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Deposition of Si3N4,ALD SAMPLE DATA

Atomic layer deposition (ALD) is an important technique for depositing thin films for a variety of applications. ALD provides precise thickness control and conformal deposition for high aspect ra-tio applications, exceeding the level of other deposition methods. The sequential, self-limiting surface reactions in ALD produce a non-statistical deposition as precursor flux randomness is a non-factor. […]

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Gallium arsenide (GaAs)

Main Refurbished Equipment for Gallium arsenide (GaAs) wafer and devices process and metrology measurement. GaAs is often used as a substrate material for the epitaxial growth of other III-V semiconductors, including indium gallium arsenide, aluminum gallium arsenide and others. The impurities used may be phosphorus, arsenic, antimony, bismuth, or some other chemical element. EXPLANATION: From […]

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Silicon carbide (SiC)

Main Refurbished Equipment for Silicon carbide (SiC) wafers and devices process equipment and metrology measurement. Silicon carbide (SiC) is a compound of silicon and carbon with a chemical formula of SiC. The simplest manufacturing process for producing silicon carbide is to combine silica sand and carbon in an Acheson graphite electric resistance furnace at a […]

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Indium phosphide (InP)

Main Refurbished Equipment for Indium phosphide (InP)  wafer and devices process and metrology measurement. Indium is used to dope germanium to make transistors. It is also used to make other electrical components such as rectifiers, thermistors and photoconductors. Indium can be used to make mirrors that are as reflective as silver mirrors but do not […]

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Gallium nitride (GaN)

Main Refurbished Equipment for Gallium nitride (GaN) wafers and devices process and metrology measurement. Gallium nitride (GaN) is a very hard, mechanically stable, binary III/V direct bandgap semiconductor. With higher breakdown strength, faster switching speed, higher thermal conductivity and lower on-resistance, power devices based on GaN significantly outperform silicon-based devices.Since the 1990s, it has been […]

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Indium gallium phosphide (InGaP)

Main Refurbished Equipment for Indium gallium phosphide (InGaP) wafers and devices process and metrology measurement .  Indium gallium phosphide (InGaP), also called gallium indium phosphide (GaInP), is a semiconductor composed of indium, gallium and phosphorus. It is used in high-power and high-frequency electronics because of its superior electron velocity with respect to the more common semiconductors […]

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Semiconductor fabrication

Main Refurbished Equipment for Semiconductor device fabrication.  Semiconductor device fabrication is the process used to manufacture semiconductor devices, typically integrated circuits (ICs) such as computer processors, microcontrollers, and memory chips (such as NAND flash and DRAM). It is a multiple-step photolithographic and physico-chemical process (with steps such as thermal oxidation, thin-film deposition, ion-implantation, etching) during […]

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General Conditions for Sale of Used or Surplus Material

ACCEPTANCE – Buyer has been informed that the material may have been used in research and development, manufacturing or other production processes and may have contained, come in contact with, or otherwise has been exposed to hazardous substances.  The material has been cleaned in place in order to remove loose matter, but residual contamination may […]

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