Description
Please contact us for the availability of the following used Liquid Phase Epitaxy Reactor Growth System (LPE SYSTEM) semiconductor equipment
Info from OEM for your reference only.
The Liquid Phase Epitaxy (LPE) Reactor system provides the user with a process controlled furnace for automated user specified segment driven process recipes that provide optimum control over wafer processing and repetitive results from run to run. The overall system is designed to give the user reliability and repeatability for growing liquid phase epitaxial layers.
The LPE system is capable of processing a wafer over a uniform flat temperature zone. All system components are located on the side, top, or front of the furnace and either a left or right side glovebox.
An automatic, cantilevered, non-contact wafer loading system is incorporated for loading and unloading of the graphite process boat. The loading system consists of a quartz boat holder that is cantilevered from the automatic end cap assembly. The end cap assembly locates the process boat within the quartz condensation sleeve inside the quartz process tube. The translation speed of the loading system is adjustable from 50-300 mm/min. Door interlocks are provided to prevent startup of a process run in the event of an incomplete door closure.
The OEM also offers a vertical dipping system for LPE growth of thicker films at higher rates, e.g. HgCdTe (MCT). It operates at pressures up to 200 PSIG and temperatures to 600 °C. The system has a load lock which can be evacuated to 10-6 Torr and pressurized to 200 PSIG.
The item is only for end user. The item is subject to prior sale without notice.
SS5965
