Main Maker

PECVD system

  • Substrate Size: up to 12 inch
  • Vacuum 10-7 torr range base pressure
  • Thickness uniformity : ±3%
  • Up to 10 gas lines
  • Substrate Temperature ~ 400 ℃
  • Highly uniform gas distribution
  • Full auto control with touch screen display
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Description

PECVD Deposition System Applications
  • Plasma Cleaning
  • Growth of CNT and Graphene
  • SiOx, SiNx, a-Si, DLC and other Films

PECVD Deposition System Options

  • High vacuum pumping system
  • Load-Lock System(single substrate, cassette-to-cassette)
  • Cluster able for vacuum transfer of substrates

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