Main Maker

E-Beam Evaporate

  • Substrate Size: up to 12”( wafer) or 470 x 370 mm2 (glass)
  • Single wafer or multi wafers(2”x32 pcs, 4”x16pcs, 6”x6pcs, 8”x4pcs)
  • Thickness uniformity:< 3%
  • <10-10 Torr Ultimate vacuum
  • Substrate heating up to 800˚C
  • HV and UHV available
  • Custom Design available
  • Fully Safety Interlocked
  • Full automatic control system with touch screen display
  • Real time record system data (pressure, substrate temperature, deposition rate)
  • Real time process control to provide precise film quality and film reliability
  • Full auto control with touch screen display
  • Multiple levels of access with password protection
  • Co-deposition
  • Multiple sources with sequential operation
  • Quartz crystal monitor for closed loop thickness control
  • PC-base control real time record chamber data (Pressure, substrate temperature, deposition rate)
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Description

E-Beam Evaporate System Applications

  • LIFT-OFF process
  • Optoelectronic Material (LED/Laser Diode)
  • Communication Device
  • Semiconductor Device

E-Beam Evaporate System Options

  • Choice of Turbo/Cryo/Diffusion Pump available
  • Crucible select (1/2/4/6)
  • Load-Lock System
  • Substrate cooling
  • Substrate tilt
  • Substrate heating available 300C, 500C, 800C
  • Connect with Glove box

 

 

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