Main Maker

Atomic Layer Deposition

  • Substrate Size: up to 300 mm
  • Thickness uniformity < 1%
  • Precursor Sources: Up to 6 precursors
  • Substrate temperature: 800 ˚C
  • Direct and remote capacitive coupled plasma (CCP)
  • File material: Oxide/Nitride/Metal
  • Full auto control with touch screen display
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Description

Atomic Layer Deposition System Applications
  • High-k gate oxides
  • passivation layers for OLED
  • Passivation of crystal silicon solar cells
  • Nano-electronics
  • Coating of nanoporous structures

Atomic Layer Deposition System Options

  • Integrate with glove box
  • substrate heater up to 800 ˚C
  • High vacuum pumping system
  • Load-Lock System
  • Connect with Glove box
  • Cluster able for vacuum transfer of substrates

 

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