Atomic layer deposition (ALD) is an important technique for depositing thin films for a variety of applications. ALD provides precise thickness control and conformal deposition for high aspect ra-tio applications, exceeding the level of other deposition methods. The sequential, self-limiting surface reactions in ALD produce a non-statistical deposition as precursor flux randomness is a non-factor. […]
Atomic layer deposition (ALD) is an important technique for depositing thin films for a variety of applications. ALD provides precise thickness control and conformal deposition for high aspect ra-tio applications, exceeding the level of other deposition methods. The sequential, self-limiting surface reactions in ALD produce a non-statistical deposition as precursor flux randomness is a non-factor. […]
Atomic layer deposition (ALD) is an important technique for depositing thin films for a variety of applications. ALD provides precise thickness control and conformal deposition for high aspect ra-tio applications, exceeding the level of other deposition methods. The sequential, self-limiting surface reactions in ALD produce a non-statistical deposition as precursor flux randomness is a non-factor. […]
Atomic layer deposition (ALD) is an important technique for depositing thin films for a variety of applications. ALD provides precise thickness control and conformal deposition for high aspect ra-tio applications, exceeding the level of other deposition methods. The sequential, self-limiting surface reactions in ALD produce a non-statistical deposition as precursor flux randomness is a non-factor. […]
