Description
GaAs Wafers – Gallium Arsenide
Note: Surface – P = Polished, E = Etched, C = AsCut, Ox = Oxide (on that layer), GaAs – Gallium Arsenide
Note: Please email us to check the availability , price and lead time etc.
| Item | Material | Orient. | Diam | Thck | Surf. | Resistivity | Nc | Mobil | EPD | Comment |
| (mm) | (μm) | Ωcm | a/cm3 | cm2/Vs | /cm2 | |||||
| 1 | undoped SI GaAs:- | [100] | 4″ | 625 | P/P | >/=1E7 | 2 Flats Epi-ready | |||
| 2 | undoped SI GaAs:- | [100] | 4″ | 1,000 | P/P | n-type >1E7 | <5,000 | VGF; US Flats; Epi Ready | ||
| 3 | undoped SI GaAs:- | [100] | 4″ | 625 | P/P | n-type >1E7 | <5,000 | VGF; US Flats; Epi Ready | ||
| 4 | undoped SI GaAs:- | [100] | 2″ | 5,000 | P/E | n-type 4E7 | Epi Ready | |||
| 5 | undoped SI GaAs:- | [100] | 2″ | 380 | P/E | n-type >1E8 | >5,000 | <2,000 | VGF; US Flats; Epi Ready | |
| 6 | undoped SI GaAs:- | [100] | 2″ | 400 | BROKEN | n-type 6.48E7 | 1.70E+07 | 5,670 | <7.3E4 | Shattered in many pieces |
| 7 | undoped SI GaAs:- | [100] | 2″ | 400 | P/E | n-type 0.51 | 2.51E+15 | 4,900 | <6.8E4 | SEMI Flats; Epi Ready |
| 8 | undoped SI GaAs:- | [111B] ±0.5° | 2″ | 400 | P/P | n-type 7.5E7 | 1.70E+07 | 5,010 | <8E4 | EJ Flats; Epi Ready |
| 9 | n-type GaAs:Si | [100] | 1″ | 500 | BROKEN | NO Flats | ||||
| 10 | n-type GaAs:Si | [100] | 1″ | 500 | P/E | <5,000 | NO Flats; Epi Ready Cassette of 49 wafers between tissue paper | |||
| 11 | n-type GaAs:Si | [100] | 1″ | 500 | P/E | <5,000 | VGF; NO Flats; Epi Ready Cassettes of 5 wafers | |||
| 12 | n-type GaAs:Te | [111B] | 2″ | 385 | P/P | 9.30E-04 | 2.80E+18 | 2,400 | <5E4 | Epi Ready |
| 13 | p-type GaAs:Zn | [110] | 2″ | 400 | P/E | 0.19 | 1.35E+17 | 235 | <5E4 | 1 Flat @[1-10]; Epi Ready |
| 14 | p-type GaAs:Zn | [111A] | 2″ | 400 | BROKEN | 0.8 | 6.00E+16 | 163 | <6.1E4 | |
| 15 | p-type GaAs:Zn | [111B] ±0.5° | 2″ | 400 | P/E | 0.0846-0.1430 | (2.12-4.08)E17 | 180-205 | <5.7E4 | SEMI Flats; Primary @ (110), Secondary @ (112); Epi Ready |
| 16 | p-type GaAs:Zn | [111B] ±0.5° | 2″ | 400 | BROKEN | 0.0846-0.1430 | (2.12-4.08)E17 | 180-205 | <5.7E4 | |
| 17 | undoped SI GaAs:- | [100-4° towards[111A]] | 51.3mm | 380 | P/E | n-type 7.4E7 | 1.70E+07 | 5,000 | <8E4 | SEMI Flats; Epi Ready |
| 18 | undoped SI GaAs:- | [100-1° towards[111A]] | 2″ | 350 | P/P | n-type 8.7E7 | 1.30E+07 | 5,380 | <7.8E4 | SEMI Flats; Epi Ready |
| 19 | undoped SI GaAs:- | [100-1° towards[111A]] | 2″ | 375 | P/P | n-type 8.7E7 | 1.30E+07 | 5,380 | <7.8E4 | SEMI Flats; Epi Ready |
| 20 | undoped SI GaAs:- | [100] | 2″ | 400 | P/E | n-type 6.9E7 | 1.70E+07 | 5,250 | <7.3E4 | SEMI Flats; Epi Ready |
| 21 | undoped SI GaAs:- | [100] | 2″ | 5,000 | P/E | n-type 4E7 | 2.70E+07 | 5,700 | <5.3E4 | SEMI Flats; Epi Ready |
| 22 | undoped SI GaAs:- | [100-6° towards[111A]] | 2″ | 400 | P/E | n-type 2.5E7 | 4.80E+07 | 5,000 | <5E4 | Epi Ready |
| 23 | undoped SI GaAs:- | [100] | 2″ | 400 | P/P | n-type 0.61 | 2.90E+15 | 3,535 | <5E4 | SEMI Flats; Epi Ready |
| 24 | undoped SI GaAs:- | [100] | 2″ | 400 | P/E | n-type 1.6 | 3.45E+15 | 1,200 | <5.8E4 | SEMI Flats; Epi Ready |
| 25 | undoped SI GaAs:- | [110] | 2″ | 400 | P/E | n-type 7.3E7 | 1.10E+07 | 4,940 | <10,000 | SEMI; 2 Flats: Primary @(110), Secondary @(100); Epi Ready |
| 26 | undoped SI GaAs:- | [111B] | 2″ | 400 | P/E | n-type 6.4E7 | 2.30E+07 | 4,230 | <8E4 | EJ Flats; Epi Ready |
| 27 | n-type GaAs:Te | [111B] | 2″ | 400 | P/E | 1.10E-03 | 2.58E+18 | 2,430 | <5E4 | SEMI Flats, Primary @ (110) & Secondary @ (112); Epi Ready |
| 28 | p-type GaAs:Zn | [111B] | 2″ | 400 | P/E | 0.11 | 2.90E+17 | 190-216 | <5.7E4 | SEMI Flats; Epi Ready |
