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LPCVD Furnace

Low pressure CVD/Furnace System

  • Substrate Size: up to 10 inch
  • Vacuum 10-7 torr range base pressure
  • Thickness uniformity : ±5%
  • Substrate temperature up to 1700 °C
  • Full auto control with touch screen display
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Description

LPCVD Furnace System (Low pressure CVD/Furnace System) Applications 
  • LPCVD
  • Annealing
  • Diffusion
  • Oxidation

LPCVD Furnace System(Low pressure CVD/Furnace System) Options

  • Chamber material : Quartz、Al2O3、Graphite
  • Furnace type: Horizontal, Vertical
  • Maximum Temperature : 1100℃、1300 ℃、1500 ℃、 1700 ℃
  • OES or RGA systems.
  • Load-Lock System(single substrate, cassette-to-cassette)
  • Cluster able for vacuum transfer of substrates

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