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Ionfab 300 Plus

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SOLD

Tool ID:OEM-Model-4

Location: USA

Tool Name & Model: Oxford instruments Ionfab 300 Plus Ion Beam etching & deposition system

Maker: Oxford Instruments Plasma Technology

Valid Time: Subject to prior sale without notice. Appreciate your time.

Info on the system from the owner:

  • 1994 Oxford Ionfab 300 Plus Ion Beam etching/deposition system
  • THE TOOL HAD 4 MFCs, only used ARGON to mill metal layers on SILICON wafers
  • HAS 3cm gun,we did’nt sputter
  • It holds 4, 4″ targets,
  • HAS 15cm Gun for etching
  • 200 mm tooling
  • The motor controllers were upgraded
  • Comes With manual
  • only used the IONmilling portion of the tool
  • The tool was fully functional when replaced for a newer tool.

And

  • OXFORD Ionfab 300 Plus Ion beam etch and deposition system, 4-8″
  • Typical applications and materials:
    IR detectors
    CdHgTe (CMT) etch
    VOx deposition and etch
    Metal contact and track etch
    Cu, Ni, Al…
    Noble metals: Au, Pt, Pd…
    Diffraction gratings
    SiO2 ‘blazed’ etch
    Spintronics and MRAM
    AR and HR coatings for laser bars
    Telecom filters
    III-V photonics etching
    Thin film magnetic hard disk heads (TFMH)
  • CE marked
    Cassette to cassette
    Single wafer possibility
    (2) Ion sources: can be used for etching / deposition
    Cryopump
  • Functionality in multiple modes:
    Ion Beam Etching (IBE)
    Reactive Ion Beam Etching (RIBE)
    Reactive Ion Beam Deposition (RIBD)
    Chemically Assisted Ion Beam Etching (CAIBE)
    Ion Beam Sputter Deposition (IBSD)
    Ion Assisted Sputter Deposition (IASD)
  • Flexibility:
    Ability to clamp any shape, and design unique carrier plates
    Wafer handling options
    Manual loading for one-off trials
    Load-lock for faster trials
    Cassette-to-cassette loading/unloading for batch production
    Clusterable with other process tools including Oxford Instruments’ PlasmaPro plasma etch, deposition and sputtering tools, and FlexAL atomic layer deposition (ALD) tool
    Simple upgrade options to add etch and deposition sources
  • Ion source:
    Leading ion source and grid set technology
    Grids are designed to suit specific applications: high uniformity, high rate, & low energy
    Specific deposition grid sets to suit multiple targets
    Full range of etch source options up to 35cm
    Dual beam configurations (etch plus deposition source) offer the possibility to add capping layer immediately after etch, without exposing the process chamber or wafer to atmosphere
    Increased deposition rates by using etch source as a plasma radical source (IASD)
  • Flexibility in a single tool:
    Tiltable substrate holder can be angled from -90° up to 75° (depending upon configuration)
    Enables ‘blazed’ gratings
    Allows sidewalls to be cleaned off or etched
    Angle control of substrate relative to deposition target
  • Platen rotation speed:
    Variable platen rotation speed enables deposition rate to be controlled specifically for the application
    Standard and high speed platen options
  • Substrate cooling:
    Prevents degradation of substrate and devices structures/other materials already in place
    Option for wafer backside cooling with He (turbo-pump) or Ar (cryo-pump)
  • Process monitoring:
    Etch endpoint monitoring by SIMS for multi-material applications
    Deposition process monitoring
    Crystal monitor (single or dual head)
    White Light Optical Monitor (WLOM)
    Chamber gas identification, partial pressure control and leak checking via RGA

The tool may be subject to the export control laws of the United States and other countries. Buyer will comply with the restrictions of the laws and might need to sign the “Customer Statement” before PO. The trademarks of the equipment and parts contained in these documents belonged to the Original Equipment Manufacturers.

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The trademarks of the equipment and parts contained in this website belonged to the Original Equipment Manufacturers