PA-MOCVD Systems

NANO-MASTER has developed the world’s first table top Plasma Assisted Metal Organic Chemical Vapor Deposition (PA-MOCVD) system for GaN, InGaN and AlGaN deposition processes. In this unique system, having a plasma source N₂ is used instead of NH₃ for growing nitrides thus eliminating abatment of NH₃ and lowering H₂ content in the films. Plasma enhancement via RF showerhead plasma source also allows lower deposition temperatures (600°C versus 1100°C) making it possible to offer this process in a table top system.

Higher throughput for manufacturing can be achieved through clustering.

• Table top system
  

  Planar ICP Source

• 10″ SS chamber
• RF plasma source with shower head gas distribution
• Auto tuner
• 4″ Substrate holder, heated up to 900°C
• Five bubblers with individual cooling/heating baths
• Heated gas lines
• Additional MFC’s
• 250l/s turbomolecular pumping package
• 5×10^-7 torr base pressure
• Fully automated PC based, recipe driven
• LabVIEW user interface
• EMO protection and safety interlocks

Options

• Stand alone system
  

  RF Plasma Source with Shower Head Gas Distribution

• ICP or microwave plasma source
• 14″ SS electropolished cubical chamber
• 8″ or 12″ substrate holder
• 700°C rotating substrate holder for 6″ platen and 950°C for 4″ platen
• Additional Bubblers and MFCs
• Auto Load/Unload
• Cluster configuration compatibility

Applications:

• III-V Semiconductor layers
• Blue LEDs
• Laser Diodes
• InN Nanorods in UV-Vis-IR optoelectronics
• MoS₂, BN and Graphene in 3D and 2D materials

Research Article: Effect of temperature and V/III ratio on the initial growth of indium nitride using plasma-assisted metal-organic chemical vapor deposition.