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Silicon carbide Paddle

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Description

Silicon carbide Paddle

Applications 

Solar, semiconductor, diode; diffusion process

Basic requirements

Excellent process stability, stable material properties,High temperature impact, good purity, high temperature bearing capacity, Long-term use is not easy bending deformation, long life.

Kind of form

Full size, suitable for major world diffusion furnace equipment, the use  of the diffusion process, Such as:Centrotherm、Tempress、Samco、Customizable

SiC refers to silicon carbide. Silicon carbide (SiC) is made of quartz sand, coke and other raw materials through the high temperature furnace melting. The current industrial production of silicon carbide has two kinds, black silicon carbide and green silicon carbide. Both are hexagonal crystal, the specific gravity of 3.21g / cm3, micro hardness of 2840 ~ 3320kg / mm2.

At least 70 kinds of crystalline silicon carbide, due to its low gravity 3.21g/cm3 and high temperature strength, it is suitable for bearings or high temperature furnace raw materials.  at any pressure can not be reached, and have a considerable low chemical activity.

At the same time, many people have tried to replace silicon with silicon carbide due to their high thermal conductivity, high crush electric field strength and high maximum current density. Recently, in the application of semiconductor high power components. In fact, the silicon carbide substrate in thermal conductivity, more than 10 times higher than the sapphire substrate, so the use of silicon carbide substrate LED components, with good conductivity and thermal conductivity, relatively conducive to the production of high-power LED

Material Comparison Chart:

Nature density(g/㎝3  ) density(g/㎝3  ) (10-6   / ℃) (Kgf/㎜2  ) (J/㎏*°K) (GPa) (MPa) (MPa) (MPa) (MPa*m0.5     ) (Poisson’s ratio) (℃)
Al2-O3 3.9 3.9 8 1600 880 370 262 2600 380 3.6 0.26 2053
ZrO2 6 6 10.1 1400 400 200 700 1850 690 9.5 0.23 2700
SiC 3.2 3.2 4 2300 700 410 400 3900 550 4.6 0.19 2700
Si3 N4 3.3 3.3 2.3 1500 700 310 524 2500 780 7.7 0.24 1900
Cellon  Sialon 3.2 3.2 3 1600 620 300 450 3500 600 6.5 0.23 1900
WC 15 15 6 1600 390 700 896 6100 550 25 0.18 2870
Glass 2.5 2.5 0.5 1000 740 70 1100 69 1 0.2 2200
BN 2 2 2 220 1850 62 41 143 73 0.13 2600
AlN 3.2 3.2 4.4 1200 730 340 400 2070 350 2.6 0.25 2400
B4 C 2.5 2.5 5.6 3200 930 450 350 2800 400 3 0.15 2450
Steel 7.8 7.8 13.6 126 448 200 520 14 0.3 1450

Relatively high thermal conductivity of the substrate table:

Substrate material FR4 MCPCB LTCC Al2-O3 SiC AlN
(W/m*°K) 0.7~1.2 2~6 8~15 20~28 120~140 140~180
Insulativity(Ω×㎝) 1014 108 1013 1015 108 1011
(0.25cm2  )  (W) <0.2 0.5~1 1~1.5 2~3 3~15 15~20
Board size To large-scale To large-scale No more 6″×6″ No more 6″×6″ No more 6″×6″ No more 6″×6

The items are subject to prior sale without notice. These items are only for end users.

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