Top

Navigation

You are here: Home > Products > Nanotechnology Equipment
Awaiting product image

Nanotechnology Equipment

Nanotechnology Equipment

Category:

Description

Please contact us if you are interested in the Nanotechnology Equipment . The Nanotechnology Equipment is only for end users and are subject to prior sale without notice. Appreciate your time.

  1. 4-Pt Probe
  2. Airco Temescal FC-1800  Evaporator
  3. Airco Temescal FC-1800 Evaporator
  4. Alcatel Deep Reactive Ion Etch, Gases : SF6, C4F8, CF4, Ar, O2, Standard Etches : Si, Glass, SiO2, Samples : 1 – 6″ Wafer or Equivalent Area
  5. AMAT AMP-3300 PECVD
  6. Anechoic Chamber, This anechoic chamber provides a low reflection environment to measure antenna radiation pattern, gain, and reflection coefficient from 0.7 – 18 GHz.  It can also serve a shielded room for wireless testing
  7. Branson IPC 3000
  8. Branson/IPC 3000
  9. Branson/IPC 4150
  10. CVC Products AST-601 Sputter
  11. Dektak D150 Contact Profilometer, Tip Size : 12.5um Radius Inverted Cone, Samples : Pieces – 8″ Wafer, Step Height Range : 100A – 1mm, Stress Measurement : 2″ – 8″ Wafers
  12. Differential Scanning Calorimeter (DSC), Measurement of specific heat, heat of reactions, and phase transition temperatures from 30 to 1500C.
  13. EG 1034
  14. EG 2001X with NAVITAR
  15. EG4085
  16. Gasonics Aura 2000LL
  17. Gasonics L3500
  18. Gasonics L3510
  19. GCA 5X Reduction i-line Stepper, Minimum Feature Sizes : 0.6um, Registration better than 500nm, Samples : 10mm Pieces – 6″ Wafer (Minimum Sample Thickness 350um)
  20. Glovebox , Box Conditions: N2; <0.1ppm H2O; <0.1ppm O2, Integrated Spinner, RH Evaporator, 3 Source Locations, Standard Source Boats W, Supplied Materials : Al, Mg, MgF, LiF, CuS, Cu, Ni, Ti, Au, Ag
  21. Heatpulse 210
  22. Heatpulse 4100
  23. Heatpulse 4108
  24. Heatpulse 610
  25. Heatpulse 610
  26. Heatpulse 8108
  27. Heatpulse 8800
  28. Heidelberg uP-101 Direct Write Lithography, Minimum Feature Sizes : 0.8um, Samples : Pieces to 6″ x 6″ Sample, 375nm UV Diode Laser for Positive and Negative Photoresists including SU8, Mask Writing for MA6 and GCA, Grayscale Exposure Mode 3D Lithography
  29. HP 4062 and Testers
  30. HP 4156A Precision Semiconductor Parameter Analyzer
  31. HP 4280A 1MHz C Meter/ C-V Plotter
  32. HP 54520A 500MSa/s 500MHz Oscilloscope
  33. HP 6623A System DC Power Supply
  34. Kurt J Lesker Dual Thermo Evaporator
  35. Lam Auto Etch 590
  36. Lam AutoEtch 590
  37. Lam Rainbow 4728
  38. Laser Flash, Measurement of the in-plane and cross-plane thermal diffusivity of bulk samples from -120 to 1500C.
  39. LSR, Simultaneous measurement of the Seebeck Coefficient and electrical conductivity of bulk and thin films (in-plane) from -120 to 1500C.
  40. Matrix 105
  41. Matrix 205
  42. Matrix 302
  43. Matrix 303
  44. Matrix Bobcat 209S
  45. Matrix Bobcat 209S
  46. Matrix System One Stripper
  47. Mini-Pulse 310
  48. MRC 603 MRC 693 TES-600 Sputter
  49. MRC 603 Sputter
  50. MRC 603 Sputter
  51. MRC 643 Sputter
  52. Multiplex ICP MACS
  53. Nanometrics
  54. Nanometrics 210 Nanospec AFT
  55. Olympus MX50A-F with Al100-L6
  56. Oxford Chlorine Etcher, Gases : BCl3, Cl2, SF6, O2, Ar, N2, Standard Etches : GaN, AlGaN, Samples : 1 – 6″ Wafer or Equivalent Area
  57. Oxford NGP80 RIE, Gases: CF4, CHF3, C2F6, SF6, Ar, O2, Standard Etches : SiO2, Si3N4, Glass, Si, and SiC, Samples : 1 – 4″ Wafer or Equivalent Area
  58. Perkin-Elmer 4400 Sputter
  59. Perkin-Elmer 4400 Sputter
  60. Plasma Therm 700
  61. Plasma Therm 700 Plasma Etch&PECVD
  62. Plasmalab CVD-2
  63. Plasmatherm 790
  64. Plasmatherm SLR 720
  65. Raith150 Two Ebeam Lithography, Minimum Feature Sizes : 10-20nm, Samples : Pieces – 6″ Wafers, Low kV Exposure and Imaging with Inlens SE Detector with BSE Detector Option, Accelerating Voltage up to 30kV,20 MHz Digital Pattern Generator, Stitching and Overaly Accuracy about 35nm
  66. RTP-3000
  67. Semigroup, Gases : CHF3, SF6, Ar, O2, Standard Etches : SiO2, Si3N4, Poly-Si, SiC, Samples : 1 – 6″ Wafer or Equivalent Area
  68. STS MESC Multiplex ICP
  69. STS multi-chamber Cluster
  70. STS Multiplex DRIE
  71. STS Multiplex ICP
  72. STS Mutiplex ICP
  73. STS PRO ICP Etcher
  74. Suss MA6/BA6 Contact Aligner, Minimum Feature Sizes :2um, Samples : 10mm Pieces to 1-6″ Wafer (Thickness 200um to 4mm), Front Side and Back Side Alignment, Mask Holders : 4″, 5″, and 7″, Sample Holders : 3″ Vac Chuck, 4″ Vac Chuck, 4″ Wafer, and 6″ Wafer, Modes : Flood, Proximity, Soft, Hard, and Vac Contact
  75. Tegal 903e Plasma Etch
  76. Tegal 903e Plasma Etch
  77. Tegal 903e Plasma Etch
  78. Temescal BJD-1800 Sputter
  79. Temescal FC-1800  Evaporator
  80. Temescal FC-1800  Evaporator
  81. Temescal FC-1800 Evaporation
  82. Thermal Oxidation, Steam Oxidation : Samples : 2″ – 6″ Wafers, Gases : N2, O2, H2, HCl, Temperatures : 950C and 1050C, Oxide Thickness Maximum : 1um
  83. Thermal Oxidation,Anneal: Forming Gas N2/H2, Drive-In Anneal
  84. Thermal Oxidation,Doping: Phosphorus Doping
  85. Thermal Oxidation,Doping: Boron Doping
  86. Thermal Oxidation,Dry Oxidation: Samples : 2″ – 6″ Wafers, Gases : N2, O2, HCl, Temperatures : 850C, 950C, 1000C, 1100C, Oxide Thickness Maximum : 300nm
  87. Trion Etcher, Gases : BCl3, Cl2, CF4, O2, Ar, N2, Standard Etches : GaAs, GaN, Poly-Si, Al, Samples : 1 – 4″ Wafer or Equivalent Area
  88. Varian 3118 E-Beam Thermal Evaporator
  89. Vase Ellipsometer, Multi-Angle Capable System
  90. Wyko NT9100 Optical Profilometer, White Light and Green Light Measurements, Samples : Pieces – 6″ Wafer, Surface Mapping and Characterization

Please contact us for more information on the product:

[dynamichidden dynamichidden-813 "CF7_URL"]

Your Name*:

Your Email:

Your Message:

Captchac Codecaptcha

Submit:

ss380snfss5289

All used equipment /parts trademarks belongs to the original equipment manufacturer. All rights reserved. 

Share the post "Nanotechnology Equipment"

  • Facebook
  • X

Related products

The trademarks of the equipment and parts contained in this website belonged to the Original Equipment Manufacturers