″ 3,000 P/E 0.001–0.005 Prime, 1Flat, Individual cst
285 n-type Si:Sb [211] ±0.5° 4″ 1,500 ±15 P/P 0.01–0.02 SEMI Prime, 1Flat, Empak cst, TTV<1μm
286 n-type Si:Sb [211] ±0.5° 4″ 1,600 C/C 0.01–0.02 SEMI Test, 1Flat, Empak cst, Wafers can be polished for additional fee
287 n-type Si:P [111] 4″ 1,200 P/P 35–85 SEMI Prime, 2Flats, Empak cst
288 n-type Si:P [111] ±0.5° 4″ 1,500 P/E >20 {24–29} SEMI Prime, 2Flats, TTV<5μm, in Empak cassettes of 2 wafers
289 n-type Si:P [111] ±0.5° 4″ 250 P/E 18–25 SEMI Prime, 2Flats, Empak cst
290 n-type Si:P [111] ±0.5° 4″ 500 P/P 11–15 SEMI Prime, 2Flats, Empak cst, Both–sides Epi Ready polished
291 n-type Si:P [111] ±0.65° 4″ 500 P/P 1.3–2.5 SEMI Prime, 2Flats, Empak cst
292 n-type Si:P [111] ±0.5° 4″ 525 P/E 1–5 SEMI Prime, 2Flats, Empak cst
293 n-type Si:P [111] ±0.5° 4″ 1,000 P/P 1–50 SEMI Prime, 1Flat, in Empak cassettes of 5 wafers.
294 n-type Si:P [111] ±0.5° 4″ 1,000 P/E 1–10 SEMI Prime, 2Flats, in Empak cassettes of 3, 3 & 4 wafers.
295 n-type Si:P [111] ±0.5° 4″ 1,000 P/E 1–10 SEMI Prime, 2Flats, in Empak cassettes of 7 wafers
296 n-type Si:P [111] ±0.5° 4″ 10,000 P/E 1–100 {8.3–9.9} Prime, NO Flats, Individual cst, groups of 5 wafers
297 n-type Si:P [111] ±1.0° 4″ 525 P/E 0.3–50.0 SEMI Prime, Empak cst
298 n-type Si:P [111] ±1.0° 4″ 565 ±10 E/E 0.3–50.0 SEMI Prime, Empak cst
299 n-type Si:P [111] ±0.5° 4″ 400 P/P 0.1–0.5 SEMI Prime, 2Flats, Empak cst
300 n-type Si:P [111–4.0°] ±0.5° 4″ 525 P/E 0.1–1.0 SEMI Prime, 2Flats, Empak cst
301 n-type Si:Sb [111] 4″ 525 P/E 0.016–0.020 SEMI Prime, 2Flats, Empak cst
302 n-type Si:Sb [111–4°] ±0.5° 4″ 420 P/EOx 0.008–0.018 {0.0138–0.0151} SEMI Prime, 2Flats, Empak cst, Epi edges, TTV<2μm, HBSD+LTO seal
303 n-type Si:As [111–4°] ±0.5° 4″ 450 P/E 0.002–0.004 Prime, Empak cst
304 n-type Si:As [111–4°] ±0.5° 4″ 300 P/E 0.001–0.005 SEMI Prime, 2Flats, Empak cst, Back Surface: Sand blasted
305 n-type Si:As [111–4°] ±0.5° 4″ 325 P/E 0.001–0.005 SEMI Prime, 2Flats, Empak cst, Back Surface: Sand blasted with LTO seal
306 n-type Si:As [111–4°] ±0.5° 4″ 300 P/E 0.001–0.005 SEMI Prime, 2Flats, Back–side Sand–blasted with LTO seal, in Empak cassettes of 7 wafers
307 n-type Si:As [111–2°] ±0.5° 4″ 400 P/EOx 0.001–0.004 {0.0018–0.0036} SEMI Prime, 1Flat, Epi edges, 0.5μm LTO, Empak cst
308 n-type Si:As [111–4°] 4″ 525 P/E 0.001–0.005 SEMI Prime, 2Flats, Empak cst
309 n-type Si:As [111] ±0.5° 4″ 1,000 P/E 0.001–0.005 SEMI Prime, 2Flats, Empak cst, TTV<4μm, Bow<10μm, Warp<20μm
310 n-type Si:As [111–4°] 4″ ? L/L ? SEMI TEST (in Opened Empak cst), 2Flats (2nd @ 45°)
311 n-type Si:P [112] ±0.5° 4″ 500 P/P 11–15 SEMI Prime, 1Flat, in Empak cassettes of 2 wafers
312 n-type Si:P [113] ±0.5° 4″ 625 P/E 11–15 SEMI Prime, Primary Flat @ [1,–1,0], SF 135° CW from PF, Individual cst
313 Si ? 4″ ? P/P ? SEMI TEST (Unsealed), Empak cst
314 Si [110] ±0.5° 4″ 525 C/C ? Empak cst
315 p-type Si:B [100] 4″ 380 OxP/EOx 5–10 SEMI Prime, 1Flat, Thermal Oxide 2.2±0.2μm thick
316 Si ? 4″ ? P/P ? SEMI TEST (Unsealed), Empak cst
317 Intrinsic Si:- [110] 4″ 500 P/P FZ >20,000 SEMI Prime, 2Flats @ [111] — Secondary 70.5° CCW from Primary, Empak cst
318 p-type Si:B [110] 4″ 965 P/P 25–30 SEMI Prime, 1 Flat @ [1,–1,0], in Empak
319 p-type Si:B [110] 4″ 525 P/E 2–10 PF<111> SF 109.5°
320 p-type Si:B [100] 4″ 300 P/E 800–5,400 SEMI Prime, 1Flat, Empak cst
321 p-type Si:B [100] 4″ 1,000 P/P 200–700 Prime, NO Flats, Empak cst
322 p-type Si:B [100] 4″ 3,000 P/E 46–50 SEMI Prime, 1Flat, Individual cst
323 p-type Si:B [100] 4″ 300 P/P 10–15 SEMI Prime, 2Flats, Empak cst
324 p-type Si:B [100] 4″ 500 P/P 10–20 SEMI Prime, 2Flats, Empak cst
325 p-type Si:B [100] 4″ 3,000 P/E/P 10–15 SEMI Prime, 1Flat, Individual cst
326 p-type Si:B [100–6°] 4″ 250 P/E 8–12 SEMI Prime, 2Flats, Empak cst
327 p-type Si:B [100] 4″ 2,300 P/P 8–12 SEMI Prime, 2Flats, Individual cst
328 p-type Si:B [100–2°] 4″ 300 P/E 6–7 SEMI Prime, 2Flats, Empak cst
329 p-type Si:B [100] 4″ 1,000 P/E 6–7 SEMI Prime, 2Flats, Empak cst
330 p-type Si:B [100] 4″ 1,600 P/P ~6 SEMI Prime, 1Flat, Individual cst
331 p-type Si:B [100–6°] 4″ 525 P/E 4–6 SEMI Prime, 2Flats, Empak cst
332 p-type Si:B [100] 4″ 350 P/E 2–3 Prime, NO Flats, Empak cst
333 p-type Si:B [100] 4″ 200 P/P 1–20 SEMI Prime, 1Flat, Empak cst
334 p-type Si:B [100] 4″ 250 P/E 1–10 SEMI Prime, 2Flats, Empak cst
335 p-type Si:B [100] 4″ 300 P/E/P 1–10 SEMI Prime, 2Flats, Empak cst
336 p-type Si:B [100–10°] 4″ 300 P/E 1–10 SEMI Prime, 2Flats, Empak cst
337 p-type Si:B [100] 4″ 500 P/P 1–10 SEMI Prime, 2Flats, Empak cst
338 p-type Si:B [100–6°] 4″ 525 P/E 1–100 SEMI Prime, 1Flat, Empak cst
339 p-type Si:B [100] 4″ 1,200 P/P 1–15 SEMI Prime, 2Flats, Empak cst
340 p-type Si:B [100] 4″ 350 P/E 0.074–0.075 SEMI Prime, 2Flats, Empak cst
341 p-type Si:B [100–6°] 4″ 525 P/E 0.0042–0.0047 SEMI Prime, 2Flats, Empak cst
342 p-type Si:B [100] 4″ 2,000 P/P 0.001–0.005 SEMI Prime, 2Flats, Individual cst
343 p-type Si:B [111] 4″ 1,000 P/P 8–9 SEMI Prime, 1Flat, Empak cst
344 p-type Si:B [111] 4″ 500 P/P 6–10 SEMI Prime, 1Flat, Empak cst
345 p-type Si:B [111–3°] 4″ 300 P/E 3–4 SEMI Prime, 2Flats, Empak cst
346 p-type Si:B [111–4°] 4″ 525 P/E 1.5–6.0 SEMI Prime, 1Flat, Empak cst
347 p-type Si:B [111] ±0.5° 4″ 1,500 P/P 1–10 SEMI Prime, 1Flat, Empak cst, TTV<5μm
348 p-type Si:B [111–3°] 4″ 400 P/E 0.015–0.018 SEMI Prime, 1Flat, Empak cst
349 p-type Si:B [111] 4″ 525 P/E 0.005–0.006 SEMI Prime, 1Flat, Empak cst
350 p-type Si:B [111] 4″ 300 P/E 0.002–0.003 SEMI Prime, 1Flat, Empak cst
351 p-type Si:B [111–1.5°] 4″ 525 P/E 0.002–0.004 SEMI Prime, 1Flat, Empak cst
352 p-type Si:B [111–3°] 4″ 525 P/E 0.002–0.004 SEMI Prime, 1Flat, Empak cst
353 p-type Si:B [111] 4″ 300 P/E 0.001–0.005 SEMI Prime, 1Flat, Empak cst
354 n-type Si:P [110] ±0.5° 4″ 525 P/P 20–80 SEMI Prime, 2Flats @ [111] — Secondary 70.5° CW from Primary, Empak cst
355 n-type Si:P [110] 4″ 1,000 P/E 12–15 ??
356 n-type Si:P [100] 4″ 200 P/P 49–57 SEMI Prime, 2Flats, Empak cst
357 n-type Si:P [100] 4″ 400 P/E 32–70 SEMI Prime, 2Flats, Empak cst
358 n-type Si:P [100] 4″ 350 P/P 20–23 P/E400 P/P350μm
359 n-type Si:P [100] 4″ 400 P/P 17–19 Prime, NO Flats, Empak cst
360 n-type Si:P [100] 4″ 700 P/E 14–18 Prime, NO Flats, Empak cst
361 n-type Si:P [100] 4″ 250 P/E 11–13 SEMI Prime, 2Flats, Empak cst
362 n-type Si:P [100] 4″ 400 P/P 10–18 SEMI Prime, 2Flats, Empak cst
363 n-type Si:P [100] 4″ 525 P/E 5–10 SEMI Prime, 1Flat, Empak cst
364 n-type Si:P [100] 4″ 500 P/P 4–6 SEMI Prime, 2Flats, Empak cst
365 n-type Si:P [100] 4″ 259 P/P 3–5 SEMI Prime, 2Flats, Empak cst
366 n-type Si:P [100] 4″ 100 P/P 1–10 SEMI Prime, 1Flat, Empak cst
367 n-type Si:P [100] 4″ 400 P/E 1–6 SEMI Prime, 2Flats, Empak cst
368 n-type Si:P [100] 4″ 525 ±10 P/P 1–100 SEMI Prime, 1Flat, Empak cst, TTV<5μm
369 n-type Si:P [100–4°] 4″ 525 P/E/P 1–10 SEMI Prime, 2Flats, Empak cst
370 n-type Si:P [100–2°] 4″ 525 P/E >1 SEMI Prime, 2Flats, Empak cst
371 n-type Si:P [100] 4″ 900 P/P 1–5 SEMI Prime, 1Flat, Empak cst
372 n-type Si:P [100] 4″ 1,000 P/P 1–20 SEMI Prime, 2Flats, Empak cst
373 n-type Si:P [100] 4″ 2,000 P/P 1–10 SEMI Prime, 2Flats, Individual cst
374 n-type Si:P [100] 4″ 2,500 P/P 1–100 SEMI Prime, 2Flats, Individual cst
375 n-type Si:P [100] 4″ 3,000 P/EE 1–20 SEMI Prime, 1Flat, Individual cst
376 n-type Si:P [100] 4″ 6,000 P/P 1–20 SEMI Prime, 2Flats, Individual cst
377 n-type Si:P [100] 4″ 10,000 P/E 1–100 SEMI Prime, 2Flats, Individual cst
378 n-type Si:P [100] 4″ 15,000 P/E 1–100 SEMI Prime, 2Flats, Individual cst
379 n-type Si:P [100] 4″ 300 P/E 0.29–0.31 SEMI Prime, 2Flats, Empak cst
380 n-type Si:Sb [100] 4″ 450 P/E ~0.03 SEMI Prime, 1Flat, Empak cst
381 n-type Si:Sb [100] 4″ 400 P/E ~0.02 SEMI Prime, 2Flats, Empak cst
382 n-type Si:Sb [100] 4″ 525 P/E 0.020–0.022 SEMI Prime, 2Flats, Empak cst
383 n-type Si:Sb [100] 4″ 1,000 P/E 0.015–0.020 SEMI Prime, 2Flats, Empak cst
384 n-type Si:Sb [100] 4″ 600 P/E 0.01–0.03 Strange Flats
385 n-type Si:Sb [100–4°] 4″ 1,500 P/E/P 0.005–0.030 SEMI Prime, 2Flats, Empak cst
386 n-type Si:As [100] 4″ 525 P/E 0.0025–0.0035 SEMI Prime, 2Flats, Empak cst
387 n-type Si:Sb [100] 4″ 1,500 P/E/P 0.001–0.030 SEMI Prime, 2Flats, Empak cst
388 n-type Si:P [111] 4″ 1,500 P/E >20 SEMI Prime, 2Flats, Empak cst
389 n-type Si:P [111] 4″ 250 P/E 18–25 SEMI Prime, 2Flats, Empak cst
390 n-type Si:P [111] 4″ 250 P/E 18–25 SEMI Prime, 2Flats, Empak cst
391 n-type Si:P [111] 4″ 280 P/E 2–5 SEMI Prime, 2Flats, Empak cst
392 n-type Si:P [111] 4″ 2,500 P/P 2.0–2.5 SEMI Prime, 2Flats, Individual cst
393 n-type Si:P [111] 4″ 280 P/E 1–2 SEMI Prime, 2Flats, Empak cst
394 n-type Si:P [111] 4″ 350 P/P 1–20 SEMI Prime, 2Flats, Empak cst
395 n-type Si:P [111–4°] 4″ 525 P/E 1–15 SEMI Prime, 1Flat, Empak cst
396 n-type Si:P [111–1.5°] 4″ 525 P/E 1–2 SEMI Prime, 2Flats, Empak cst
397 n-type Si:P [111] 4″ 1,000 P/E 1–10 SEMI Prime, 2Flats, Empak cst
398 n-type Si:P [111] 4″ 1,000 P/E 1–10 SEMI Prime, 2Flats, Empak cst
399 n-type Si:Sb [111–4°] 4″ 450 P/E 0.025–0.045 SEMI Prime, 2Flats, Empak cst
400 n-type Si:Sb [111–2.5°] 4″ 625 P/E 0.021–0.023 SEMI Prime, 2Flats, Empak cst
401 n-type Si:Sb [111] 4″ 525 P/E 0.016–0.020 SEMI Prime, 2Flats, Empak cst
402 n-type Si:Sb [111–2°] 4″ 380 P/E 0.008–0.018 SEMI Prime, 1Flat, Empak cst
403 n-type Si:Sb [111–3°] 4″ 400 P/E 0.008–0.018 SEMI Prime, 1Flat, Empak cst
404 n-type Si:Sb [111–3°] 4″ 400 P/E 0.005–0.018 SEMI Prime, 2Flats, Empak cst
405 n-type Si:As [111] 4″ 450 P/E 0.004–0.005 SEMI Prime, 1Flat, Empak cst
406 n-type Si:As [111–3°] 4″ 400 P/E 0.001–0.005 SEMI Prime, 1Flat, Empak cst
407 n-type Si:As [111–4°] 4″ 525 P/E 0.001–0.005 SEMI Prime, 2Flats, Empak cst
408 n-type Si:As [111–4°] 4″ 525 P/E 0.001–0.005 SEMI Prime, 1Flat, Empak cst
409 n-type Si:As [111–2.5°] 4″ 525 P/E 0.001–0.005 SEMI Prime, 1Flat, Empak cst
410 n-type Si:As [111–3°] 4″ 525 P/E 0.001–0.005 SEMI Prime, 2Flats, Empak cst

 

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