Description
GaP Wafers
Note: Surface – P = Polished, E = Etched, C = AsCut, Ox = Oxide (on that layer)
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| Item | Material | Orient. | Diam | Thck | Surf. | Resistivity | Nc | Mobil | EPD | Comment |
| (mm) | (μm) | Ωcm | a/cm3 | cm2/Vs | /cm2 | |||||
| 1 | undoped GaP:- | [100] | 2″ | 400 | P/E | n-type 100 | 4.40E+14 | 140 | <5.4E4 | EJ Flats; Epi Ready |
| 2 | n-type GaP:S | [100] | 2″ | 400 | P/E | 0.24 | 2.30E+17 | 110 | <7.1E4 | SEMI Flats; Epi Ready |
| 3 | n-type GaP:S | [111A] | 2″ | 315 | P/E | 4.30E-02 | 1.60E+18 | 90 | <1.3E5 | SEMI Flats; Epi Ready |
| 4 | p-type GaP:Zn | [100] | 2″ | 400 | P/E | 0.37 | (2-5)E17 | 67 | <5.7E4 | EJ Flats; Epi Ready |
| 5 | p-type GaP:Zn | [100] | 2″ | 400 | P/E | 0.37 | 2.50E+17 | 67 | <5.7E4 | EJ Flats; Epi Ready |
| 6 | p-type GaP:Zn | [111A] ±0.1° | 2″ | 350 | P/E | 0.046 | 2.70E+18 | 50 | <9.5E4 | SEMI Flats, Primary @(110), Secondary @(112); Epi Ready |
| 7 | undoped GaP:- | [100] | 2″ | 450 | P/E | n-type 17 | 3.17E+10 | 91 | <5E4 | SEMI Flats; Epi Ready |
| 8 | undoped GaP:- | [100-10° towards[110]] | 2″ | 400 | P/E | n-type 1.3 | 4.00E+16 | 120 | <2E4 | Epi Ready |
| 9 | undoped GaP:- | [100] | 2″ | 500 | P/E | n-type 1.05 | 4.50E+16 | 130 | <7.3E4 | SEMI Flats; Epi Ready |
| 10 | undoped GaP:- | [110] | 2″ | 300 | P/P | n-type 15 | 3.10E+15 | 136 | <5E4 | SEMI Flats; Epi Ready |
| 11 | undoped GaP:- | [110] | 2″ | 400 | P/P | n-type 1.3 | 4.20E+16 | 116 | <2.6E4 | Epi Ready |
| 12 | undoped GaP:- | [111] | 2″ | 2,000 | P/P | 8.90E+09 | 5.30E+06 | 130 | <5.1E4 | SEMI Flats (Primary @ 110, Secondary @ 112); Epi Ready |
| 13 | n-type GaP:S | [100] | 2″ | 350 ±10 | P/E | 0.16 | 3.80E+17 | 100 | <2E5 | SEMI Flats; Epi Ready |
| 14 | n-type GaP:S | [100] | 2″ | 400 | P/E | 0.054 | 1.20E+18 | 90 | <1E5 | EJ Flats; Epi Ready |
| 15 | n-type GaP:S | [100] | 2″ | 400 | P/E | 0.053 | 1.20E+18 | 98 | <6.6E4 | EJ Flats; Epi Ready; small nick on secondary flat |
| 16 | n-type GaP:S | [100-10° towards[011]] | 2″ | 350 ±10 | P/E | 0.051 | 1.40E+18 | 88 | <6.6E4 | SEMI Flats; Epi Ready |
| 17 | n-type GaP:S | [111B] | 2″ | 275 | P/E | 0.136 | 4.37E+17 | 105 | <5E4 | Epi Ready |
| 18 | n-type GaP:S | [111A] | 2″ | 315 | P/E | 4.30E-02 | 1.60E+18 | 90 | <1.3E5 | SEMI Flats; some visible white spots |
| 19 | n-type GaP:S | [111A] | 2″ | 315 | P/E | 4.30E-02 | 1.60E+18 | 90 | <1.3E5 | SEMI Flats; Epi Ready |
| 20 | n-type GaP:S | [111A] | 2″ | 350 | P/E | 4.30E-02 | 1.60E+18 | 90 | <1.3E5 | SEMI Flats; Epi Ready |
| 21 | p-type GaP:Zn | [100-2° towards[111]] | 2″ | 400 | P/E | 0.078 | 1.20E+18 | 65 | <3E4 | SEMI Flats; Epi Ready |
| 22 | p-type GaP:Zn | [100-2° towards[110]] | 2″ | 400 | P/E | 4.40E-02 | 3.10E+18 | 50 | <2.5E4 | SEMI Flats; Epi Ready |
| 23 | p-type GaP:Zn | [111B] | 2″ | 400 | P/E | 0.355 | 2.70E+17 | 65 | <5E4 | SEMI Flats; Epi Ready |
| 24 | p-type GaP:Zn | [311] | 2″ | 350 ±10 | P/E | 0.11 | 8.70E+17 | 68 | <2.5E4 | SEMI Flats (secondary @ 90° counter clockwise) Epi Ready |
