Description
Oxford Instruments 80 Plus RIE Compact Plasma Reactive Ion Etching System
The vacuum chamber is configured for optimal gas conductance at the wafer thus maximizing etch rate and uniformity.
All parameters controlled via front panel display.
9 in. dia. platen.
Previously used with four MFC and gases used were CF4, O2, CHF3, AR.
Does not have turbo pump option installed.
Includes vacuum pump.
208V, 3 Ph, 60 Hz.
SS251801994048
