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2″ Si Wafers (2 inch Si wafers)

2″ Si Wafers (2 inch Si wafers), Surface – P = Polished, E = Etched, C = AsCut, Ox = Oxide (on that layer); Material – CZ unless noted, Items sold in quantities of 25, unless noted. Please email us to check the availability , price and  lead time etc.

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2″ Si Wafers (2 inch Si wafers)

Note: Surface – P = Polished, E = Etched, C = AsCut, Ox = Oxide (on that layer); Material – CZ unless noted

Note: Items sold in quantities of 25, unless noted. Please email us to check the availability , price and  lead time etc.

Item Material Orient. Diam Thck Surf. Resistivity Comment
(mm) (μm) Ωcm
1  P/B [100] 2″ 280um P/E 0-100 ohm-cm Test Grade with flat
2  N/Ph [100] 2″ 280um P/E 0-100 ohm-cm Test Grade with flat
3 P/B [100] 2″ 280um P/E 1-10 ohm-cm Prime Grade with Flat
4 N/Ph [100] 2″ 280um P/E 1-10 ohm-cm Prime Grade with Flat
5 P/B [100] 2″ 280um P/E 0.001-0.005 ohm-cm Prime Grade with Flat
6 P/B [111] 2″ 280um P/E 1-10 ohm-cm Prime Grade with Flat
7 P/B [111] 2″ 280um P/E 0.001-0.005 ohm-cm Prime Grade with Flat
8 N/As [100] 2″ 280um P/E 0.001-0.005 ohm-cm Test Grade with flat
9 P/B [100] 2″ 280um P/E 1-20 ohm-cm Test Grade with flat
10 Undoped [100] 2″ 280um P/P >10,000 ohm-cm Prime Grade
11 p-type Si:B [100] 2″ 500 P/P FZ 6,000–10,000 SEMI Prime, 2Flats, hard cst
12 p-type Si:B [100] 2″ 300 ±15 P/P FZ 3,000–4,000 SEMI Test (Bad back–side, with scratches & edge chips, 1Flat, hard cst, TTV<7μm
13 p-type Si:B [100] 2″ 400 P/P FZ 3,000–4,000 2Flats (180 ° from the Primary), hard cst
14 p-type Si:B [100] 2″ 1,600 P/E FZ >3,000 SEMI Prime, 2Flats, Empak cst
15 p-type Si:B [100] 2″ 300 ±10 P/E FZ 2,800–3,300 SEMI Prime, 1Flat, hard cst, TTV<7μm
16 p-type Si:B [100] 2″ 300 P/E FZ 2,800–3,300 SEMI Prime, 1Flat, hard cst, TTV<7μm
17 p-type Si:B [100] 2″ 300 ±10 P/E FZ 2,800–3,300 SEMI Prime, 1Flat, hard cst, TTV<7μm
18 p-type Si:B [100] 2″ 280 P/E FZ >1,000 SEMI Prime, 2Flats, hard cst
19 p-type Si:B [100] 2″ 280 P/P FZ >100 SEMI, 2Flats, in hard cassettes of 3 and 12 wafers
20 p-type Si:B [100] 2″ 275 P/P FZ 1–10 SEMI Prime, 1Flat, hard cst
21 p-type Si:B [111] ±0.5° 2″ 500 P/P FZ 5,000–6,500 SEMI Test (in unsealed cassette), 1Flat
22 p-type Si:B [111] ±0.5° 2″ 275 P/E FZ 3,000–5,000 {3,500–5,600} SEMI Prime, 1Flat, Lifetime>2,000μs, in hard cassettes of 5 wafers
23 p-type Si:B [111] ±0.5° 2″ 275 P/E FZ 3,000–5,000 SEMI Prime, 1Flat, Lifetime>2,000μs, in hard cassettes of 5 wafers
24 p-type Si:B [111–7° towards[110]] ±0.5° 2″ 279 P/P FZ >2,000 SEMI Prime, 1Flat, hard cst
25 p-type Si:B [111] ±0.5° 2″ 331 P/E FZ 2,000–5,000 SEMI, Soft cst
26 p-type Si:B [111] ±0.5° 2″ 331 P/E FZ 2,000–5,000 SEMI TEST (Scratched), Soft cst
27 p-type Si:B [111] ±0.5° 2″ 331 P/E FZ 2,000–5,000 SEMI Prime, in Soft cassettes of 4 wafers
28 p-type Si:B [111] 2″ 381 P/E FZ 2,000–5,000 SEMI TEST (Wafers scratched and cannot be recleaned), hard cst
29 p-type Si:B [111] ±0.5° 2″ 280 ±15 P/E FZ >1,000 SEMI, 2Flats, hard cst
30 p-type Si:B [111] ±0.5° 2″ 275 P/P FZ 1–10 SEMI Prime, 1Flat, hard cst
31 n-type Si:P [110] ±1° 2″ 525 P/E FZ 5,000–10,000 SEMI Prime, Lifetime>1,000μs, Primary Flat @ [111]±0.5°, Secondary Flat @ [111] 70.5° CW from Primary, in hard cassettes of 7, 8 & 8 wafers
32 n-type Si:P [110] ±1° 2″ 525 P/E FZ 5,000–10,000 SEMI Prime, Lifetime>1,000μs, Primary Flat @ [111]±0.5°, Secondary @ [111] 70.5° CW from Primary
33 n-type Si:P [110] ±0.5° 2″ 400 P/E FZ 4,000–20,000 SEMI, 1Flat, hard cst, Lifetime>1,000μs
34 n-type Si:P [110] 2″ 900 P/E FZ 130–350 SEMI Prime, 1Flat, hard cst
35 n-type Si:P [110] ±0.5° 2″ 900 P/E FZ 50–100 SEMI Prime, hard cst, Primary Flat only at [111]±0.5°
36 n-type Si:P [100] 2″ 300 P/E FZ 5,000–8,000 SEMI Prime, 2Flats, hard cst
37 n-type Si:P [100] 2″ 430 P/E FZ >5,000 Prime, hard cst, TTV<5μm
38 n-type Si:P [100] 2″ 325 P/P FZ >3,000 SEMI Prime, 2Flats, hard cst
39 n-type Si:P [100] 2″ 325 P/P FZ >3,000 SEMI Prime, 2Flats, hard cst
40 n-type Si:P [100] 2″ 325 P/E FZ >3,000 SEMI Prime, 2Flats
41 n-type Si:P [100] 2″ 300 P/E FZ >600 SEMI Prime, 2Flats, hard cst
42 n-type Si:P [100] 2″ 300 P/E FZ >600 {1,400–2,000} SEMI Prime, 2Flats, hard cst
43 n-type Si:P [100] 2″ 200 P/P FZ 500–1,000 SEMI, 2Flats, in hard ccassettes of 4, 5 & 5 wafers
44 n-type Si:P [100] 2″ 500 P/P FZ >200 SEMI Prime, 2Flats, hard cst
45 n-type Si:P [100] 2″ 225 P/P FZ >100 SEMI, 2Flats, Individual cst, 1 very deep scratch
46 n-type Si:P [100] 2″ 280 P/E FZ 60–90 SEMI Prime, 1Flat, hard cst
47 n-type Si:P [100] 2″ 300 P/P FZ 0.9–10.0 SEMI, 2Flats, hard cst
48 n-type Si:P [111–3.5° towards[110]] ±0.5° 2″ 279 ±15 P/E FZ >2,000 SEMI Prime, 1Flat, hard cst
49 n-type Si:P [111] ±0.5° 2″ 280 P/P FZ 2,000–4,000 SEMI Prime, 1Flat, hard cst, TTV<5μm, Both–sides Epi–Ready
50 n-type Si:P [111] ±0.5° 2″ 280 P/P FZ 2,000–4,000 SEMI Prime, 1Flat, hard cst, TTV<5μm
51 n-type Si:P [111] ±0.5° 2″ 280 P/P FZ 2,000–4,000 SEMI Prime, 1Flat, hard cst
52 n-type Si:P [111] ±0.5° 2″ 300 P/P FZ 2,000–4,000 SEMI Prime, 2Flats, hard cst
53 n-type Si:P [111] ±0.5° 2″ 500 P/P FZ 650–1,000 {660–900} SEMI, 2Flats, in hard cassettes of 8 wafers
54 n-type Si:P [111] ±0.5° 2″ 500 P/P FZ 300–1,000 SEMI Prime, 2Flats, hard cst
55 n-type Si:P [111] ±0.5° 2″ 500 P/P FZ 10–55 SEMI Prime, 2Flats, hard cst
56 Intrinsic Si:- [110] ±0.5° 2″ 275 P/E FZ >20,000 SEMI Prime, 1Flat, hard cst
57 Intrinsic Si:- [110] ±0.5° 2″ 275 P/E FZ >20,000 SEMI Prime, 1Flat, hard cst
58 Intrinsic Si:- [100] 2″ 280 P/P FZ >20,000 SEMI Prime, 1Flat, hard cst
59 Intrinsic Si:- [100] 2″ 280 P/E FZ >20,000 SEMI Prime, 1Flat, hard cst
60 Intrinsic Si:- [100] 2″ 280 P/E FZ >20,000 SEMI Prime, 1Flat, hard cst, 5 Prime wafers, 8 wafers with up to 2 scratches each
61 Intrinsic Si:- [100] 2″ 200 P/P FZ >10,000 SEMI Prime, 1Flat, hard cst
62 Intrinsic Si:- [100] 2″ 280 ±10 P/P FZ >10,000 SEMI Prime, 2Flats, hard cst, TTV<2μm, Bow<15μm, Warp<20μm
63 Intrinsic Si:- [100] 2″ 280 ±10 P/P FZ >10,000 SEMI Prime, 2Flats, hard cst, TTV<3μm, Bow<10μm, Warp<10μm
64 Intrinsic Si:- [100] 2″ 500 P/P FZ >10,000 SEMI Prime, 1Flat, hard cst
65 Intrinsic Si:- [100] 2″ 500 P/E FZ >10,000 SEMI Prime, 2Flats, in hard cassettes of 7, 8 & 8 wafers
66 Intrinsic Si:- [100] 2″ 280 ±10 P/E FZ >8,500 SEMI Prime, 1Flat, TTV<5μm, hard cst
67 Intrinsic Si:- [100] 2″ 300 P/E FZ 5,000–10,000 SEMI Prime, 1Flat, hard cst
68 Intrinsic Si:- [100] 2″ 300 P/E FZ 5,000–10,000 SEMI Prime, 1Flat, in hard cassettes of 2 & 5 wafers
69 Intrinsic Si:- [100] 2″ 300 P/E FZ 5,000–8,000 SEMI Prime, 2Flats, hard cst
70 Intrinsic Si:- [111] ±0.5° 2″ 300 P/E FZ 15,000–20,000 SEMI Prime, 2Flats, TTV<5μm, Bow/Warp<25μm, hard cst
71 Intrinsic Si:- [113] ±0.5° 2″ 300 P/P FZ >10,000 SEMI Prime, 1Flat, hard cst
72 p-type Si:B [110] ±0.5° 2″ 300 P/E 5–10 SEMI Prime, 1Flat 16mm @ <1,–1,0>±1°, hard cst.
73 p-type Si:B [110] ±0.5° 2″ 300 P/E 5–10 SEMI Prime, 1Flat 16mm @ <1,–1,0>±1°, hard cst
74 p-type Si:B [110–1° towards[111A]] ±0.5° 2″ 254 P/E 0.05–0.07 SEMI Prime, 2Flats, hard cst, TTV<5μm
75 p-type Si:B [100] 2″ 300 P/P 10–20 SEMI Prime, 2Flats, hard cst
76 p-type Si:B [100] 2″ 300 P/E 5–10 SEMI, 1Flat, in hard cassettes of 1, 2, 3 & 3 wafers
77 p-type Si:B [100] 2″ 300 P/E 5–10 SEMI Prime, 1Flat, hard cst
78 p-type Si:B [100] 2″ 500 P/E 5–10 SEMI Prime, 2Flats, hard cst
79 p-type Si:B [100] 2″ 250 P/P 1–5 SEMI Prime, 1Flat, hard cst
80 p-type Si:B [100] 40mm 250 P/E 1–100 SEMI Prime, 1Flat, Soft cst
81 p-type Si:B [100] 2″ 275 P/E 1–10 SEMI, 1Flat, hard cst
82 p-type Si:B [100] 2″ 280 P/P 1–5 SEMI Prime, 2Flats, hard cst
83 p-type Si:B [100–6°] 2″ 300 P/E 1–5 SEMI Prime, 2Flats, hard cst
84 p-type Si:Ga [100] 2″ 350 P/P 1–5 SEMI Prime, 2Flats, hard cst
85 p-type Si:Ga [100] 2″ 350 P/P 1–5 SEMI Prime, 2Flats, hard cst
86 p-type Si:B [100] 2″ 380 P/E 1–100 SEMI Prime, 2Flats, hard cst
87 p-type Si:B [100] 2″ 775 P/P 1–30 {9.0–11.9} SEMI Prime, 2Flats, hard cst
88 p-type Si:B [100] 2″ 275 P/E 0.5–1.0 SEMI, 1Flat, hard cst
89 p-type Si:B [100] 2″ 3,150 C/C >0.5 1Flat
90 p-type Si:B [100] 2″ 280 P/P 0.4–0.6 SEMI Prime, 2Flats, hard cst
91 p-type Si:B [100] 2″ 275 P/E 0.2–0.4 SEMI Prime, 2Flats, hard cst
92 p-type Si:B [100] 2″ 279 P/P 0.08–0.12 SEMI Prime, 1Flat, hard cst
93 p-type Si:B [100] 2″ 250 P/P 0.01–0.02 SEMI Prime, 2Flats, hard cst, TTV<5μm
94 p-type Si:B [100] 2″ 300 P/E 0.01–0.02 SEMI, 2Flats, hard cst
95 p-type Si:B [100] 2″ 600 P/E 0.01–0.05 SEMI Prime, 2Flats, hard cst
96 p-type Si:B [100] ±1° 2″ 1,000 P/E 0.01–100.00 SEMI Prime, 2Flats, hard cst
97 p-type Si:B [100] 2″ 300 P/E 0.001–0.005 SEMI Prime, 2Flats, hard cst
98 p-type Si:B [100] 2″ 300 P/E 0.001–0.005 SEMI Prime, 2Flats, hard cst
99 p-type Si:B [100] 2″ 300 P/E 0.001–0.005 SEMI Test, 2Flats, hard cst contaminated by broken wafer, needs cleaning
100 p-type Si:B [100] 2″ P/E SEMI Prime, hard cst
101 p-type Si:B [100] 2″ 420 P/P <0.005 SEMI, 1 Flat, hard cst, Striation rings visible
102 p-type Si:B [100] 2″ 525 P/P <0.01 {0.0076–0.0078} SEMI Prime, 2Flats, in hard cassettes of 5 wafers.
103 p-type Si:B [111] ±0.5° 2″ 330 P/E 1–20 SEMI Prime, 1Flat, hard cst
104 p-type Si:B [111] ±0.5° 2″ 330 P/E 1–20 SEMI Prime, 1Flat, hard cst
105 p-type Si:B [111] ±0.5° 2″ 330 P/E 1–20 SEMI Prime, 1Flat, hard cst
106 p-type Si:B [111] ±0.5° 2″ 425 P/P 1–4 {2.8–3.1} SEMI Test, 1Flat, hard cst, Dirty, can be recleaned and polished for additional fee
107 p-type Si:B [111] ±0.5° 2″ 430 P/E 1–10 SEMI Prime, 1Flat, hard cst
108 p-type Si:B [111] ±0.5° 2″ 500 P/E 1–4 SEMI, 1Flat
109 p-type Si:B [111–10° towards[112]] 2″ 280 P/E 0.5–0.6 SEMI Prime, 1Flat, hard cst
110 p-type Si:B [111] ±0.5° 2″ 275 P/P 0.1–0.3 SEMI Prime, 1Flat, hard cst
111 p-type Si:B [111] ±0.5° 2″ 280 P/E 0.1–1.0 SEMI Prime, 1Flat, hard cst
112 p-type Si:B [111] ±0.5° 2″ 500 P/P 0.1–0.3 SEMI Prime, 1Flat, hard cst
113 p-type Si:B [111] ±0.5° 2″ 280 P/E 0.003–0.005 SEMI, 1Flat, hard cst
114 p-type Si:B [111] 2″ 500 P/P 0.003–0.005 Prime, 2 Flats (2nd @ 45°), hard cst
115 p-type Si:B [111] 2″ 280 P/E 0.001–0.005 SEMI Prime, 1Flat, hard cst
116 p-type Si:B [111] 2″ 1,000 P/E 0.001–0.005 SEMI Prime, 1Flat, hard cst
117 p-type Si:B [111] ±0.5° 2″ 500 P/P <0.01 SEMI Prime, hard cst
118 p-type Si:Ga Poly. 2″ C/C 0.024–0.036 Gallium doped Concentrate (each with measured Gallium content)
119 n-type Si:P [110] ±0.5° 2″ 254 P/E 1.2–1.6 SEMI Prime, 2Flats, hard cst, TTV<5μm
120 n-type Si:P [110] ±0.5° 2″ 300 BROKEN 1–10 Broken P/E wafers, Primary Flat @ [111]±1.0°, Secondary @ [111] 70.5° CW from Primary
121 n-type Si:P [100] 50mm 280 P/E 130–280 SEMI Prime, 2Flats, hard cst
122 n-type Si:P [100] 50mm 280 P/E 130–280 SEMI TEST (2 scratched, 2 with pits, 2Flats, hard cst
123 n-type Si:P [100] 2″ 275 P/P 40–100 SEMI Prime, 2Flats, hard cst
124 n-type Si:P [100] 2″ 300 P/P 33–48 SEMI TEST — Some wafers have scratches, 2Flats, hard cst
125 n-type Si:P [100] 2″ 150 P/P 20–40 SEMI Prime, 2Flats, hard cst
126 n-type Si:P [100] 2″ 300 P/P 10–30 SEMI Prime, 1Flat, hard cst
127 n-type Si:P [100] 2″ 300 P/P 10–30 SEMI, 1Flat, hard cst
128 n-type Si:P [100] 2″ 300 P/P 10–30 SEMI, 1Flat, hard cst
129 n-type Si:P [100] 2″ 500 P/P 5–10 SEMI Prime, 2Flats, hard cst
130 n-type Si:P [100] 2″ 500 P/P 5–10 {6.0–6.5} SEMI Prime, 2Flats, hard cst
131 n-type Si:P [100] 2″ 280 P/E 3–9 SEMI Test, 1Flat, hard cst, Broken wafer removed from cassette
132 n-type Si:P [100] 2″ 280 P/P 1–5 SEMI Prime, 2Flats, hard cst
133 n-type Si:P [100] 2″ 280 P/E 1–10 SEMI Prime, 1Flat, hard cst
134 n-type Si:P [100] 2″ 350 P/P 1–50 Test, Polished but dirty and scratched. Can be re–polished for additional fee, NO Flats, hard cst
135 n-type Si:P [100] ±1° 2″ 400 ±15 P/P 1–10 SEMI Prime, 1Flat, TTV<3μm, Empak cst
136 n-type Si:P [100] 2″ 3,000 P/E 1–50 SEMI, 1Flat, Individual cst
137 n-type Si:P [100] 2″ 5,000 P/E 1–100 SEMI Prime, 2Flats, Individual cst, In groups of 8 wafers
138 n-type Si:P [100] ±1.0° 2″ 6,000 P/E 1–10 SEMI Prime, 2Flats, Individual cst
139 n-type Si:P [100] 2″ 300 P/P 0.8–1.0 SEMI Prime, 2Flats, hard cst
140 n-type Si:Sb [100] 2″ 300 P/E 0.01–0.02 SEMI Prime, 2Flats, hard cst
141 n-type Si:Sb [100] 2″ 500 P/P 0.01–0.02 SEMI Prime, 2Flats, in hard cassettes of 5 wafers
142 n-type Si:As [100] 2″ 7,050 P/E 0.0031–0.0038 SEMI Prime, 2Flats, Individual cst Group of 2 wafers
143 n-type Si:As [100] 2″ 300 P/E 0.003–0.004 SEMI Prime, 2Flats, hard cst
144 n-type Si:As [100] 2″ 200 ±10 P/P 0.001–0.005 SEMI Prime, 2Flats, hard cst
145 n-type Si:As [100] 2″ 300 P/P 0.001–0.005 SEMI Prime, 2Flats, hard cst
146 n-type Si:As [100] 2″ 300 P/P 0.001–0.005 SEMI Prime, 2Flats, hard cst
147 n-type Si:As [100] 2″ 300 P/E 0.001–0.005 {0.0033–0.0037} SEMI, 2Flats, in hard cassettes of 7 wafers
148 n-type Si:As [100] 2″ 300 P/E 0.001–0.005 SEMI Prime, 2Flats, hard cst
149 n-type Si:As [100] 2″ 300 P/E 0.001–0.005 SEMI Prime, 2Flats, hard cst
150 n-type Si:As [100] 2″ 420 ±15 P/P 0.001–0.005 {0.0030–0.0034} SEMI Prime, 2Flats, in Empak Cassettes of 3 & 5 wafers
151 n-type Si:P [111] 2″ 400 L/L 120–170 Lapped & edged
152 n-type Si:P [111] ±0.5° 2″ 10,000 P/E 40–49 Prime, NO Flats, Individual cst
153 n-type Si:P [111] ±0.5° 2″ 5,000 P/E >20 Prime, NO Flats, Individual cst
154 n-type Si:P [111] 2″ 5,000 P/E 15–20 SEMI Prime, 1Flat, Individual cst
155 n-type Si:P [111] 2″ 300 P/E 10–25 SEMI Prime, 2Flats, hard cst
156 n-type Si:P [111] ±0.5° 2″ 500 P/E 10–12 SEMI Prime, 2Flats, hard cst
157 n-type Si:P [111–3°] ±0.5° 2″ 600 P/E ~10 SEMI Prime, 1Flat, TTV<3μm, hard cst
158 n-type Si:P [111] ±0.5° 2″ 275 P/E 4–7 SEMI Prime, 2Flats, hard cst
159 n-type Si:P [111] ±0.5° 2″ 500 P/P 2.8–10.0 SEMI Prime, hard cst
160 n-type Si:P [111] 2″ 500 P/E 2.2–3.8 SEMI Prime, 2Flats, hard cst
161 n-type Si:P [111] ±0.5° 2″ 300 P/E 1–10 SEMI Prime, 2Flats, hard cst
162 n-type Si:P [111] ±0.5° 2″ 300 P/E 1–3 SEMI Prime, 2Flats, hard cst
163 n-type Si:P [111] ±0.5° 2″ 6,000 P/E 1–10 SEMI Prime, 1Flat, Individual cst
164 n-type Si:Sb [111] ±0.5° 2″ 300 P/E 0.05–0.09 SEMI Prime, 2Flats, hard cst
165 n-type Si:Sb [111–3.5°] ±0.5° 2″ 300 P/E 0.05–0.09 SEMI Prime, 2Flats, in hard cassettes of 5 & 8 wafers
166 n-type Si:Sb [111] 2″ 2,900 P/P 0.013–0.015 Prime, NO Flats, Individual cst
167 n-type Si:Sb [111–2.5°] ±0.5° 2″ 280 P/E 0.012–0.017 SEMI, 2Flats, hard cst
168 n-type Si:Sb [111] ±0.5° 2″ 280 P/P 0.011–0.020 SEMI, 2Flats, hard cst
169 n-type Si:As [111] ±0.5° 2″ 300 P/E 0.002–0.005 SEMI Prime, 2Flats, hard cst
170 p-type Si:B [100] 2″ 300 OxP/EOx 0.001–0.005 SEMI TEST, 2Flats, NOTE: Thermal Oxide 150nm thick on both sides, uniformity poorer than ±5%, hard cst
171 n-type Si:P [111] 2″ 300 P/E NTDFZ 7–8 SEMI Prime, 2Flats, hard cst
172 p-type Si:B [110] 2″ 300 P/E FZ 800–2,000 1 F @ <1,–1,0>
173 p-type Si:B [110] 2″ 350 P/P FZ 200–300 1 F @ <1,–1,0>
174 p-type Si:B [110] 2″ 380 P/P FZ 130–160 1 F @ <111> only
175 p-type Si:B [110] 2″ 280 P/E FZ 120–300 1 F @ <111> only
176 p-type Si:B [100] 2″ 300 P/P FZ 400–1,000 Prime, NO Flats, hard cst
177 p-type Si:B [100] 2″ 300 P/E FZ >50 SEMI Prime, 2Flats, hard cst
178 p-type Si:B [111] 2″ 300 P/E FZ 730–1,050 SEMI Prime, 1Flat, hard cst
179 p-type Si:B [111] 50mm 300 P/E FZ 500–900 SEMI Prime, 1Flat, hard cst
180 p-type Si:B [111] 2″ 300 P/P FZ >60 SEMI Prime, 2Flats, hard cst
181 p-type Si:B [111] 2″ 300 P/E FZ 36–100 SEMI Prime, 1Flat, hard cst
182 n-type Si:P [110] 2″ 250 P/E FZ ~50 PF<111> SF 134°
183 n-type Si:P [110] 2″ 900 P/E FZ 50–100 1 F @ <111> only
184 n-type Si:P [110] 2″ 280 P/E FZ 19–33 1 F @ <1,–1,0>
185 n-type Si:P [110] 2″ 280 P/P FZ 16–30 1 F @ <111> only
186 n-type Si:P [110] 2″ 1,000 P/P FZ 15–18 1 F @ <1,–1,0>
187 n-type Si:P [100] 2″ 300 P/P FZ 600–1,200 SEMI Prime, 2Flats, hard cst
188 n-type Si:P [100] 2″ 2,000 P/E FZ >600 SEMI Prime, 2Flats, Individual cst
189 n-type Si:P [100] 2″ 200 P/P FZ 500–1,500 SEMI Prime, 2Flats, hard cst
190 n-type Si:P [100] 2″ 300 P/E FZ >300 SEMI Prime, 2Flats, hard cst
191 n-type Si:P [100] 2″ 500 P/P FZ >200 SEMI Prime, 2Flats, hard cst
192 n-type Si:P [100] 2″ 150 P/P FZ 50–110 SEMI Prime, 2Flats, hard cst
193 n-type Si:P [100] 2″ 300 P/P FZ 50–110 SEMI Prime, 2Flats, hard cst
194 n-type Si:P [100] 2″ 280 P/P FZ 20–70 SEMI Prime, 2Flats, hard cst
195 n-type Si:P [100] 2″ 300 P/E FZ 10–40 SEMI Prime, 1Flat, hard cst
196 n-type Si:P [100] 2″ 300 P/P FZ 0.5–1.0 SEMI, 1Flat, hard cst; TWO flats at 90°
197 n-type Si:As [100] 2″ 7,000 P/E FZ 0.001–0.005 SEMI Prime, 2Flats, Individual cst
198 n-type Si:P [111] 2″ 275 P/E FZ 1,500–5,000 SEMI Prime, 2Flats, hard cst
199 n-type Si:P [111] 2″ 500 P/P FZ 650–1,000 SEMI Prime, 2Flats, hard cst
200 n-type Si:P [111] 50mm 1,000 P/E FZ >600 SEMI Prime, 1Flat, hard cst
201 n-type Si:P [111] 2″ 500 P/P FZ 500–3,000 SEMI Prime, 2Flats, hard cst
202 n-type Si:P [111] 2″ 280 P/P FZ 300–400 SEMI Prime, 1Flat, hard cst
203 n-type Si:P [111] 2″ 2,000 P/P FZ 168–250 Prime, NO Flats, Individual cst
204 n-type Si:P [111] 2″ 300 P/P FZ >150 SEMI Prime, 2Flats, hard cst
205 n-type Si:P [111] 2″ 500 P/P FZ 130–150 SEMI Prime, 2Flats, hard cst
206 n-type Si:P [111] 2″ 300 P/P FZ 125–210 SEMI Prime, 2Flats, hard cst
207 n-type Si:P [111] 2″ 380 P/E FZ 100–300 SEMI Prime, 2Flats, hard cst
208 n-type Si:P [111] 2″ 450 P/P FZ 100–230 Prime, NO Flats, hard cst
209 n-type Si:P [111] 2″ 300 P/P FZ 70–95 SEMI Prime, 2Flats, hard cst
210 n-type Si:P [111–1°] 2″ 300 P/E FZ 69–77 SEMI Prime, 1Flat, hard cst
211 n-type Si:P [111] 2″ 300 P/P FZ >60 SEMI Prime, 1Flat, hard cst
212 n-type Si:P [111] 2″ 300 P/E FZ 60–90 SEMI Prime, 2Flats, hard cst
213 n-type Si:P [111] 2″ 280 P/E/P FZ 40–50 SEMI Prime, 2Flats, hard cst
214 n-type Si:P [111] 2″ 300 P/P FZ 15–30 SEMI Prime, 2Flats, hard cst
215 n-type Si:P [111] 2″ 500 P/P FZ 10–55 SEMI Prime, 2Flats, hard cst
216 n-type Si:P [111] ±0.5° 2″ 300 P/E FZ NTD 7–8 SEMI, 2Flats, hard cst
217 p-type Si:B [110] 2″ 2,000 P/P 1–10 1 F @ <1,–1,0>
218 p-type Si:B [100] 2″ 500 P/P 1,300–2,600 SEMI Prime, 2Flats, hard cst
219 p-type Si:B [100] 2″ 300 P/P ~150 SEMI Prime, 1Flat, hard cst
220 p-type Si:B [100] 2″ 300 P/P 90–120 SEMI Prime, 2Flats, hard cst
221 p-type Si:B [100] 2″ 300 P/P 70–80 SEMI Prime, 1Flat, hard cst
222 p-type Si:B [100] 2″ 300 P/P 6–7 Prime, NO Flats, hard cst
223 p-type Si:B [100] 2″ 1,400 P/P 6–8 Prime, NO Flats, hard cst
224 p-type Si:B [100] 2″ 1,500 P/P 6–8 Prime, NO Flats, hard cst
225 p-type Si:B [100] 2″ 3,000 P/E 6–8 Prime, NO Flats, Individual cst
226 p-type Si:B [100] 2″ 3,000 P/E 4.9–5.3 Prime, NO Flats, Individual cst
227 p-type Si:B [100] 2″ 300 P/E 1–10 SEMI Prime, 2Flats, hard cst
228 p-type Si:Ga [100] 2″ 350 P/P 1–5 SEMI Prime, 2Flats, hard cst
229 p-type Si:B [100] 2″ 500 P/E 1–2 SEMI Prime, 2Flats, hard cst
230 p-type Si:B [100] 2″ 1,000 P/P 1–10 SEMI Prime, 1Flat, hard cst
231 p-type Si:B [100] 2″ 2,000 P/P 1–10 SEMI Prime, 2Flats, Individual cst
232 p-type Si:B [100] 2″ 2,000 P/E 1–10 SEMI Prime, 1Flat, Individual cst
233 p-type Si:B [100] 2″ 2,800 P/E 1–10 SEMI Prime, 2Flats, Individual cst
234 p-type Si:B [100] 2″ 3,000 P/E 1–10 SEMI Prime, 1Flat, Individual cst
235 p-type Si:B [100] 2″ 280 P/E 0.5–0.6 Prime, NO Flats, hard cst
236 p-type Si:B [100] 2″ 280 P/E 0.08–0.10 SEMI Prime, 1Flat, hard cst
237 p-type Si:B [100] 2″ 1,000 P/E 0.073–0.090 SEMI Prime, 2Flats, hard cst
238 p-type Si:B [100] 2″ 250 P/P 0.02–0.04 SEMI Prime, 1Flat, hard cst
239 p-type Si:B [100] 2″ 300 P/E 0.016–0.017 Prime, NO Flats, hard cst
240 p-type Si:B [100] 2″ 1,000 P/P 0.015–0.045 SEMI Prime, 2Flats, hard cst
241 p-type Si:B [100] 2″ 280 P/P 0.008–0.095 SEMI Prime, 1Flat, hard cst
242 p-type Si:B [100–4°] 2″ 300 P/P 0.003–0.004 SEMI Prime, 2Flats, hard cst
243 p-type Si:B [100–6° towards[110]] 2″ 300 P/E 0.0026–0.0029 SEMI Prime, 1Flat, hard cst
244 p-type Si:B [100] 2″ 300 P/E 0.0023–0.0029 SEMI Prime, 1Flat, hard cst
245 p-type Si:B [100] 2″ 250 P/P 0.001–0.006 SEMI Prime, 2Flats, hard cst
246 p-type Si:B [100–6° towards[110]] 2″ 275 P/E 0.001–0.005 SEMI Prime, 2Flats, hard cst
247 p-type Si:B [100] 2″ 280 P/E 0.001–0.005 SEMI Prime, 2Flats, hard cst
248 p-type Si:B [100] 2″ 300 P/E 0.001–0.005 Prime, NO Flats, hard cst
249 p-type Si:B [100] 2″ 500 P/P 0.001–0.005 SEMI Prime, 2Flats, hard cst
250 p-type Si:B [111–10° towards[112]] 2″ 300 P/E 20–25 SEMI Prime, 1Flat, hard cst
251 p-type Si:B [111] 2″ 380 P/P 10–20 SEMI Prime, 1Flat, hard cst
252 p-type Si:B [111–2° towards[112]] 2″ 1,000 P/P 10–30 SEMI Prime, 1Flat, hard cst
253 p-type Si:B [111] 2″ 300 P/P 7–10 SEMI Prime, 1Flat, hard cst
254 p-type Si:B [111] 2″ 500 P/P 2.4–2.6 SEMI Prime, 1Flat, hard cst
255 p-type Si:B [111] 2″ 300 P/P 2–3 SEMI Prime, 1Flat, hard cst
256 p-type Si:B [111] 2″ 500 P/E 2–3 SEMI Prime, 1Flat, hard cst
257 p-type Si:B [111] 2″ 280 P/E/P 1–20 SEMI Prime, 1Flat, hard cst
258 p-type Si:B [111–1.5°] 2″ 400 P/E 1–10 SEMI Prime, 1Flat, hard cst
259 p-type Si:B [111] 2″ 500 P/E 1–10 SEMI Prime, 2Flats, hard cst
260 p-type Si:B [111–10° towards[112]] 2″ 280 P/E 0.5–0.6 SEMI Prime, 1Flat, hard cst
261 p-type Si:B [111–3°] 2″ 300 P/P 0.016–0.018 SEMI Prime, 1Flat, hard cst
262 p-type Si:B [111–3.5°] 2″ 280 P/P 0.01–0.02 SEMI Prime, 1Flat, hard cst
263 p-type Si:B [111] 2″ 600 P/E 0.01–0.05 SEMI Prime, 1Flat, hard cst
264 p-type Si:B [111–6° towards[110]] 2″ 275 P/E 0.001–0.005 SEMI Prime, 1Flat, hard cst
265 p-type Si:B [111] 2″ 280 P/E 0.001–0.005 SEMI Prime, 1Flat, hard cst
266 n-type Si:P [110] 2″ 1,000 P/P ~4 NO Flats
267 n-type Si:P [110] 2″ 950 P/P 2.5–3.5 1 F @ <1,–1,0>
268 n-type Si:P [110] 2″ 450 P/P ~0.6 1 F @ <001>
269 n-type Si:P [100] 2″ 400 P/P 210–880 SEMI Prime, 2Flats, hard cst
270 n-type Si:P [100] 2″ 300 P/E >50 SEMI Prime, 2Flats, hard cst
271 n-type Si:P [100] 2″ 5,000 P/E 42–53 SEMI Prime, 2Flats, Individual cst
272 n-type Si:P [100] 2″ 2,300 P/E/P 30–40 Prime, NO Flats, Individual cst
273 n-type Si:P [100] 2″ 5,000 P/E 30–70 Prime, NO Flats, Individual cst
274 n-type Si:P [100] 2″ 300 P/P 25–42 SEMI Prime, 1Flat, hard cst
275 n-type Si:P [100] 2″ 425 P/E/P 20–40 Prime, NO Flats, hard cst
276 n-type Si:P [100] 2″ 300 P/P 12–24 SEMI Prime, 2Flats, hard cst
277 n-type Si:P [100] 2″ 5,000 P/E 10–30 SEMI Prime, 2Flats, Individual cst
278 n-type Si:P [100] 2″ 5,000 P/E 3.4–3.7 SEMI Prime, 2Flats, Individual cst
279 n-type Si:P [100] 2″ 40 ±10 P/P 1–3 SEMI Prime, 1Flat, TTV<5μm, in single wafer trays between clean–room sheets, MOQ 5 wafers
280 Si:P [100–6°] 2″ 300 P/E 1–5 SEMI Prime, 2Flats, hard cst
281 n-type Si:P [100] 2″ 1,000 P/P 1–10 SEMI Prime, 1Flat, hard cst
282 n-type Si:Sb [100] 2″ 280 P/E 0.01–0.02 SEMI Prime, 2Flats, hard cst
283 n-type Si:Sb [100] 2″ 1,000 P/E 0.005–0.020 SEMI Prime, 2Flats, hard cst
284 n-type Si:As [100] 2″ 300 P/P 0.001–0.005 SEMI Prime, 2Flats, hard cst
285 n-type Si:As [100] 2″ 500 P/E 0.001–0.005 SEMI Prime, 1Flat, hard cst
286 n-type Si:P [111] 2″ 5,000 P/E 50–80 Prime, NO Flats, Individual cst
287 n-type Si:P [111] 2″ 10,000 P/E 46–52 SEMI Prime, 2Flats, Individual cst
288 n-type Si:P [111] 2″ 10,000 P/E 46–52 SEMI Prime, 2Flats, Individual cst
289 n-type Si:P [111] 2″ 10,000 P/E 40–52 SEMI Prime, 1Flat, Individual cst
290 n-type Si:P [111] 2″ 5,000 P/E 35–50 SEMI Prime, 2Flats, Individual cst
291 n-type Si:P [111] 2″ 250 P/E 25–35 Prime, NO Flats, hard cst
292 n-type Si:P [111] 2″ 300 P/P 23–33 SEMI Prime, 1Flat, hard cst
293 n-type Si:P [111] 2″ 700 P/E 22–28 SEMI Prime, 2Flats, hard cst
294 n-type Si:P [111] 2″ 5,000 P/P 20–40 SEMI Prime, 1Flat, Individual cst
295 n-type Si:P [111] 2″ 10,000 P/E >20 SEMI Prime, 1Flat, Individual cst
296 n-type Si:P [111] 2″ 6,000 P/E 11–14 SEMI Prime, 1Flat, Individual cst
297 n-type Si:P [111] 2″ 300 P/E 10–25 SEMI Prime, 2Flats, hard cst
298 n-type Si:P [111–5°] 2″ 600 P/E ~10 SEMI Prime, 2Flats, hard cst
299 n-type Si:P [111] 2″ 450 P/P 6–10 SEMI Prime, 2Flats, hard cst
300 n-type Si:P [111] 2″ 500 P/E 5.5–6.9 Prime, NO Flats, hard cst
301 n-type Si:P [111–4° towards[112]] 2″ 500 P/E 5–10 SEMI Prime, 2Flats, hard cst
302 n-type Si:P [111] 2″ 330 P/E 3–7 SEMI Prime, 1Flat, hard cst
303 n-type Si:P [111] 2″ 275 P/P 2.5–3.5 SEMI Prime, 1Flat, hard cst
304 n-type Si:P [111] 2″ 5,000 P/E 2.0–3.1 Prime, NO Flats, Individual cst
305 n-type Si:P [111] 2″ 5,000 P/E 2–3 Prime, NO Flats, Individual cst
306 n-type Si:P [111] 2″ 275 P/P 1.5–1.7 SEMI Prime, 2Flats, hard cst
307 n-type Si:P [111–8°] 2″ 280 P/E 1.3–1.8 SEMI Prime, 2Flats, hard cst
308 n-type Si:P [111–3.5°] 2″ 280 P/E 1–30 SEMI Prime, 2Flats, hard cst
309 n-type Si:P [111] 2″ 500 P/E 1–10 SEMI Prime, 2Flats, hard cst
310 n-type Si:P [111–2.5°] 2″ 500 C/C 1–20 SEMI Prime, 1Flat, hard cst
311 n-type Si:P [111] 2″ 7,500 P/E 1–10 SEMI Prime, 2Flats, Individual cst
312 n-type Si:Sb [111–1° towards[112]] 2″ 500 P/E 0.017–0.026 SEMI Prime, 2Flats, hard cst
313 n-type Si:Sb [111–2°] 2″ 200 P/E ~0.01 SEMI Prime, 2Flats, hard cst
314 n-type Si:Sb [111] 2″ 280 P/E 0.01–0.02 SEMI Prime, 2Flats, hard cst
315 n-type Si:Sb [111–2°] 2″ 280 P/E 0.008–0.020 SEMI Prime, 2Flats, hard cst
316 n-type Si:As [111] 2″ 300 P/E 0.0030–0.0034 SEMI Prime, 2Flats, hard cst
317 n-type Si:As [111] 2″ 300 P/E 0.001–0.005 SEMI Prime, 2Flats, hard cst
318 n-type Si:As [111–4°] 2″ 350 P/E 0.001–0.005 SEMI Prime, 2Flats, hard cst

 

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